MJH16006 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





 

   

1 kV SWITCHMODE Series

These transistors are designed for high–voltage, high–speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for

line–operated switchmode applications.

Typical Applications: Features:

•Switching Regulators •Collector–Emitter Voltage — VCEV = 1000 Vdc

•Inverters •Fast Turn–Off Times

•Solenoids 80 ns Inductive Fall Time — 100

C (Typ)

•Relay Drivers 120 ns Inductive Crossover Time — 100

C (Typ)

•Motor Controls 800 ns Inductive Storage Time — 100

C (Typ)

•Deflection Circuits •100

C Performance Specified for:

Reverse–Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

•Extended FBSOA Rating Using Ultra–fast Rectifiers

•Extremely High RBSOA Capability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎ

500

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEV

ÎÎÎÎÎ

1000

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak(1)

ÎÎÎÎ

ICM

ÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak(1)

ÎÎÎÎ

IBM

ÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation@ TC = 25

@ TC = 100

Derate above TC = 25

ÎÎÎÎ

ÎÎÎÎÎ

125

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–55 to 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎ

ÎÎÎÎÎ

275

ÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJH16006A/D

 Motorola, Inc. 1995

POWER TRANSISTORS

8 AMPERES

500 VOLTS

150 WATTS



CASE 340D–01

REV 3

MJH16006A

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

500

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc)

(VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

0.003

0.020

ÎÎÎÎ

0.15

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 1000 Vdc, RBE = 50 Ω, TC = 100

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

0.020

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

0.005

ÎÎÎÎ

0.15

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 14a or 14b

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.6 Adc)

(IC = 5 Adc, IB = 1 Adc)

(IC = 5 Adc, IB = 1 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.35

0.50

0.60

ÎÎÎÎ

0.7

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 5 Adc, IB = 1 Adc)

(IC = 5 Adc, IB = 1 Adc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

350

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

IB1 = 0.66 Adc,

VBE(off) = 5 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TJ = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

800

ÎÎÎÎ

2000

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

IB1 = 0.66 Adc,

VBE(off) = 5 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TJ = 100

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎ

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

IB1 = 0.66 Adc,

VBE(off) = 5 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

120

ÎÎÎÎ

300

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IB1 = 0.66 Adc,

VBE(off) = 5 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TJ = 150

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1000

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TJ = 150

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

150

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 2)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

VCC = 250 Vdc,

IB1 = 0.66 Adc,

PW = 30 µs,

Duty Cycle

2%)

ÎÎÎÎÎÎÎÎ

(IB2 = 1.3 Adc,

RB1 = RB2 = 4 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎ

C = 5 Adc,

VCC = 250 Vdc,

IB1 = 0.66 Adc,

PW = 30 µs,

Duty Cycle

2%)

ÎÎÎÎÎÎÎÎ

B2 = 1.3 Adc,

RB1 = RB2 = 4 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

400

ÎÎÎÎ

700

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

VCC = 250 Vdc,

IB1 = 0.66 Adc,

PW = 30 µs,

Duty Cycle

2%)

ÎÎÎÎÎÎÎÎ

(IB2 = 1.3 Adc,

RB1 = RB2 = 4 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

1400

ÎÎÎÎ

3000

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IB1 = 0.66 Adc,

PW = 30 µs,

Duty Cycle

2%)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

175

ÎÎÎÎ

400

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

Duty Cycle

2%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

475

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

2%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle

2%.

MJH16006A

Motorola Bipolar Power Transistor Device Data

VBE, BASE–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

0.2 1

0.5

0.3

IB, BASE CURRENT (AMPS)

0.5

0.3

0.2

100

0.2

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

10.3 0.5 1 5 10 20

Figure 2. Collector–Emitter Saturation Region

0.1 IC, COLLECTOR CURRENT (AMPS)

0.1 0.3 0.5

0.5

hFE, DC CURRENT GAIN

1 2 3 10

Figure 3. Collector–Emitter Saturation Region

50.50.1 0.2 0.3 1 102 50.5

Figure 4. Base–Emitter Saturation Region

Figure 5. Capacitance

10 k

VR, REVERSE VOLTAGE (VOLTS)

10 10

1 k

100 850

C, CAPACITANCE (pF)

100

0.1

TJ = 25

Cib

3 A

TJ = 100

–55

2 3

IC/IB = 10

TJ = 100

IC/IB = 10

TJ = 25

1.5

2 10

0.1

0.3

0.2

0.2 5

5 A

8 A

1 A

IC/IB = 10

TJ = 25

0.3 3

Cob

TYPICAL STATIC CHARACTERISTICS

MJH16006A

4 Motorola Bipolar Power Transistor Device Data

tc, CROSSOVER TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Storage Time Figure 7. Storage Time

3000

2000

1000

700

500

300

, STORAGE TIME (ns)tsv

400

tfi, COLLECTOR CURRENT FALL TIME (ns)tc, CROSSOVER TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 10

3000

2000

1000

700

500

300

, STORAGE TIME (ns)tsv

400

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 10

400

300

200

100

40 1

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 10

500

300

200

100

50 1

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Collector Current Fall Time Figure 9. Collector Current Fall Time

Figure 10. Crossover Time Figure 11. Crossover Time

2 V

VBE(off) = 0 V

IC/IB1 = 5, TC = 75°C, VCE(pk) = 400 V IC/IB1 = 10, TC = 75°C, VCE(pk) = 400 V

5 V

2 3 5 7 101

2 V

5 V

2 V

5 V

0 V

2 V

5 V

2 3 5 7 10

400

300

200

100

40 1

2 V

5 V

2 V 5 V

2 3 5 7 10

500

300

200

100

50 1

f = IC

IB1

VBE(off) = 0 V

VBE(off) = 0 V VBE(off) = 0 V

VBE(off) = 0 V VBE(off) = 0 V 2 V

5 V

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

MJH16006A

Motorola Bipolar Power Transistor Device Data

+15

150

Ω

100

Ω

100

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500

Voff

Ω

+10

MTP12N10

MTP8P10

RB1

RB2

Drive Circuit

*Tektronix AM503

*P6302 or Equivalent Scope — Tektronix

7403 or Equivalent T1

[

Lcoil (ICpk)

VCC

Note: Adjust Voff to obtain desired VBE(off) at Point A.

T1 adjusted to obtain IC(pk)

T1+V

–V

0 V

*IB

*ICL

T.U.T. MR918

Vclamp VCC

IC(pk)

VCE(pk)

VCE

IB1

IB2

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

Inductive Switching

L = 750 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

RBSOA

L = 750 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Table 1. Inductive Load Switching

IB2, REVERSE BASE CURRENT (AMPS)

Figure 12. Inductive Switching Measurements Figure 13. Peak Reverse Base Current

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

IB1 = 1 A

0.5 A

0 2 4 6 8

IC = 5 A

TJ = 25

tfi

trv

t, TIME

90% IB1

IC(pk) VCE(pk)

90% VCE(pk) 90% IC(pk)

10% VCE(pk) 10%

IC(pk) 2% IC

tsv tti

VCE

td and trts and tf

H.P. 214

EQUIV.

P.G.

50 RB = 8.5

Ω

*IB*IC

T.U.T. RL

VCC

Vin

0 V

≈

11 V

≤

15 ns

*Tektronix AM503

*P6302 or Equivalent

VCC 250 V

RL50 Ω

IC5 A

IB0.66 A

+15

150

Ω

100

Ω

100

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500

Voff

Ω

+10 V

MTP12N10

MTP8P10

RB1

RB2

T.U.T. *IC

*IB

ARL

VCC

V(off) adjusted

to give specified

off drive

RL50 Ω

Table 2. Resistive Load Switching

MJH16006A

6 Motorola Bipolar Power Transistor Device Data

ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ

IC, COLLECTOR CURRENT (AMPS)

0.1

Figure 14. Maximum Rated Forward Biased Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02 1 10 2000

0.5

0.2

0.1

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

100 1000

a. MJ16006A

REGION II — EXPANDED FBSOA USING

REGION II — MUR8100 ULTRA–FAST

REGION II — RECTIFIER, SEE FIGURE 17

TC = 25

C10

s1 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02

0.5

0.2

0.1

a. MJH16006A

REGION II —

EXPANDED FBSOA USING

MUR8100 ULTRA–FAST

RECTIFIER, SEE FIGURE 17

TC = 25

C10

1 ms

VCE(pk), COLLECTOR–EMITTER VOLTAGE (VOLTS)

0100

100 200 300 400 900

Figure 15. Maximum Reverse Biased

Safe Operating Area

IC/IB1

≥

≤

100

POWER DERATING FACTOR (%)

100

0TC, CASE TEMPERATURE (

040 200

80 120 160

Figure 16. Power Derating

500 600 700 800

VBE(off) = 0 V

SECOND BREAKDOWN DERATING

THERMAL DERATING

0.3

0.1 1 10 2000100 1000

IC, COLLECTOR CURRENT (AMPS)

IC(pk), PEAK COLLECTOR CURRENT (AMPS)

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

VBE(off) = 5 V

100 ns 100 ns

GUARANTEED SAFE OPERATING AREA LIMITS

Figure 17. Switching Safe Operating Area

+15

150

Ω

100

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500

Voff

Ω

+10

MTP12N10

RB1

RB2

F100

Ω

MTP8P10

MUR105

MUR1100

T.U.T.

MUR8100

VCE (1000 V MAX)

F10 mH

Note: Test Circuit for Ultra–fast FBSOA

Note: RB2 = 0 and VOff = –5 Volts

MJH16006A

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

JC(t) = r(t) R

JC = 1.17 or 1

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.02

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

100

Figure 18. Thermal Response

0.5

0.3

0.07

0.03

0.03 0.3 3 30 3000.02

0.05

0.01

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 14a and 14b is based on TC = 25

TJ(pk) is variable depending on power level. Second break-

down pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25

C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable current

at the voltages shown on Figures 14a and 14b may be found

at any case temperature by using the appropriate curve on

Figure 16.

TJ(pk) may be calculated from the data in Figure 18. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base–to–emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Biased Safe Operating Area

and represents the voltage current condition allowable dur-

ing reverse biased turnoff. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 15 gives the RBSOA character-

istics.

SWITCHMODE III DESIGN CONSIDERATIONS

1. FBSOA —

Allowable dc power dissipation in bipolar power transistors

decreases dramatically with increasing collector emitter

voltage. A transistor which safely dissipates 100 watts at

10 volts will typically dissipate less than 10 watts at its rated

VCEO(sus). From a power handling point of view, current and

voltage are not interchangeable (see Application Note

AN875).

2. TURN–ON —

Safe turn–on load line excursions are bounded by pulsed

FBSOA curves. The 10 µs curve applies for resistive loads,

most capacitive loads, and inductive loads that are clamped

by standard or fast recovery rectifiers. Similarly, the 100 ns

curve applies to inductive loads which are clamped by ultra–

fast recovery rectifiers, and are valid for turn–on crossover

times less than 100 ns (see Application Note AN952).

At voltages above 75% of VCEO(sus), it is essential to pro-

vide the transistor with an adequate amount of base drive

VERY RAPIDLY at turn–on. More specifically , safe operation

according to the curves is dependent upon base current rise

time being less than collector current rise time. As a general

rule, a base drive compliance voltage in excess of 10 volts is

required to meet this condition (see Application Note

AN875).

3. TURN–OFF —

A bipolar transistor ’s ability to withstand turn–off stress is

dependent upon its forward base drive. Gross overdrive vio-

lates the RBSOA curve and risks transistor failure. For this

reason, circuits which use fixed base drive are often more

likely to fail at light loads due to heavy overdrive (see Ap-

plication Note AN875).

4. OPERATION ABOVE VCEO(sus) —

When bipolars are operated above collector–emitter

breakdown, base drive is crucial. A rapid application of ade-

quate forward base current is needed for safe turn–on, as is

a stiff negative bias needed for safe turn–off. Any hiccup in

the base–drive circuitry that even momentarily violates either

of these conditions will likely cause the transistor to fail.

Therefore, it is important to design the driver so that its out-

put is negative in the absence of anything but a clean crisp

input signal (see Application Note AN952).

MJH16006A

8 Motorola Bipolar Power Transistor Device Data

SWITCHMODE DESIGN CONSIDERATIONS (Cont.)

5. RBSOA —

Reverse Biased Safe Operating Area has a first order de-

pendency on circuit configuration and drive parameters. The

RBSOA curves in this data sheet are valid only for the condi-

tions specified. For a comparison of RBSOA results in sever-

al types of circuits (see Application Note AN951).

6. DESIGN SAMPLES —

Transistor parameters tend to vary much more from wafer

lot to wafer lot, over long periods of time, than from one de-

vice to the next in the same wafer lot. For design evaluation

it is advisable to use transistors from several different date

codes.

7. BAKER CLAMPS —

Many unanticipated pitfalls can be avoided by using Baker

Clamps. MUR105 and MUR1100 diodes are recommended

for base drives less than 1 amp. Similarly, MUR405 and

MUR4100 types are well–suited for higher drive require-

ments (see Article Reprint AR131).

MJH16006A

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–01

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

MJH16006A

10 Motorola Bipolar Power Transistor Device Data

How to reach us:

USA/ EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Af firmative Action Employer .

MJH16006A/D

*MJH16006A/D*

◊