DS30204 Rev. 9 - 2 1 of 3 BSS84DW
www.diodes.com ã Diodes Incorporated
BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Available in Lead Free/RoHS Compliant Version (Note 3)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage (Note 1) VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 2) Continuous ID-130 mA
Total Power Dissipation (Note 2) Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-363
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
·Terminal Connections: See Diagram
·Marking Code (See Page 2): K84
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approx.)
Mechanical Data
A
M
JL
D
BC
H
K
G
F
D2
S2G2D1
G1S1
S1
D1
D2
S2
G1
G2
Note: 1. RGS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a0° 8°
All Dimensions in mm
SPICE MODEL: BSS84DW
DS30204 Rev. 9 - 2 2 of 3 BSS84DW
www.diodes.com
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BVDSS -50 -75 ¾VVGS = 0V, ID = -250mA
Zero Gate Voltage Drain Current IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ= 25°C
VDS = -50V, VGS = 0V, TJ= 125°C
VDS = -25V, VGS = 0V, TJ= 25°C
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(th) -0.8 -1.6 -2.0 V VDS =V
GS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ¾610WVGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ¾¾SVDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾45 pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾10 ¾ns VDD = -30V, ID = -0.27A,
RGEN = 50W,V
GS = -10V
Turn-Off Delay Time tD(OFF) ¾18 ¾ns
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ordering Information (Note 5)
Device Packaging Shipping
BSS84DW-7 SOT-363 3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS84DW-7-F.
Marking Information
K84 YM
K84 YM
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
DS30204 Rev. 9 - 2 3 of 3 BSS84DW
www.diodes.com
0
-
600
-500
-400
-300
-200
-100
0-2
-1 -5
-4
-3
I , DRAIN SOURCE CURRENT (mA)
D
V , DRAIN SOURCE (V)
DS
Fig. 2, Drain Source Current vs.
Drain Source Volta
g
e
T = 25°C
A
V= -5V
GS
-4.5V
-3.5V
-3.0V
-2.5V
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
D
Fi
g
. 6, On-Resistance vs. Drain Current
15.0
20.0
2
5.
0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
0
3
6
9
12
1
5
-50 -25 025 50 125
100
75 150
T,JUNCTION TEMPERATURE (°C)
J
Fi
g
. 5, On-Resistance vs. Junction Temperature
V=-10V
GS
I = -0.13A
D
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE TO SOURCE (V)
GS
Fi
g
. 4, On Resistance vs. Gate Source Volta
g
e
T= 25°C
A
T = 125°C
A
-0.0
-
1
.
0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4
-1 -8
-7
-6
-5
I , DRAIN CURRENT (A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Fi
g
. 3, Drain Current vs. Gate Source Volta
g
e
T= -55°C
A
T = 25°C
A
T = 125°C
A
