Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current gain group AVCE = 5 V, IC= 2 mA, —220 —
Small Signal Current Gain B hfe f = 1 kHz —330 ——
C—600 —
Current gain group AVCE = 5 V, IC= 2 mA, 1.6 2.7 4.5
Input Impedance B hie f = 1 kHz 3.2 4.5 8.5 kΩ
C 6 8.7 15
Current gain group AVCE = 5 V, IC= 2 mA, —18 30
Output Admittance B hoe f = 1kHz —30 60 µS
C—60 110
Current gain group AVCE = 5 V, IC= 2 mA, —1.5 • 10-4 —
Reverse Voltage Transfer Ratio B hre f = 1kHz —2 • 10-4 ——
C—3 • 10-4 —
Current gain group A—90 —
BV
CE = 5 V, IC= 10 µA—150 —
C—270 —
Current gain group A 110 180 220
DC Current Gain B hFE VCE = 5 V, IC= 2 mA 200 290 450 —
C 420 500 800
Current gain group A—120 —
BV
CE = 5 V, IC= 100 mA —200 —
C—400 —
Collector Saturat ion Voltage VCEsat IC= 10 mA, IB= 0.5 mA —80 200 mV
IC= 100 mA, IB= 5 mA —200 600
Base Saturat ion Voltage VBEsat IC= 10 mA, IB= 0.5 mA —700 —mV
IC= 100 mA, IB= 5 mA —900 —
Base-Emitter Voltage VBE VCE = 5 V, IC= 2 mA 580 660 700 mV
VCE = 5 V, IC= 10 mA ——720
BC546 VCE = 80 V —0.2 15 nA
Collector-Emitter BC547 VCE = 50 V —0.2 15 nA
Cutoff Current BC548 ICES VCE = 30 V —0.2 15 nA
BC546 VCE = 80 V, Tj= 125°C—— 4µA
BC547 VCE = 50 V, Tj= 125°C—— 4µA
BC548 VCE = 30 V, Tj= 125°C—— 4µA
Gain-Bandwidth Product fTVCE = 5 V, IC= 10 mA, —300 —MHz
f = 100 MHz
Collector-Base Capacitance CCBO VCB = 10 V, f = 1 MHz —3.5 6 pF
Emitter-Base Capacitance CEBO VEB = 0.5 V, f = 1 MHz —9—pF
BC546, BC547 VCE = 5 V, IC= 200 µA,
Noise Figure BC548 FR
G= 2 kΩ, f = 1 kHz, —210dB
∆f = 200 Hz
BC546 thru BC548
Small Signal Transistors (NPN)