CCD area image sensors S8980 S10810-11 Front-illuminated FFT-CCDs for X-ray imaging The S8980 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S8980 has 1.5 mega (1500 x 1000) pixels, each of which is 20 x 20 m in size. The FOP (fiber optic plate) used as an input window is as thin as 1.5 mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). The S10810-11 is an easy-to-use X-ray imaging module using the S8980, with added functions such as a cable assembly and X-ray trigger circuit. Features Applications X-ray monitoring photodiode incorporated Intra-oral X-ray imaging in dental diagnosis Compact size General X-ray imaging High dynamic range: 12-bit Non-destructive inspection Long-term stability Resolution: 20 Lp/mm These products are components for incorporation into medical device. 1500 (H) x 1000 (V) pixel format Pixel size: 20 x 20 m Coupled with FOS for X-ray imaging 100% fill factor Low dark signal Low readout noise MPP operation AC/DC X-ray source adapted Structure Parameter CCD structure Fill factor Cooling Number of pixels Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Dimensions Window S8980 S10810-11 Full frame transfer 100% Non-cooled 1508 (H) x 1002 (V) 1500 (H) x 1000 (V) 20 (H) x 20 (V) m 30 (H) x 20 (V) mm 2 phases 2 phases Emitter follower without load resistor 35.5 (H) x 23.2 (V) mm 41.0 (H) x 26.4 (V) mm FOS (scintillator on 1.5 mm FOP) www.hamamatsu.com 1 CCD area image sensors S8980, S10810-11 Absolute maximum ratings (Ta=25 C) Parameter Storage temperature Operating temperature Total dose irradiation OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Vcc voltage Symbol Tstg Topr D VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Vcc Min. -20 0 -0.5 -0.5 -15 -15 -15 -15 -15 -15 0 Typ. - Max. +70 +40 50 +20 +18 +15 +15 +15 +15 +15 +15 +7 Unit C C Gy V V V V V V V V V Min. 12 12 -0.5 0 -9 0 -9 0 -9 0 -9 0 -9 4.75 Typ. 15 13 2 0 3 -8 3 -8 3 -8 3 -8 3 -8 5 Max. 14 5 6 -7 6 -7 6 -7 6 -7 6 -7 5.25 Unit V V V V V V V V V V V V V V V Min. 0.99995 5 - Typ. 1 60000 350 550 20 220 20 220 250 450 0.99998 8 500 75 1 2 Max. 11 - Unit MHz pF Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low +5 V power supply voltage Symbol VOD VRD VOG Vss VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VsGH VsGL VRGH VRGL VTGH VTGL Vcc Electrical characteristics (Ta=25 C) Parameter Signal output frequency*1 Vertical shift register capacitance S8980 Horizontal shift register capacitance S10810-11 S8980 Summing gate capacitance S10810-11 S8980 Reset gate capacitance S10810-11 S8980 Transfer gate capacitance S10810-11 Charge transfer efficiency*2 DC output level*3 Output impedance*3 Power dissipation*3 *4 S8980 +5 V power supply current S10810-11 *1: *2: *3: *4: Symbol fc CP1v, CP2v CP1H, CP2H CsG CRG CTG CTE VOut Zo P Icc pF pF pF pF V mW mA In case the of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length. Measured at half of the full well capacity. CTE is defined per pixel. VOD=15 V Power dissipation of the on-chip amplifier 2 CCD area image sensors S8980, S10810-11 Electrical and optical characteristics (Ta=25 C, VOD=15 V, unless otherwise noted) Parameter Vertical Horizontal Full well capacity Summing CCD node sensitivity*5 Dark current (MPP mode)*6 Ta=25 C Readout noise*7 Ta=-40 C Dynamic range*8 X-ray response non-uniformity*9 *10 White spots Point 12 defects* Black spots Blemish*11 Cluster defects*13 Column defects*14 X-ray resolution*9 Symbol Min. 100 1.0 15 Fw Sv DS Nr DR XRNU R Typ. 200 300 600 1.4 250 90 60 3333 10 20 Max. 2500 30 20 20 3 1 - Unit keV/ee-/pixel/s e- rms % Lp/mm *5: VOD=15 V, RL (load resistor of emitter follower)=1 k *6: Dark signal doubles for every 5 to 7 C. *7: Operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity *10: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position *11: Refer to "Characteristics and use of FFT-CCD area image sensor" of technical information. *12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s) Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity *13: Continuous 2 to 9 point defects *14: Continuous 10 point defects Resolution (S10810-11) Response (S10810-11) (X-ray source: 70 kVp, Filter: ABS 1.5 mmt) 1.0 (X-ray source: 70 kVp, Filter: ABS 1.5 mmt) 300 0.9 Output voltage (mV) 0.8 0.7 CTF 0.6 0.5 0.4 0.3 200 100 0.2 0.1 0 0 0 2 4 6 8 10 12 14 16 18 20 Spatial frequency (line pairs/mm) 0 100 200 300 Absorbed dose (Gy) KMPDB0355EA KMPDB0356EA 3 CCD area image sensors S8980, S10810-11 ...... OS OD RD S1499 1496 1497 S1500 1498 S1501 S1502 1499 1500 S1503 S1504 D3 VS1 VS2 VS3 VS4 D4 1 2 3 ...... 998 999 1000 2 3 ...... D1 D2 S1 S2 S3 S4 S5 S6 P1V' P2V' TG' SS VS999 VS1001 VS1000 VS1002 Device structure RG' OG SG' P1H' P2H' X-ray irradiation monitoring photodiode PD KMPDC0163EA Pixel format Left Horizontal direction Right Blank 2 Optical black 2 Isolation Effective Isolation 1 1500 1 Optical black 0 Blank 2 Top Vertical direction Bottom Isolation Effective Isolation 1 1000 1 4 CCD area image sensors S8980, S10810-11 On-board circuit OD 51 k 7.5 k P1V P2V TG P1H P2H SG RG OD P1V' 10 10 0.1 OG P2V' 10 2.2 RD TG' RD 2.2 Molex 52745-1497 CCD chip P1H' 10 10 OS P2H' 10 Vcc SG' 100 SS GND Trigger B (S10810-11) PD RG' Trigger A (S8980) 10 k OUT Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 KMPDC0348EB 5 CCD area image sensors S8980, S10810-11 Timing chart Pre-integration period Integration period Readout period AC X-ray exposure (Trigger A)*1 DC X-ray exposure (Trigger A)*1 Trigger B (S10810-11)*2 Tpwv P1V VD: Vertical dummy VD1 1 2, 3, ... , 999, 1000, VD2 P2V, TG*3 P1H P2H, SG RG OUT Tovr P2V, TG Enlarged view Tpwh, Tpws P1H P2H, SG Tpwr RG S2, S3, S4, ... , S1502, S1503, S1504 OUT D1 D2 S1 D3 D4 *1: Trigger A (S8980) is the same as AC/DC X-ray exposure form. *2: Low active trigger pulse *3: TG terminal can be short-circuited to P2V terminal. KMPDC03 KMPDC0349EB P1V, P2V, TG P1H, P2H SG RG TG-P1H Parameter Pulse width*15 Rise and fall times Pulse width Rise and fall times*15 Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol tpwv tprv, tpfv tpwh tprh, tpfh tpws tprs, tpfs tpwr tprr, tpfr tovr Min. 30 200 100 5 100 3 10 3 18 Typ. 60 500 50 500 50 50 36 Max. - Unit s ns ns ns % ns ns % ns ns s *15: The clock pulses should be overlapped at 50% of maximum amplitude. 6 CCD area image sensors S8980, S10810-11 Dimensional outlines (unit: mm) S8980 35.5 30 20 23.2 1 14 Scintillator Molex 52745-1497 6.55 3.6 Active area Connector FOP 19.5 Alumina substrate 2.0 1.0 1.5 3.1 FOS 1.7 CCD chip KMPDA0169EE S10810-11 Entire view MDR connector (3M 10136-3000PE; 36 terminals) CCD sensor Ferrite Cable 2000 Pin no. 1 2 17 18 19 20 35 36 Shroud KMPDA0244EA * The shield of cable and the shroud of MDR connector are short-circuited. Take due care of EMC and ESD when connected to 0 V reference and the ground. 7 CCD area image sensors S8980, S10810-11 26.4 CCD sensor 41.0 20 5.3 9.4 3.5 Cable 6.85 30 Active area KMPDA0245EB Pin connections S8980 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V Description Analog power +5 V Trigger A output Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Remark Should be opened Reset gate Reset drain Output transistor drain Signal output Ground Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 8 CCD area image sensors S8980, S10810-11 S10810-11 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol GND Vcc SG Trigger B RG NC Reserve NC RD NC OD NC OUT NC GND NC P1V Reserve Reserve P2H NC P1H NC GND NC RD NC OD NC GND NC OUT NC P2V NC TG Description Ground +5 V power supply Summing gate Trigger B output Reset gate Remark Same timing as P2H Should be opened Reset drain Output transistor drain Sensor output Ground CCD vertical register clock-1 Should be opened Should be opened CCD horizontal register clock-2 CCD horizontal register clock-1 Ground Reset drain Output transistor drain Ground Sensor output CCD vertical register clock-2 Transfer gate Same timing as P2V 9 CCD area image sensors S8980, S10810-11 Precautions Electrostatic countermeasures * Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Notice * This product is warranted for a period of 12 months after the date of the shipment. The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifications and any use not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period. Information described in this material is current as of June, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1123E05 Jun. 2013 DN 10