STEALTHt Diode 50 A, 600 V FFH50US60S Description The FFH50US60S is a STEALTHt diode optimized for low loss performance in output rectification. The STEALTH family exhibits low reverse recovery current (IRR), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRR reduces diode losses. www.onsemi.com CATHODE (BOTTOM SIDE METAL) Features * * * * * * Stealth Recovery, trr = 113 ns (@ IF = 50 A) Max Forward Voltage, VF = 1.54 V (@ TC = 25C) 600 V Reverse Voltage and High Reliability Operating Temperature = 175C Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant ANODE CATHODE TO-247 JEDEC STYLE 2 LEAD CASE 340 CL Applications * * * * MARKING DIAGRAM SMPS, Welders Power Factor Correction Uninterruptible Power Supplies Motor Drives $Y&Z&3&K 50US60S ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 120C) IF(AV) 50 A Repetitive Peak Surge Current (20 kHz Square Wave ) IFRM 100 A Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) IFSM 500 A Power Dissipation PD 200 W Avalanche Energy (1 A, 40 mH) EAVL 20 mJ TJ, TSTG -55 to 175 C TL 300 C TPKG 260 C DC Blocking Voltage Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Maximum Temperature for Soldering Package Body for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2003 March, 2020 - Rev. 3 1 $Y &Z &3 &K 50US60S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FFH50US60S/D FFH50US60S PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Methode Reel Size Tape Width Quantity FFH50US60S FFH50US60S TO247-2L Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit TC = 25C - - 100 mA TC = 125C - - 1 mA TC = 25C - 1.38 1.54 V TC = 125C - 1.37 1.53 V VR = 10 V, IF = 0 A - 110 - pF IF = 1 A, dIF/dt = 100 A/ms, VR = 15 V - 47 80 ns IF = 50 A, dIF/dt = 100 A/ms, VR = 15 V - 75 124 ns IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 25C - 113 - ns - 9.6 - A - 0.9 - mC - 235 - ns - 1.5 - - OFF STATE CHARACTERISTICS IR Instantaneous Reverse Current VR = 600 V ON CHARACTERISTICS VF Instantaneous Forward Voltage IF = 50 A DYNAMIC CHARACTERISTICS CJ Junction Capacitance SWITCHING CHARACTERISTICS Trr Reverse Recovery Time Trr Reverse Recovery Time IRR Reverse Recovery Current QRR Reverse Recovered Charge Trr Reverse Recovery Time S Softness Factor (tb/ta) IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 125C IRR Reverse Recovery Current - 15 - A QRR Reverse Recovered Charge - 2.3 - mC - 110 - ns - 0.8 - - Trr Reverse Recovery Time S Softness Factor (tb/ta) IF = 50 A, dIF/dt = 1000 A/ms, VR = 390 V, TC = 125C IRR Reverse Recovery Current - 46 - A QRR Reverse Recovered Charge - 3.1 - mC Maximum di/dt during tb - 1000 - A/ms dIM/dt THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case - - 0.75 C/W RqJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFH50US60S TYPICAL PERFORMANCE CURVES 100 1000 IR, Reverse Current (mA) IF, Forward Current (A) 90 80 70 60 50 175oC 40 125oC 30 o 75 C 20 25oC 175oC 100 150oC 125oC 10 100oC 1 75oC 0.1 10 25oC 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 0.01 100 2.0 200 VF, Forward Voltage (V) t, Recovery Times (ns) 100 80 60 40 20 ta at dIF/dt = 200A/ms, 500A/ms, 800A/ms 10 20 30 40 50 60 70 80 90 VR = 390V, TC = 125oC tb at I F = 100A, 50A, 25A 175 150 125 100 75 50 ta at IF = 100A, 50A, 25A 25 100 0 200 400 600 800 1000 1200 IF, Forward Current (A) dIF/dt, Current Rate of Change (A/ms) Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. dlF/dt 50 IRR, Max Reverse Recovery Current (A) t, Recovery Times (ns) 120 0 600 200 140 0 IRR, Max Reverse Recovery Current (A) 225 tb at dIF/dt = 200A/ms, 500A/ms, 800A/ms 160 500 Figure 2. Reverse Current vs. Reverse Voltage VR = 390V, TC = 125oC 180 400 VR, Reverse Voltage (V) Figure 1. Forward Current vs. Forward Voltage 200 300 VR = 390V, TC = 125oC dIF/dt = 800A/ms 40 30 dIF/dt = 500A/ms 20 dIF/dt = 200A/ms 10 0 0 10 20 30 40 50 60 70 80 90 100 60 VR = 390V, TC = 125oC 50 40 IF = 100A 30 IF = 50A 20 IF = 25A 10 0 0 200 400 600 800 1000 1200 IF, Forward Current (A) dIF/dt, Current Rate of Change (A/ms) Figure 5. Maximum Reverse Recovery Current vs. Forward Current Figure 6. Maximum Reverse Recovery Current vs. dIF/dt www.onsemi.com 3 FFH50US60S TYPICAL PERFORMANCE CURVES VR = 390V, TC = 125oC 2.0 1.8 IF = 100A 1.6 IF = 50A 1.4 IF = 25A 1.2 1.0 0.8 0.6 0 200 400 600 800 1000 1200 VR = 390V, TC = 125oC 5 4 IF = 100A 3 IF = 50A 2 IF = 25A 1 0 0 200 dlF/dt, Current Rate of Change (A/ms) 800 1000 1200 Figure 8. Reverse Recovery Charge vs. dlF/dt -22 1400 f = 1MHZ IRM(REC) , Max Reverse Recovery Current (A) 1000 800 600 400 200 -26 180 IF = 50A, VR = 390V, dIF /dt = 600A/usec -24 1200 170 160 IRM(REC) -28 150 -30 140 -32 130 -34 120 110 -36 -38 tRR 100 90 -40 0.1 1 10 -42 25 100 80 50 VR, Reverse Voltage (V) 75 100 125 150 175 TC, Case Temperature (5C) Figure 9. Junction Capacitance vs. Reverse Voltage IF(AV), Average Forward Current (A) CJ, Junction Capacitance (pF) 600 dlF/dt, Current Rate of Change (A/ms) Figure 7. Reverse Recovery Softness Factor vs. dIF/dt 0 0.03 400 Figure 10. Maximum Reverse Recovery Current and trr vs. Case Temperature 60 50 40 30 20 10 0 115 125 135 145 155 165 TC, Case Temperature (5C) Figure 11. DC Current Derating Curve www.onsemi.com 4 175 T, Recovery Times (ns) 2.2 6 QRR, Reverse Recovered Charge (mC) S, Reverse Recovery Softness Factor 2.4 FFH50US60S ZqJA, Normalized Thermal Impedance TYPICAL PERFORMANCE CURVES 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA+ TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, Rectangular Pulse Duration (s) Figure 12. Normalized Maximum Transient Thermal Impedance TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dlF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE + VGE dIF Trr dt ta 0 VDD - MOSFET t1 IF tb 0.25I RM IRM t2 Figure 13. Trr Test Circuit I=1A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)-VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)L) CURRENT SENSE Figure 14. Trr Waveforms and Definitions VAVL R + VDD IL IL I V Q1 VDD DUT - t0 Figure 15. Avalanche Energy Test Circuit t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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