BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT23 General Purpose Interfacing Switch Case Material: UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Analog Switch Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification Commercial Automotive Commercial Automotive Case SOT23 SOT23 SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html K84 K84 Shanghai A/T Site Chengdu A/T Site Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS84 Document number: DS30149 Rev. 20 - 2 2000 L K84 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM YM Marking Information 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R ... ... Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D August 2013 (c) Diodes Incorporated BSS84 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20K Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current Thermal Characteristics Symbol VDSS VDGR VGSS ID IDM Continuous Continuous Value -50 -50 20 -130 -1.2 Units V V V mA A Value 300 417 -55 to +150 Units mW C/W C (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -50 -1 -2 -100 A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = +25C VDS = -50V, VGS = 0V, TJ = +125C VDS = -25V, VGS = 0V, TJ = +25C VGS = 20V, VDS = 0V V Test Condition Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (ON) gFS -0.8 0.05 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing BSS84 Document number: DS30149 Rev. 20 - 2 2 of 5 www.diodes.com August 2013 (c) Diodes Incorporated BSS84 400 -600 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -500 -400 -300 -200 -100 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 0.0 0 9 8 7 6 5 4 3 2 TA = 125C 1 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage 15 TA = 25C 0 -2 -3 -4 -5 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature BSS84 Document number: DS30149 Rev. 20 - 2 3 of 5 www.diodes.com 20.0 15.0 10.0 5.0 0.0 0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -1.0 August 2013 (c) Diodes Incorporated BSS84 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X BSS84 Document number: DS30149 Rev. 20 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com August 2013 (c) Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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