2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation dV DS /dt dV/dt PD Operating and Storage Temperature range Tch Tstg EAR Equivalent circuit schematic Ratings 150 150 92 368 30 92 1205.7 41 Unit V V A A V A mJ mJ Remarks VGS=-30V Gate(G) Note *1 Note *2 Note *3 20 5 210 3.13 +150 -55 to +150 Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *1:Tch< = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=37A,L=1.29mH, VCC=48V,RG=50 kV/s VDS= < 150V kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Turn-Off Time toff Drain(D) EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. Note *4:IF< = -ID, -di/dt=50A/s,VCC< = BVDSS,Tch< = 150C Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS =150V VGS=0V Tch=125C VDS =120V VGS=0V VGS=30V VDS=0V ID=46A VGS=10V ID=46A VDS=25V VDS =75V VGS=0V f=1MH VCC=48V ID=46A VGS=10V Min. Typ. 150 3.0 12 RGS=10 V CC =75V ID=92A VGS=10V IF=92A VGS=0V Tch=25C IF=92A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 250 100 26 21 24 3800 5400 530 795 35 52.5 40 60 112 168 56 84 30 45 80 120 30 45 25 38 1.20 1.50 250 2.0 Units V V A nA m S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.595 40.0 Units C/W C/W 1 2SK3789-01R FUJI POWER MOSFET Characteristics 300 Allowable Power Dissipation PD=f(Tc) 140 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 120 20V 10V 8V 100 PD [W] ID [A] 200 80 60 7V 100 40 6.5V 20 0 VGS=6.0V 0 0 25 50 75 100 125 150 0 5 Tc [C] 100 10 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 0.15 0.15 7V 6.5V 0.10 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=36.5A,VGS=10V 0.10 RDS(on) [ ] RDS(on) [ ] VGS=6V 100 ID [A] 0.05 max. 0.05 typ. 8V 10V 20V 0.00 0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3789-01R 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A Typical Gate Charge Characteristics VGS=f(Qg):ID=92A,Tch=25C 14 6.5 12 6.0 Vcc= 30V 5.5 75V max. 10 120V 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 40 50 Tch [C] 10 4 60 70 80 90 100 110 120 130 140 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 1000 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 3 100 10 IF [A] C [pF] Coss 2 10 Crss 10 1 10 0 1 10 -1 10 0 10 1 2 10 10 0.1 0.00 3 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 1400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=92A IAS=37A 1200 tr 1000 10 2 td(off) 10 EAV [mJ] t [ns] td(on) tf IAS=56A 800 600 IAS=92A 1 400 200 10 0 10 0 0 10 1 10 2 10 3 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3789-01R 2 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V Avalanche Current I AV [A] Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4