BSS84V
Document number: DS30605 Rev. 8 - 2
1 of 3
www.diodes.com
October 2007
© Diodes Incorporated
BSS84
V
NEW PRODUCT
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563
S
1
D
1
D
2
S
2
G
1
G
2
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage (Note 1) VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 2) Continuous ID-130 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 2) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 2) RθJA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -50 -75 ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯ ±50 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ⎯ 2 10 Ω VGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 45 pF
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns
Turn-Off Delay Time tD(OFF) ⎯ 18 ⎯ ns
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Notes: 1. RGS ≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
BSS84
V
0
25
50
25 50 75 100 125 150 175
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
75
100
125
150
200
0
250
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
-0.2
-0.4
-0.6
-0.8
-1.2
-1.0
-1.4
0 -0.5 -1 -1.5 -2.5
-2 -3 -3.5 -4 -4.5 -5
-0.001
-0.01
-0.1
-1
0-1 -2-3-4
I, D
NEW PRODUCT
-5
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical Transfer Characteristics
GS
V= -10V
DS
0
0.5
1.0
1.5
2.0
2.5
3.0
-0.001 -0.1
-0.01 -1
I , DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
2
1
5
4
3
6
7
8
0-8-6
-4
-2 -10
V , GATE-SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
GS
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
-0.1
-0.01
-0.001
-1
0-0.5 -1.0 -1.5
I,
R
EVE
R
SE
D
R
AI
N
C
U
R
R
E
N
T
(A)
DR
V , BODY DIODE FORWARD VOLTAGE (V)
Fig. 6 Reverse Drain Current vs.
Body Diode Forward Voltage
SD
BSS84V
Document number: DS30605 Rev. 8 - 2
2 of 3
www.diodes.com
October 2007
© Diodes Incorporated
BSS84
V
Ordering Information (Note 6)
Part Number Case Packaging
BSS84V-7 SOT-563 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 7)
NEW PRODUCT
K84 YM
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Notes: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
BSS84V
Document number: DS30605 Rev. 8 - 2
3 of 3
www.diodes.com
October 2007
© Diodes Incorporated
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
A
M
L
BC
H
K
G
D
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
X
Z
Y
C
EE
G
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C 1.7
E 0.5
