HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13003H Characteristic/features High breakdown voltage High current capability High switching speed High reliability Application Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit Description 3DD13003H is a silicon npn power transistor. The main process include high voltage planer process,triple difussion process and multi-surface passivation Absolute maximum ratings (Tc=25) ITEM SYMBOL RATING UNITS Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current Ic 1.2 A Collector dissipation Pc 20 W Junction temperature Tj 150 Junction temperature Tstg -55~+150 2005.02 1/6 D13003H Electrical charactristics (Tc=25) Item Symbol Testing term Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 Collector-base breakdown voltage V(BR)CBO Ic=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=1mA,Ic=0 Collector-base Cutoff current ICBO VCB=580V, IE=0 Collector-emitter Cutoff current ICEO VCE=390V,IB=0 Emitter-base Cutoff current IEBO VEB=7V, IC=0 DC current gain hFE VCE=10V, Collector-emitter Saturation voltage VCE(sat)(1) IC=0.5A, IB=0.1A Base-emitter Saturation voltage VBE(sat) IC=0.5A, IB=0.1A Fall time tf Storage time Transition frequency IC=100mA Min Max Units 400 V 600 V 9 V 8 5 A 10 A 5 A 40 0.8 V 1.2 V VCC=24V IC=0.25A, IB1=-IB2=0.05A 0.7 S ts VCC=24V IC=0.25A, IB1=-IB2=0.05A 4 S fT VCE=10V, Ic=0.1A 4 - MHz Min Max Units 6.25 /W Thermal charactristics Item Thermal resistance Junction to case Symbol Rth(j-c) 2005.02 2/6 D13003H Typical characteristics: Base-emitter saturation voltage 2005.02 3/6 D13003H Unitsmm 2005.02 4/6 D13003H NOTES 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Please do not exceed the absolute maximum ratings of the device when circuit designing. 5. Jilin Sino-microelectronics co, Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT Jilin Sino-Microelectronics Co.,Ltd AddNo.99 Shenzhen Street,Jilin City Jilin Province China Zip132013 Tel864324678411 Fax04324665812 Webwww.hwdz.com.cn Marking Department Jilin City: AddNo.99 Shenzhen Street,Jilin City Jilin Provine China Tel: 04324675588 4675688 (0432)4678411-30983099 Fax: 04324671533 2005.02 5/6