2www.irf.com
AUIRGP4062D/P4062D-E
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600——V
VGE = 0V, IC = 100μA
f
CT6
ΔV(BR)CES/ΔTJTemperature Coeff. of Breakdown Voltage —0.30—V/°C
VGE = 0V, IC = 1mA (25°C-175°C) CT6
—1.601.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11
—2.04— IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700μA9, 10,
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12
gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 2.0 25 μAVGE = 0V, VCE = 600V
—775— VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8
—1.28— IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 50 75 IC = 24A 24
Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V
Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4
Eoff Turn-Off Switching Loss — 600 700 μJRG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4
trRise time — 22 31 ns RG = 10
, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 104 115
tfFall time — 29 41
Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15
Eoff Turn-Off Switching Loss — 840 — μJRG=10
, L= 200μH, LS=150nH, TJ = 175°C
f
CT4
Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2
td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16
trRise time — 24 — ns RG = 10Ω, L = 200μH, LS = 150nH CT4
td(off) Turn-Off delay time — 125 — TJ = 175°C WF1
tfFall time — 39 — WF2
Cies Input Capacitance — 1490 — pF VGE = 0V 23
Coes Output Capacitance — 129 — VCC = 30V
Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz
TJ = 175°C, IC = 96A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V 22, CT3
Rg = 10Ω, VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 621 — μJTJ = 175°C 17, 18, 19
trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21
Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10
, L =200μH, Ls = 150nH WF3
Conditions