HIGH V OLTAGE FAST-SWITCHING
NPN POWER TRANSISTER
D13003H
Characteristic/features
◆High breakdown voltage
◆High current capability
◆High switching speed
◆High reliability
Application
◆Energy-saving light
◆Electronic ballasts
◆High frequency switching power supply
◆High frequency power transform
◆Commonly power amplifier circuit
Description
3DD13003H is a silicon npn power transistor.
The main process include high voltage planer
process,triple difussion process and multi-surface
passivation
Absolute maximum ratings (Tc=25℃)
ITEM SYMBOL RATING UNITS
Collector-base voltage VCBO 600 V
Collector-emitter voltage VCEO 400 V
Emitter-base voltage VEBO 9 V
Collector current Ic 1.2 A
Collector dissipation Pc 20 W
Junction temperature Tj 150 ℃
Junction temperature Tstg -55~+150 ℃
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Electrical charactristics (Tc=25℃)
Item Symbol Testing term Min Max Units
Collector-emitter
breakdown voltage V(BR)CEO Ic=10mA,IB=0 400 V
Collector-base
breakdown voltage V(BR)CBO Ic=1mA,IB=0 600 V
Emitter-base
breakdown voltage V(BR)EBO IE=1mA,Ic=0 9 V
Collector-base
Cutoff current ICBO VCB=580V, IE=0 5 μA
Collector-emitter
Cutoff current ICEO VCE=390V,IB=0 10 μA
Emitter-base
Cutoff current IEBO VEB=7V, IC=0 5 μA
DC current gain hFE VCE=10V, IC=100mA 8 40
Collector-emitter
Saturation voltage VCE(sat)(1) IC=0.5A, IB=0.1A 0.8 V
Base-emitter
Saturation voltage VBE(sat) IC=0.5A, IB=0.1A 1.2 V
Fall time tf VCC=24V IC=0.25A,
IB1=-IB2=0.05A 0.7 μS
Storage time ts VCC=24V IC=0.25A,
IB1=-IB2=0.05A 4 μS
Transition frequency fT VCE=10V, Ic=0.1A 4 - MHz
Thermal charactristics
Item Symbol Min Max Units
Thermal resistance
Junction to case Rth(j-c) 6.25 ℃/W
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Typical characteristics:
Base-emitter saturation voltage
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Units：mm
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NOTES
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales
agent , thus, for customers, when ordering , please check with our company.
2. We strongly recommend customers check carefully on the trademark when buying our
product, if there is any question, please don’t be hesitate to contact us.
3. Please do not exceed the absolute maximum ratings of the device when circuit
designing.
4. Please do not exceed the absolute maximum ratings of the device when circuit
designing.
5. Jilin Sino-microelectronics co, Ltd reserves the right to make changes in this
specification sheet and is subject to change without prior notice.
CONTACT
Jilin Sino-Microelectronics Co.,Ltd
Add：No.99 Shenzhen Street,Jilin City Jilin Province China
Zip：132013
Tel：86－432－4678411
Fax：（0432）4665812
Web：www.hwdz.com.cn
Marking Department
Jilin City:
Add：No.99 Shenzhen Street,Jilin City Jilin Provine China
Tel: （0432）4675588 4675688 (0432)4678411-3098＼3099
Fax: （0432）4671533
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