2N6804 Qualified Levels: JAN, JANTX, and JANTXV P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/562 DESCRIPTION This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. TO-204AA (TO-3) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N6804 number series. * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/562. * RoHS compliant version available (commercial grade only). (See part nomenclature for all available options.) APPLICATIONS / BENEFITS * * Low-profile metal can design. Military and other high-reliability applications. MAXIMUM RATINGS @ T A = +25 C unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 C @ T C = +25 C Drain-Source Voltage, dc Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 C (2) Drain Current, dc @ T C = +100 C (3) Off-State Current (Peak Total Value) Source Current NOTES: 1. 2. 3. (1) Symbol Value T J & T stg R JC V DS V GS I D1 I D2 I DM -55 to +150 1.67 4 75 -100 20 -11.0 -7.0 -50 IS -11 PT Unit o C C/W W V V A A A Derated linearly by 0.6 W/C for T C > +25 C. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may be limited by pin diameter: MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 I DM = 4 x I D1 as calculated in note 2. Website: www.microsemi.com T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 1 of 7 2N6804 MECHANICAL and PACKAGING * * * * * CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: Manufacturer's ID, part number, date code, ESD symbol. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6804 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 2 of 7 2N6804 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 mA Gate-Source Voltage (Threshold) V DS V GS , I D = -0.25 mA V DS V GS , I D = -0.25 mA, T J = +125 C V DS V GS , I D = -0.25 mA, T J = -55 C Gate Current V GS = 20 V, V DS = 0 V V GS = 20 V, V DS = 0 V, T J = +125 C Symbol Min. V (BR)DSS -100 V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Max. Unit V -4.0 V -5.0 I GSS1 I GSS2 100 200 nA Drain Current V GS = 0 V, V DS = -80 V I DSS1 -25 A Drain Current V GS = 0 V, V DS = -80 V, T J = +125 C I DSS2 0.25 mA r DS(on)1 0.30 r DS(on)2 0.36 r DS(on)3 0.55 V SD -4.7 V Max. Unit Q g(on) 29.0 nC Q gs 7.1 nC Q gd 21.0 nC Static Drain-Source On-State Resistance V GS = -10 V, I D = -7 A pulsed Static Drain-Source On-State Resistance V GS = -10 V, I D = -11 A pulsed Static Drain-Source On-State Resistance T J = +125C V GS = -10 V, I D = -7 A pulsed Diode Forward Voltage V GS = 0 V, I S = -11.0 A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = -10 V, I D = -11 A, V DS = -50 V Gate to Source Charge V GS = -10 V, I D = -11 A, V DS = -50 V Gate to Drain Charge V GS = -10 V, I D = -11 A, V DS = -50 V T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Symbol Min. Page 3 of 7 2N6804 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V t d(on) 60 ns Rinse time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V tr 140 ns Turn-off delay time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V t d(off) 140 ns Fall time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V tf 140 ns Diode Reverse Recovery Time di/dt 100 A/s, V DD -50 V, I F = -11 A t rr 250 ns T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 4 of 7 2N6804 Thermal Response (ZJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) ID DRAIN CURRENT (AMPERES) FIGURE 1 Transient Thermal impedance T C , CASE TEMPERATURE (C) FIGURE 2 Maximum Drain Current vs Case Temperature T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 5 of 7 2N6804 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 Safe Operating Area T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 6 of 7 2N6804 PACKAGE DIMENSIONS NOTE: INCHES DIM 1. Dimensions are in inches. MIN MAX 2. Millimeters are given for general information only. A .875 3. These dimensions should be measured at points .050 B .060 .135 inch (1.27 mm) and .055 inch (1.40 mm) below C .250 .360 seating plane. When gauge is not used measurement D .312 .500 will be made at the seating plane. D2 .050 4. The seating plane of the header shall be flat within E .038 .043 .001 inch (0.03 mm) concave to .004 inch (0.10 mm) F .131 .188 G 1.177 1.197 convex inside a .930 inch (23.62 mm) diameter circle H .655 .675 on the center of the header and flat within .001 inch J .205 .225 (0.03 mm) concave to .006 inch (0.15 mm) convex K .420 .440 overall. L .495 .525 5. Mounting holes shall be deburred on the seating M .151 .161 plane side. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. MILLIMETERS MIN MAX 22.23 1.52 3.43 6.35 9.15 7.92 12.70 1.27 0.97 1.10 3.33 4.78 29.90 30.40 16.64 17.15 5.21 5.72 10.67 11.18 12.57 13.34 3.84 4.09 NOTES 3 DIA. Radius 3 3 Radius DIA. SCHEMATIC T4-LDS-0113, Rev. 3 (121514) (c)2012 Microsemi Corporation Page 7 of 7