To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old company name remains in t his document, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electr onics Corporat ion (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume an y liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liabil ity whatso ever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified acco rding to the following three quality grades: “Standard”, “High Qu ality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic app liances; machine tool s; p ersonal electron i c equipment; and indust r ial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equ ipment; submersible repeaters; nuclear reactor control systems; medical equi pment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate and mal functi on s under certai n u se cond itions. Further,
Renesas Electronics pr oducts are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sal es office for details as to environmental matters such as t he environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Ren esas E lectro nics Corpor ation and also inclu des its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1880(L), 2SK1880(S)
Silicon N Channel MOS FE T REJ03G0983-0200
(Previous: ADE-208-1 331)
Rev.2.00
Sep 07, 2005
Application
High speed po wer switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
D
G
S
123
4
123
4
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID 1.5 A
Drain peak current ID(pulse)*1 3.0 A
Body to drain diode reverse drain current IDR 1.5 A
Channel dissipation Pch*2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µA VDS = 500 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 6.5 8.0 Ω I
D = 1 A, VGS = 10 V*3
Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A, VDS = 20 V*3
Input capacitan ce Ciss — 250 — pF
Output capacitance Coss — 55 — pF
Reverse transfer capacitance Crss — 8 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 25 — ns
Turn-off delay time td(off) — 35 — ns
Fall time tf — 30 — ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward voltage VDF — 0.95 — V IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time trr — 350 — µs IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
30
20
10
50 100 150
0
1 ms
PW = 10 ms (1 shot)
100 s
µ
10 s
µ
Operation in this
area is limited
by R (on)
DS
0.1 0.3 1 3 10 300 1000
Ta = 25°C
DC Operation (Tc = 25°C)
10
3
1
0.3
0.1
0.03
0.01
2.0
1.6
1.2
0.8
0.4
GS
V = 3.5 V
10 V
5 V
4.5 V
4 V
10 20 30 40 50
Pulse Test
0
DS
V = 20 V
Pulse Test
2.0
1.6
1.2
0.8
0.4
2
Tc = 25°C
–25°C
75°C
46810
0
Pulse Test
04
20
16
12
8
4
I = 1.5 A
D
1 A
0.5 A
812 2016
V = 10 V
GS
0.1 0.2 0.5 1 2 5
100
0.05
50
20
10
5
2
1
Pulse Test
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A) Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
20
16
12
8
4
I = 1 A
D
–40
0.5 A
0 40 80 120 160
Tc = –25°C
75°C
5
2
1
0.5
0.2
0.1
0.05
25°C
Pulse Test
V = 20 V
DS
0.02 0.05 0.1 0.2 0.5 1 2
di/dt = 100 A/ s
V = 0
Ta = 25°C
Pulse Test
5000
0.1 0.2 0.5 1 2 5 10
GS
µ
2000
1000
500
200
100
50
1000
100
10
1
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
01020304050
1000
800
600
400
200
20
16
12
8
4
0
I = 1.5 A
D
V = 100 V
250 V
400 V
DD
048121620
V = 100 V
250 V
400 V
DD
V
GS
V
DS
500
200
100
50
20
10
5
0.1 0.2 0.5 1 2 5 10
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
tf
tr
td(off)
td(on)
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
2.0
1.6
1.2
0.8
0.4
0.4 0.8 1.2 1.6 2.0
GS
Pulse Test
V = 10 V
0 V, –5 V
0
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1.0
3
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = s(t) ch – c
ch – c = 6.25°C / W. Tc = 25°C
PD = PW
T
PW
T
DM
γ•
θθ
Reverse Drain Current vs.
Source to Drain Voltage
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Package Name
PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1880L-E 3200 pcs Box (Sack)
2SK1880STL-E 3000 pcs Taping
Note: For some grades, producti on may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
