NDT3055LJ23Z - Fairchild Semiconductor

August 1998

NDT3055L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter NDT3055L Units

VDSS Drain-Source Voltage 60 V

VGSS Gate-Source Voltage - Continuous ±20 V

IDMaximum Drain Current - Continuous (Note 1a) 4A

- Pulsed 25

PDMaximum Power Dissipation (Note 1a)3W

(Note 1b) 1.3

(Note 1c)1.1

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

* Order option J23Z for cropped center drain lead.

NDT3055L Rev.A1

4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V,

RDS(ON) = 0.120 Ω @ VGS = 4.5 V.

Low drive requirements allowing operation directly from logic

drivers. VGS(TH) < 2V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

SOIC-16

SuperSOTTM-3 SuperSOTTM-8 SO-8 SOT-223

SuperSOTTM-6

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance and provide superior

switching performance, and withstand high energy pulse

in the avalanche and commutation modes. These devices

are particularly suited for low voltage applications such as

DC motor control and DC/DC conversion where fast

switching, low in-line power loss, and resistance to

transients are needed.

D

DS

G

D

S

G

D

S

D

SOT-223 G

D

S

SOT-223*

(J23Z)

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C55 mV/o C

IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1µA

TJ =125°C 50 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.6 2V

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC-4 mV /oC

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A0.07 0.1 Ω

TJ =125°C 0.125 0.18

VGS = 4.5 V, ID = 3.7 A0.103 0.12

ID(ON) On-State Drain Current VGS = 5 , VDS = 10 V 10 A

gFS Forward Transconductance VDS = 5 V, ID = 4 A 7S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 25, VGS = 0 V,

f = 1.0 MHz 345 pF

Coss Output Capacitance 110 pF

Crss Reverse Transfer Capacitance 30 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = 25, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω5 20 ns

trTurn - On Rise Time 7.5 20 ns

tD(off) Turn - Off Delay Time 20 50 ns

tfTurn - Off Fall Time 7 20 ns

QgTotal Gate Charge VDS = 40 V, ID = 4 A,

VGS = 10 V 13 20 nC

Qgs Gate-Source Charge 1.7 nC

Qgd Gate-Drain Charge 3.2 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 2.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2)0.8 1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

NDT3055L Rev.A1

a. 42oC/W when mounted on a 1 in2 pad of

2oz Cu. b. 95oC/W when mounted on a 0.066 in2

pad of 2oz Cu. c. 110oC/W when mounted on a 0.00123

in2 pad of 2oz Cu.

NDT3055L Rev.A1

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to- Source Voltage.

012345

0

5

10

15

20

25

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V =10V

GS

3.5V

5.0V

4.5V

4.0V

DS

D

6.0V

3.0V

0 5 10 15 20 25

0.8

1

1.2

1.4

1.6

1.8

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 4.0V

GS

10V

4.5V

D

6.0V

8.0V

5.0V

R , NORMALIZED

DS(ON)

Figure 6. Body Diode Forward Voltage

Variation with Current and

Temperature.

246810

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(ON)

25°C

I = 2A

D

T = 125°C

A

11.5 22.5 33.5 44.5 5

0

2

4

6

8

10

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 5V

DS

GS

D

T = -55°C

J125°C

25°C

00.2 0.4 0.6 0.8 11.2 1.4

0.0001

0.001

0.01

0.1

1

10

30

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

A

25°C

-55°C

V = 0V

GS

SD

S

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 10 V

GS

I = 4.0 A

D

R , NORMALIZED

DS(ON)

NDT3055L Rev.A1

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics (continued)

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1 2

R (t) = r(t) * R

R = 110 °C/W

T - T = P * R (t)

A

J

P(pk)

t

1 t

2

θJA

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.

Transient thermal response will change depending on the circuit board design.

0.1 0.3 1 4 10 30 60

10

20

50

100

200

500

1000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

0246810 12 14

0

2

4

6

8

10

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 4A

DV = 10V

DS 30V

40V

0.1 0.2 0.5 1 2 5 10 30 60 100

0.01

0.03

0.1

0.3

1

3

10

50

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D

1s

100ms

10s

10ms

RDS(ON) LIMIT

1ms

DC

V = 10V

SINGLE PULSE

R = 110 C/W

T = 25°C

GS

A

θJA o

100us

0.001 0.01 0.1 110 100 300

0

20

40

60

80

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =110°C/W

T = 25°C

θJA

A

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

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not intended to be an exhaustive list of all such trademarks.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

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