NTMFS4C028N
www.onsemi.com
2
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 20 Apk, EAS = 20 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 4.9
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 49.8
Junction−to−Ambient – Steady State (Note 5) RqJA 164.6
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 21.0
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 8.4 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
14.4 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 3.9 4.73
mW
VGS = 4.5 V ID = 18 A 5.8 7.0
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 50 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1252
pF
Output Capacitance COSS 610
Reverse Transfer Capacitance CRSS 126
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.101
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
10.9
nC
Threshold Gate Charge QG(TH) 1.9
Gate−to−Source Charge QGS 3.4
Gate−to−Drain Charge QGD 5.4
Gate Plateau Voltage VGP 3.1 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 22.2 nC
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.