© Semiconductor Components Industries, LLC, 2003
March, 2020 − Rev. 3
1Publication Order Number:
FFH50US60S/D
STEALTHt Diode
50 A, 600 V
FFH50US60S
Description
The FFH50US60S is a STEALTHt diode optimized for low loss
performance in output rectification. The STEALTH family exhibits
low reverse recovery current (IRR), low VF and soft recovery under
typical operating conditions. This device is intended for use
as an output rectification diode in Telecom power supplies and other
power switching applications. Lower VF and IRR reduces diode losses.
Features
•Stealth Recovery, trr = 113 ns (@ IF = 50 A)
•Max Forward Voltage, VF = 1.54 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
•Operating Temperature = 175°C
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•SMPS, Welders
•Power Factor Correction
•Uninterruptible Power Supplies
•Motor Drives
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current
(TC = 120°C)
IF(AV) 50 A
Repetitive Peak Surge Current
(20 kHz Square Wave )
IFRM 100 A
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
IFSM 500 A
Power Dissipation PD200 W
Avalanche Energy
(1 A, 40 mH)
EAVL 20 mJ
Operating and Storage Temperature
Range
TJ, TSTG −55 to 175 °C
Maximum Temperature for Soldering Leads
at 0.063 in (1.6 mm) from Case for 10 s
TL300 °C
Maximum Temperature for Soldering
Package Body for 10 s
TPKG 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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TO−247
JEDEC STYLE
2 LEAD
CASE 340 CL
MARKING DIAGRAM
$Y&Z&3&K
50US60S
K
A
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
CATHODE
(BOTTOM
SIDE METAL)
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
50US60S = Specific Device Code
FFH50US60S
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2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package
Packing
Methode Reel Size Tape Width Quantity
FFH50US60S FFH50US60S TO247−2L Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF STATE CHARACTERISTICS
IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 100 mA
TC = 125°C− − 1 mA
ON CHARACTERISTICS
VFInstantaneous Forward Voltage IF = 50 A TC = 25°C−1.38 1.54 V
TC = 125°C−1.37 1.53 V
DYNAMIC CHARACTERISTICS
CJJunction Capacitance VR = 10 V, IF = 0 A −110 −pF
SWITCHING CHARACTERISTICS
Trr Reverse Recovery Time IF = 1 A, dIF/dt = 100 A/ms, VR = 15 V −47 80 ns
IF = 50 A, dIF/dt = 100 A/ms, VR = 15 V −75 124 ns
Trr Reverse Recovery Time IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V,
TC = 25°C
−113 −ns
IRR Reverse Recovery Current −9.6 −A
QRR Reverse Recovered Charge −0.9 −mC
Trr Reverse Recovery Time IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V,
TC = 125°C
−235 −ns
SSoftness Factor (tb/ta)−1.5 − −
IRR Reverse Recovery Current −15 −A
QRR Reverse Recovered Charge −2.3 −mC
Trr Reverse Recovery Time IF = 50 A, dIF/dt = 1000 A/ms,
VR = 390 V, TC = 125°C
−110 −ns
SSoftness Factor (tb/ta)−0.8 − −
IRR Reverse Recovery Current −46 −A
QRR Reverse Recovered Charge −3.1 −mC
dIM/dt Maximum di/dt during tb−1000 −A/ms
THERMAL CHARACTERISTICS
RqJC Thermal Resistance Junction to Case − − 0.75 °C/W
RqJA Thermal Resistance Junction to Ambient TO−247 − − 30 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FFH50US60S
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3
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. dlF/dt
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
t, Recovery Times (ns)
dIF/dt, Current Rate of Change (A/ms)
t, Recovery Times (ns)
IF
, Forward Current (A)
0
20
30
50
70
80
100
0.25 0.5 0.75 1.0 1.25 1.5 1.75
175oC
125oC
2.0
75oC
25oC
90
60
40
10
0.01
0.1
1
10
100
1000
100 200 300 400 500 60
0
125oC
100oC
75oC
25oC
150oC
175oC
0
20
40
140
160
180
200
tb at dIF/dt = 200A/ms, 500A/ms, 800A/ms
VR = 390V, T
C = 125oC
ta at dIF/dt = 200A/ms, 500A/ms, 800A/ms
0 10 6070809010020 30 40 50
120
100
80
60
25
50
75
100
125
150
225
VR = 390V, TC = 125oC
175
tb at IF = 100A, 50A, 25A
ta at IF = 100A, 50A, 25A
0 200 400 600 800 1000 1200
200
Figure 5. Maximum Reverse Recovery
Current vs. Forward Current
Figure 6. Maximum Reverse
Recovery Current vs. dIF/dt
dIF/dt = 200A/ms
VR = 390V, TC = 125oC
0 10 60708090100
0
10
20
30
50
40
dIF/dt = 500A/ms
dIF/dt = 800A/ms
20 30 40 50
IF = 100A
IF = 25A
IF = 50A
VR = 390V, TC = 125oC
0
10
20
30
40
50
60
0 200 400 600 800 1000 1200
IRR, Max Reverse Recovery Current (A)
dIF/dt, Current Rate of Change (A/ms)IF
, Forward Current (A)
IRR, Max Reverse Recovery Current (A)
FFH50US60S
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4
TYPICAL PERFORMANCE CURVES
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt Figure 8. Reverse Recovery Charge vs. dlF/dt
Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. Maximum Reverse Recovery
Current and trr vs. Case Temperature
QRR, Reverse Recovered Charge (mC)
dlF/dt, Current Rate of Change (A/ms)
S, Reverse Recovery Softness Factor
dlF/dt, Current Rate of Change (A/ms)
IRM(REC) , Max Reverse
Recovery Current (A)
TC, Case Temperature (5C)
CJ, Junction Capacitance (pF)
VR, Reverse Voltage (V)
Figure 11. DC Current Derating Curve
TC, Case Temperature (5C)
IF(AV), Average Forward Current (A)
VR = 390V, TC = 125oC
0 200 400 600 800 1000 1200
IF = 25A
IF = 50A
IF = 100A
0.6
0.8
1.0
1.2
1.4
1.6
2.4
2.0
2.2
1.8
IF = 25A
VR = 390V, TC = 125oC
0
1
2
3
4
5
6
IF = 100A
IF = 50A
0 200 400 600 800 1000 1200
0.1 1 10 1000.03
f = 1MHZ
0
200
400
600
800
1000
1400
1200
T, Recovery Times (ns)
25 50 75 100 125 175
IRM(REC)
tRR
IF = 50A, VR = 390V, dIF/dt = 600A/usec
150
−38
−36
−34
−32
−30
−28
−26
−24
−22
−40
−42
100
110
120
130
140
150
160
170
180
90
80
0
155 165135 175
10
20
30
145125115
60
50
40
FFH50US60S
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5
TYPICAL PERFORMANCE CURVES
Figure 12. Normalized Maximum Transient Thermal Impedance
ZqJA, Normalized Thermal Impedance
t, Rectangular Pulse Duration (s)
10−510−210−1
0.01
10−410−3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA+ TA
PDM
t1
t2
1.0
TEST CIRCUITS AND WAVEFORMS
Figure 13. Trr Test Circuit Figure 14. Trr Waveforms and Definitions
Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage Waveforms
I = 1 A
L = 40 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1I
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
V
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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DOCUMENT NUMBER:
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TO−247−2LD
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