5
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)GSS Gat e-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = - 15 V, V DS = 0
VGS = - 15 V, VDS = 0, TA =
125°C
- 1.0
- 1.0 nA
µA
VGS(off) Gate-Source Cutoff Voltage VDS = 10 V, I D = 1. 0 nA 309
310 - 1.0
- 2.0 - 4.0
- 6.5 V
V
ON CHARACTERISTICS
IDSS Zero-Gate V olt age Drain
Current* VDS = 10 V, V GS = 0 309
310 12
24 30
60 mA
mA
VGS(f)Gate-Source Fo rward Voltage VDS = 0, IG = 1.0 mA 1.0 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Re(yis) Common-Source Input
Conductance VDS = 10, ID = 10 mA, f = 100 MHz
309
310 0.7
0.5 mmhos
mmhos
Re(yos) Common-Source Output
Conductance VDS = 10, ID = 10 mA, f = 100 MHz 0.25 mmhos
Gpg Common-Gate Power Gain VDS = 10, ID = 10 m A , f = 100 MHz 16 dB
Re(yfs) Common-Source Forward
Transconductance VDS = 10, ID = 10 mA, f = 100 MHz 12 mmhos
Re(yig) Common-Gate Input Conductance VDS = 10, ID = 10 m A, f = 100 MHz 12 mmhos
gfs Common-Source Forward
Transconductance VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310 10,000
8000 20,000
18,000
mhos
mhos
goss Common-Source Output
Conductance VDS = 10, ID = 10 mA, f = 1.0 k Hz 150
mhos
gfg Common-Gate Forward
Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310 13,000
12,000
mhos
mhos
gog Common-Gate Output
Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310 100
150
mhos
mhos
Cdg Drain-Gate Capacitanc e VDS = 0, VGS = - 10 V, f = 1.0 MHz 2. 0 2.5 pF
Csg Source-Gate Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 4. 1 5.0 pF
NF Noise Figure VDS = 10 V, ID = 10 mA,
f = 450 MHz 3.0 dB
enEquivalent Short -Circuit Input
Noise Voltage VDS = 10 V, ID = 10 m A,
f = 100 Hz 6.0
N-Channel RF Amplifier
(continued)
nV/√Hz
J309 / J310 / MMBFJ309 / MMBFJ310