TEXAS INSTR COPTOF be DE ssuiz2e OO3b8a8 7 I me _ } | 8961726 TEXAS INSTR COPTO) : 62C 36888 D oT , TIP115, TIP116, TIP117 : P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 . @ Designed for Complementary Use With TIP110, TIP111, TIP112. T-33-31 _ ' @ High SOA Capability, 40 Vand 1.25A @ 50 Wat 25C Cas Temperature : @ 4A Rated Collector Current i @ Min hfe of 500 at4v,2A | @ 25 mJ Reverse Energy Rating | device schematic TO-220AB PACKAGE EMITTER COLLECTOR THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP115 TIP117 current E current current areas at case temperature Continuous device dissipation at (or below) 25C case temporature a t (see Note 2) . a F Continuous device dissipation at (or below) 25C free-air tamperature 2 i {see Note 3) 3 : energy i QO : range i mm case a i NOTES: 1, This value applies for ty < 0.3 ms, duty cycle < 10 %. E 1 2. Derate linearly to 150C case temperature at the rate of 0.4 W/C or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 150C frea-air temperature at the rate of 16 mW/C or refer to Dissipation Derating Curve, Figure 10. 4. . This rating is based on the capability of the transistors to operate safely in the circuit of Figure 2. L = 20mH, Rapa = 1009, Vep2 = OV,Rs = 0.19, Voc = 20V. Energy =I 21/2. : EXAS % , 5.147 INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75205 mTEXAS INSTR LOPTO} b2 DEP ace172, oosn8as 9 Of _ ( : Be8T726 TEXAS INSTR COPTO) e2c 36889! | TIP115, TIP116, TIP117 T-33-31 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS . PARAMETER VIBRICEO IcEO IcBo ~ HEE VBE VcE(sat} VF . electrical characteristics at 25C case temperature JEST CONDITIONS See Note 5 ceE= CB CE= , See Notes Sand 6 ce = 4V, See Notes 5 and 6 ceE= 4NV, See Notes S and 6 See Notes 5 and 6 See Notes 5 and 6 -2.8 2.6 NOTES: 5. These parameters must be measured using pulse techniques, ty, = 300 ys, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts located within 3,2 mm (0.125 inch) from the device body. resistive-load switching characteristics at 25C case temperature TIP116 TIP117 400 - 2.8 -2.5 3.5 3.5 PARAMETER TEST CONDITIONST MIN TYP MAX | UNIT ton Ic = - 2A, I31 = 8mA, Ip2 = 8mA, 2.6 ; Toff Vee(ott) = 5V- RL = 152, See Figure 1 4.6 B a 0 QO S3DIA9 Tt Voltage and current values shown ere nominal, exact values vary slightly with transistor parameters, . 5-148 xas 4B TE INSTRUMENTS 128 POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR fO0PTOF ba DE Mf asu1724 o03ba90 5 I ( - 8961726 TEXAS INSTR COPTO) 62C 36890 OD pee TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T+-33~-31 INPUT 7 MONITOR OUTPUT MONITOR Phe )teEn ww we eee eee 1IN914 Age = 2.5 koe 1N914 1N974 14N914 270 pF Vep1 = 44V Von = ~42 VAT # . | ADJUST FOR INPUT MONITOR . BV iweuT oy ~ oo OL cH MONITOR i Von =~ 42 - => 90% { i 90% i OUTPUT MONITOR 10% AL = 152 Voc = 30V VOLTAGE WAVEFORMS 8 NOTES: A. Vgenis a 30-V pulse into a 502 termination. 2 B. The Vgen waveform is supplied by a generator with the following characteristics: ty < 15ns, ty < 15ns, Zour = 509, > tw = 20us, duty cycle < 2%, o C, Waveforms are monitored on an oscilloscope with the following characteristics: t; < 15s, Rin 2 10 MQ, Cin < 11.5 pF. a D. Resistors must be noninductive types. a &. The d-c power supplies mey require additional bypassing in order to minimize ringing. = = FIGURE 1. RESISTIVE-LOAD SWITCHING T we EXAS 5-149 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 = Son ee =a = = SESE SeTEXAS INSTR LOPTO} b2 DEB ssei725 o03Ka52 7 7 ( / 8961726 TEXAS INSTR COPTO) oo 62C 36891 D | _. - THP115,TIP116, TIP117 (7-33-31 : P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS Shoop hs PARAMETER MEASUREMENT INFORMATION Vce MONITOR ee ee eee TEST CIRCUIT i (See Nate A) 6V--- : INPUT VOLTAGE . 0 ! | pt gee tw SS ms 1 I J = 100 ms anted . rt 1 i . - i 1 t 1 | I : o! | i \ COLLECTOR { I i CURRENT | 1 ; 1684 4t- 4------- Wl ; 2 ' 14 i 1 | ; e . 1 tl ! i ~ ote ty 1 i 1d 1 | i = Veetsat) - -4 4.-- --- Po | ; 9 72200 met f | Oo COLLECTOR i ; & VOLTAGE \ 8 Visricer -+--W-------- = a VOLTAGE AND CURRENT WAVEFORMS | NOTE A: Input pulse duration fs increased untillcyy = 1.58 A, FIGURE 2. INDUCTIVE-LOAD SWITCHING | \ I ' we 7 5-150 - _ JExas INSTRUMENTS POST OFFICE 8OX 225012 @ DALLAS, TEXAS 76265 (TEXAS INSTR LOPTOF b2 DEB ssn1726 ooseage 5 T _ - aot a a ee yee Tata 7 8961726 TEXAS INSTR COPTO) 62C 36892 D TIP115, TIP116, TIP117_ P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ' TYPICAL CHARACTERISTICS E STATIC FORWARD CURRENT TRANSFER RATIO . vs HO . COLLECTOR CURRENT > rm VcE=-4V See Notes 5 and 6 1k hee Static Forward Current Transfer Ratio VpeBase-Emitter VoltageV roa ,oto4 oe pep tJ BP Nw. o> Nu Oo NN BF ODO PW I S 4 T-33-31 - = SF BASE-EMITTER VOLTAGE vs CASE TEMPERATURE . VCE=-4A See Notes 5 and 6 ' 100 0 -04 -1 -4 -100 = --50 0 50 7100 180 I Collector Currant A TcCase TemperatureC FIGURE 3 FIGURE 4 COLLECTOR-EMITTER SMALL-SIGNAL COMMON-EMITTER SATURATION VOLTAGE FORWARD CURRENT TRANSFER RATIO : vs . vs : > CASE TEMPERATURE e FREQUENCY 4-4 40 = ip=8mA = VcE=10V ' S i=-2A tc=-1A : _ See Notes 5 and 6 2 Te = 25C 2 E 8 e . s Qo : a 5 n | 3 3 8 | o g $s } E 2 a I uo -4 5 i 5 m4 o i 5 a. 6 a j r 3 E , - ! tu 9 oO 0.4 2 1 > 100 -50 0 50 100 180 = 4 4 10 . ToCase TemperatureC f-FrequencyMHz t i FIGURE 5 FIGURE 6 i NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located : within 3,2 mm (0.125 inch) from the device body. b 4 XAS 5-151 TE INSTRUME POST OFFICE BOX 225012 DALLAS, TEXAS 75265 NTSTEXAS INSTR {OPTO} b2 Depp acwizes oosna9a 0 62C 36893. pv | 8961726 TEXAS INSTR (OPTO) T-33-31 TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS | , toa MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT MAXIMUM COLLECTOR CURRENT vs vs COLLECTOR-EMITTER VOLTAGE UNCLAMPED INDUCTIVE LOAD t 10 DC =20V To <25C < Rep2 = 100.2 Tt 4 i To = 25C & s See Figure 2 2 5 2 oO : . 3 g 3 s E t z TIP115 E 704 TIP116 5 s TIP117 = ] o 2 s 01 See Note 7 -10 -~40 100 - 400 2 4 10 40 100 200 | VogeCollector-Emitter VoltageA LUnclamped Inductive LoadmH FIGURE 7 FIGURE 8 NOTE 7. Above this point the safe operating area has not baen defined. | THERMAL INFORMATION CASE TEMPERATURE . FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE F 60 F 26 5 9 ' = 50 a : 4 2 g 2 a 2, a : 9 8 Rauc S2.5 C/w 3 2 40 2 \ Rada < 62.5 CW Oo 8 616 o 3 a N\ Ss. 8 -30 3 o 2 2 IN o 2 1 N an 20 & E E ; N\ 0. E 10 - N a a + 7 & 0 0 0 2 50 75 100 125 150 0 2 50 76 100 125 150 TcoCase TemperatureC TaFree-Air TemperatureC FIGURE 9 FIGURE 10 wy . 5-152 TEXAS ; INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 ae : _!