DSP45-16A
Phase leg
Standard Rectifier
1 2 3
Part number
DSP45-16A
Backside: anode/cathode
FAV
F
VV1.23
RRM
45
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP45-16A
V = V
A²s
A²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.26
R0.55 K/W
R
min.
45
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
270 WT = 25°C
C
RK/W
45
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.57
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
9.1 mΩ
V1.23T = °C
VJ
I = A
F
V
45
1.66
I = A
F
90
I = A
F
90
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
18
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
480
520
840
805
A
A
A
A
410
440
1.15
1.13
1600
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP45-16A
Ratings
000000
YYWWZ
Logo
Part Number
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
DSP45-16AR ISOPLUS247 (3) 1600
Package
T
VJ
°C
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
175-40
DSP45-12A
DSP45-12AZ
TO-247AD (3)
TO-268AA (D3Pak)
1200
1200
TO-247
Similar Part Package Voltage class
DSP45-16AZ TO-268AA (D3Pak) 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DSP45-16A 480665Tube 30DSP45-16AStandard
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 6.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP45-16A
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP45-16A
0.001 0.01 0.1 1
200
240
280
320
360
400
23456789011
0
200
400
600
800
1000
1200
0.5 1.0 1.5
0
10
20
30
40
50
60
70
80
0 1020304050
0
20
40
60
80
0 50 100 150 200
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
I
2
t
[A
2
s]
I
FSM
[A]
I
F
[A]
V
F
]s[t]V[
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[ms]
Z
th
[K/W]
0 50 100 150 200
0
20
40
60
80
T
C
[°C]
50 Hz, 80% V
RRM
T
VJ
= 45°C T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
t[ms]
I
dAVM
[A]
V
R
= 0 V
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
T
VJ
= 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
i
1
2
3
4
R
i
0.033
0.095
0.164
0.258
t
i
0.0006
0.0039
0.033
0.272
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
