T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 1 of 7
2N6804
Availa ble on
commercial
versions
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability
applications. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
TO-204AA (TO-3)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6804 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/562.
(See part nomenclature for all available options.)
• RoHS compliant version available (commercial grade only).
APPLICATIONS / BENEFITS
• Low-profile metal can design.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
1.67
oC/W
Total Power Dissipation
A
(1)
PT
4
75
W
Drain-Source Voltage, dc
V
DS
-100
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ TC = +25 ºC (2)
ID1
-11.0
A
Drain Current, dc @ TC = +100 ºC (2)
ID2
-7.0
A
Off-State Current (Peak Total Value) (3)
IDM
-50
Ω
Source Current
IS -11 A
NOTES: 1. Derated linearly by 0.6 W/ºC for TC > +25 ºC.
2. The foll owing form ul a derives the maximum theoret ical ID limit. ID is limited by package and internal
wires and may be l imited by pin diameter:
3. IDM = 4 x ID1 as calculated in note 2.
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2N6804
MECHANICAL and PACKAGING
• CASE: TO-3 metal can.
• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoH S com pli ant mat te-tin plating is also available.
• MARKING: Manufacturer’s ID, part number, date cod e, ESD symbol.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6804 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
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2N6804
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = -1.0 mA
V(BR)DSS -100 V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25 mA
VDS ≥ VGS, ID = -0.25 m A, TJ = +125 °C
V
DS
≥ V
GS
, I
D
= -0.25 mA, T
J
= -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = -80 V
IDSS1
-25
µA
Drain Current
V
GS
= 0 V, V
DS
= -80 V, T
J
= +125 °C
I
DSS2
0.25
mA
Static Drain-Source On-State Resistance
VGS = -10 V, ID = -7 A pulsed
rDS(on)1
0.30
Ω
Static Drain-Source On-State Resistance
V
GS
= -10 V, I
D
= -11 A pulsed
r
DS(on)2
0.36
Ω
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = -10 V, ID = -7 A pulsed
rDS(on)3
0.55
Ω
Diode Forward Voltage
V
GS
= 0 V, I
S
= -11.0 A pulsed
V
SD
-4.7
V
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = -10 V, ID = -11 A, VDS = -50 V
Qg(on) 29.0 nC
Gate to Source Charge
VGS = -10 V, ID = -11 A, VDS = -50 V
Qgs
7.1 nC
Gate to Drain Charge
VGS = -10 V, ID = -11 A, VDS = -50 V Qgd
21.0 nC
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2N6804
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTI CS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = -11 A, VGS = -10 V, RG = 7.5 Ω, VDD = -35 V
td(on)
60
ns
Rinse time
ID = -11 A, VGS = -10 V, RG = 7.5 Ω, VDD = -35 V
tr
140
ns
Turn-off delay time
ID = -11 A, VGS = -10 V, RG = 7.5 Ω, VDD = -35 V
td(off)
140
ns
Fall time
ID = -11 A, VGS = -10 V, RG = 7.5 Ω, VDD = -35 V
tf
140
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ -50 V, IF = -11 A
trr
250
ns
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2N6804
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Transient Thermal impedance
TC, CASE TEMPERATURE (°C)
FIGURE 2
Maximum Drain Current vs Case Temperature
Thermal Response (ZӨJC)
I
D
DRAIN CURRENT (AMPERES)
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2N6804
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3
Safe Operating Area
ID DRAIN CURRENT (AMPERES)
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2N6804
PACKAGE DIMENSIONS
NOTE:
1. Dim ens ions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050
inch (1.27 mm) and .055 inch (1.40 mm) below
seating plane. When gauge is not used measurement
will be made at the seating plane.
4. The seating plane of the header shall be flat within
.001 inch (0.03 mm) concave to .004 inch (0.10 mm)
convex inside a .930 inch (23.62 mm) diameter circle
on the center of the header and flat within .001 inch
(0.03 mm) concave to .006 inch (0.15 mm) convex
overall.
5. Mounting holes shall be deburred on the seating
plane side.
6. Drain is electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
SCHEMATIC
DIM
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
-
.875
-
22.23
B
.060
.135
1.52
3.43
C
.250
.360
6.35
9.15
3
D
.312
.500
7.92
12.70
D2
-
.050
-
1.27
E
.038
.043
0.97
1.10
DIA.
F
.131
.188
3.33
4.78
Radius
G
1.177
1.197
29.90
30.40
H
.655
.675
16.64
17.15
J
.205
.225
5.21
5.72
3
K
.420
.440
10.67
11.18
3
L
.495
.525
12.57
13.34
Radius
M
.151
.161
3.84
4.09
DIA.