BSS84
Document number: DS30149 Rev. 20 - 2 1 of 5
www.diodes.com August 2013
© Diodes Incorporated
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(on) max ID
T
A
= +25°C
-50V 10 @ VGS = -5V -130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS84-7-F Commercial SOT23 3000/Tape & Reel
BSS84Q-7-F Automotive SOT23 3000/Tape & Reel
BSS84-13-F Commercial SOT23 10000/Tape & Reel
BSS84Q-13-F Automotive SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit To
p
View
D
GS
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Source
Gate
Drain
e3
Shanghai A/T Site
Chengdu A/T Site
Y
Y
M
K84
YM
K84
YM
BSS84
Document number: DS30149 Rev. 20 - 2 2 of 5
www.diodes.com August 2013
© Diodes Incorporated
BSS84
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS 20K V
DGR -50 V
Gate-Source Voltage Continuous VGSS 20 V
Drain Current (Note 5) Continuous ID -130 mA
Pulsed Drain Current IDM -1.2 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 300 mW
Thermal Resistance, Junction to Ambient R
JA 417 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.8 -2.0 V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
ON
)
10 V
GS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 12 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time tD
(
ON
)
10 ns VDD = -30V, ID = -0.27A,
RGEN = 50, VGS = -10V
Turn-Off Delay Time tD
(
OFF
)
18 ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
BSS84
Document number: DS30149 Rev. 20 - 2 3 of 5
www.diodes.com August 2013
© Diodes Incorporated
BSS84
0
50
100
25 50 75 100 125 150 175 200
,
WE
DISSI
A
I
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Max Pow er Diss i pa t i o n vs . Ambient Tem per atur e
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
AIN-S
E
EN
(mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6-5
I, D
AIN-
EN
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fi g. 3 Drain- C ur r e nt vs . Ga t e - S ource Vo l t ag e
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE-SO URCE (V)
Fig . 4 On-R esistance vs. Ga te - Sourc e Voltag e
GS
T= 25C
A
°
T = 125C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50 -25 0 25 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
0.0
5.0
10.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
F ig . 6 On - Resistance vs. Drai n- Cur re nt
D
15.0
20.0
25.0
R , ON-RESISTANCE ( )
DS(ON)
BSS84
Document number: DS30149 Rev. 20 - 2 4 of 5
www.diodes.com August 2013
© Diodes Incorporated
BSS84
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
BSS84
Document number: DS30149 Rev. 20 - 2 5 of 5
www.diodes.com August 2013
© Diodes Incorporated
BSS84
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