MMRF5017HS
1
RF Device Data
NXP Semiconductors
RF Power GaN Transistor
This 125 W RF power GaN transistor is capable of broadband operation from
30 to 2200 MHz and includes input matching for extended bandwidth
performance. With its high gain and high ruggedness, this device is ideally
suited for CW, pulse and broadband RF applications.
This part is characterized and performance is guaranteed for applications
operating in the 30 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
Typical Performance: VDD =50Vdc,T
A=25C
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
D
(%)
30–940 (1,2) CW 90 16.0 45.0
520 (1) CW 125 18.0 59.1
940 (1) CW 80 18.4 44.0
2200 Pulse
(100 sec, 20% Duty Cycle)
200 17.0 57.0
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
520 (1) Pulse
(100 sec,
20% Duty Cycle)
> 10:1 at
All Phase
Angles
3.4
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 30–940 MHz wideband reference circuit (page 4).
2. The values shown are the minimum measured efficiency performance numbers
across the indicated frequency range.
Features
Advanced GaN on SiC, offering high power density
Decade bandwidth performance
Input matched for extended wideband performance
High ruggedness: > 10:1 VSWR
Typical Applications
Ideal for military end--use applications, including the following:
– Narrowband and multi--octave wideband amplifiers
– Radar
– Jammers
–EMCtesting
Also suitable for commercial applications, including the following:
– Public mobile radios, including emergency service radios
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: MMRF5017HS
Rev. 0, 06/2018
NXP Semiconductors
Technical Data
30–2200 MHz, 125 W CW, 50 V
WIDEBAND
RF POWER GaN TRANSISTOR
MMRF5017HS
NI--400S--2S
Note: The backside of the package is the
source terminal for the transistor.
(Top View)
Drain
21
Figure 1. Pin Connections
Gate
2018 NXP B.V.
2
RF Device Data
NXP Semiconductors
MMRF5017HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS 125 Vdc
Gate--Source Voltage VGS –8, 0 Vdc
Operating Voltage VDD 0to+55 Vdc
Maximum Forward Gate Current @ TC=25C IGMAX 24 mA
Storage Temperature Range Tstg –65to+150 C
Case Operating Temperature Range TC–55to+150 C
Operating Junction Temperature Range TJ–55to+225 C
Absolute Maximum Channel Temperature (1) TMAX 350 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD154
0.77
W
W/C
Table 2. Thermal Characteristics
Characteristic (2) Symbol Value Unit
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
CW: Case Temperature 81C, 80 W CW, 50 Vdc, IDQ = 200 mA, 940 MHz
RJC (IR) 1.3 (3) C/W
Thermal Resistance by Finite Element Analysis, Channel--to--Case
Case Temperature 90C, PD=96W
RCHC
(FEA)
1.77 (4) C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JS--001--2017) 2, passes 2500 V
Charge Device Model (per JS--002--2014) II, passes 200 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS =–8Vdc,I
D=20mAdc)
V(BR)DSS 150 — — Vdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=20mAdc)
VGS(th) –3.8 –3.0 –2.3 Vdc
Gate Quiescent Voltage
(VDD =48Vdc,I
D= 200 mAdc, Measured in Functional Test)
VGS(Q) –3.6 –3.1 –2.3 Vdc
Gate--Source Leakage Current
(VDS =0Vdc,V
GS =–5Vdc)
IGSS –7.5 — — mAdc
Table 5. Ordering Information
Device Tape and Reel Information Package
MMRF5017HSR5 R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel NI--400S--2S
1. Reliability tests were conducted at 225C. Operation with TMAX at 350C will reduce median time to failure.
2. Characterized in 30–940 MHz reference circuit at 940 MHz and 80 W CW output power.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
the expression MTTF (hours) = 10[A + B/(T + 273)], where Tis the channel temperature in degrees Celsius, A= –10.3 and B= 8260.
MMRF5017HS
3
RF Device Data
NXP Semiconductors
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS downto–5V
3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to
reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
4
RF Device Data
NXP Semiconductors
MMRF5017HS
30–940 MHz WIDEBAND REFERENCE CIRCUIT — 2.05.0(5.1 cm 12.7 cm)
Figure 2. MMRF5017HS Wideband Reference Circuit Component Layout — 30–940 MHz
*C1, C2, C3, C4, C7, C9, C11, C12, C13, C14, C16, C17, C18 and C19 are mounted vertically.
L1
C2*
C17*
T1 T2
Q1
C1*
D103193
Rev. 0
R1
L2
C6
C3*
C4* C7*
C8
C9*
J1
C10
C11*
R3
L3
L4
L7
L6
C16*
C18*
L5
C5 R4
R2
C15 C12*
C19*
C13* C14*
aaa-030768
Table 6. MMRF5017HS Wideband Reference Circuit Component Designations and Values — 30–940 MHz
Part Description Part Number Manufacturer
C1 1500 pF Chip Capacitor ATC700B152JT50XT ATC
C2 100 pF Chip Capacitor ATC800B101JT500XT ATC
C3, C7 39 pF Chip Capacitor ATC800B390JT500XT ATC
C4 680 pF Chip Capacitor ATC800B681JT50XT ATC
C5, C8 2.2 F Chip Capacitor C3225X7R2A225KT TDK
C6 22 F, 25 V Tantalum Capacitor TPSD226M025R0200 AVX
C9 0.1 F Chip Capacitor C1206C104K1RACTU Kemet
C10 220 F, 100 V Electrolytic Capacitor EEV--FK2A221M Panasonic–ECG
C11 220 pF Chip Capacitor ATC100B221JT200XT ATC
C12 2.2 pF Chip Capacitor ATC800B2R2BT500XT ATC
C13, C14, C19 5.6 pF Chip Capacitor ATC800B5R6CT500XT ATC
C15 10 pF Chip Capacitor ATC800B100JT500XT ATC
C16, C18 470 pF Chip Capacitor ATC800B471JT200XT ATC
C17 330 pF Chip Capacitor ATC800B331JT200XT ATC
J1 #16 AWG, Magnetic Wire, Length = 2.58074 Belden
L1 270 nH Inductor 0603AF--271XJRU Coilcraft
L2 422 nH inductor 132--18SMJL Coilcraft
L3 240 nH Inductor 0603AF--241XJRU Coilcraft
L4, L5, L6, L7 1.3 H Inductor 4310LC--132KE Coilcraft
Q1 RF Power GaN Transistor MMRF5017HS NXP
R1 51 , 1/2 W Chip Resistor CRCW201051R0JNEF Vishay
R2 10 , 1/4 W Chip Resistor CRCW080510R0FKEA Vishay
R3, R4 100 , 4 W Chip Resistor CW12010T0100GBK ATC
T1, T2 High Power Transformer, 30–1000 MHz, 50 to 12.5 XMT0310B5012 Anaren
PCB Shengyi S1000--2, 0.031,r=4.8 D103193 MTL
MMRF5017HS
5
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 30–940 MHz
WIDEBAND REFERENCE CIRCUIT
Figure 3. Power Gain and Drain Efficiency versus
Output Power and Frequency
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
0
28
30
24
26
5
75
D, DRAIN EFFICIENCY (%)
200
15
55
65
18
20
22
100 300 400 500
25
35
45
600 700 800 900 1000
16
90 W
Gps
D
10 W
VDD =50Vdc,I
DQ = 200 mA, CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power – 520 MHz
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
10
24
0
20
22
16
18
5
75
D, DRAIN EFFICIENCY (%)
40
15
35
45
65
12
14
20 60 160
25
55
80 100 120 140
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power – 940 MHz
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
14
21
0
19
20
17
18
15
50
D, DRAIN EFFICIENCY (%)
20
30
45
15
16
100
20
25
40
40 60 80
35
Gps
D
VDD =50Vdc,I
DQ = 200 mA, CW, f = 520 MHz
D
VDD =50Vdc,I
DQ = 200 mA, CW, f = 940 MHz
90 W
Gps
6
RF Device Data
NXP Semiconductors
MMRF5017HS
30–940 MHz WIDEBAND REFERENCE CIRCUIT
f
MHz
Zsource
Zload
20 39.0 + j23.1 11.3–j5.0
30 59.6 – j3.7 11.0–j3.1
50 28.3 – j28.7 11.1–j1.8
70 15.5 – j22.2 11.2–j1.3
90 11.1–j17.3 11.3–j1.1
136 7.9–j11.3 10.7 – j1.4
174 7.0 – j8.9 10.0 – j0.3
360 6.2 – j5.0 11.9–j0.2
440 6.0 – j4.6 11.9–j0.0
520 5.5 – j4.7 12.3 – j0.1
760 2.5 – j4.0 14.4 – j1.2
850 1.7 – j2.9 16.2 – j3.5
940 1.1 – j1.8 15.9 – j7.9
1000 1.0 – j1.1 13.2 – j10.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 6. Wideband Series Equivalent Source and Load Impedance — 30–940 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network 50
50
MMRF5017HS
7
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
8
RF Device Data
NXP Semiconductors
MMRF5017HS
MMRF5017HS
9
RF Device Data
NXP Semiconductors
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0June 2018 Initial release of data sheet
10
RF Device Data
NXP Semiconductors
MMRF5017HS
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
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E2018 NXP B.V.
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Document Number: MMRF5017HS
Rev. 0, 06/2018