1White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI7F33512C
May 2001 Rev. 4
ECO #14122
EDI7F33512C-BNC: 512Kx32 80 PIN SIMM
512Kx32, 2x512Kx32 and 4x512Kx32 Densities
Based on AMDs - AM290F040 Flash Device
Fast Read Access Time - 80-150ns
5- Volt-Only Reprogramming
Sector Erase Architecture
Uniform sectors of 64 Kbytes each
Any combination of sectors can be erased
Also supports full chip erase
Sector Protection
Hardware method that disables any combination of sectors
from write or erase operations
Embedded Erase Algorithms
Automatically preprograms and erases the chip or any com-
bination of sectors
Embedded Program Algorithms
Automatically programs and verifies data at specified ad-
dress
Data Polling and Toggle Bit feature for detection of program or
erase cycle completion
Low Power Dissipation
40mA per Device Active Current
10µA per Device CMOS Standby Current
Typical Endurance >100,000 Cycles
Single 5 Volt ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Range
Package
80 Pin SIMM (JEDEC)
The EDI7F33512, EDI7F233512 and EDI7F433512 are organized
as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The
modules are based on AMD's AM29F040 - 512Kx8 Flash Device
in TSOP packages which are mounted on an FR4 substrate.
The modules offer access times between 80 and 150ns allowing
for operation of high-speed microprocessors without wait states.
BLOCK DIAGRAMS
EDI7F433512C-BNC: 4x512Kx32 80 PIN SIMM
EDI7F233512C-BNC: 2x512Kx32 80 PIN SIMM
512Kx32 Flash
DESCRIPTION
FEATURES
FIG. 1
512K
X 8 DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
512K
512K
512K
512K 512K
512K
512K
X 8
X 8
X 8
X 8
X 8
X 8 X 8
G\
W1\
W2\
W3\
A0-A18
E1\
E0\
W0\
512K
X 8 DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
EØ\
G
W0
W1
W2
W3
512K
512K
512K
X 8
X 8
X 8
\
\
\
\
\
A0-A18
A0-A18
G\
W1\
W2\
W3\
X8
512K
X8
512K
X8
512K
X8
512K
DQ0-DQ7
X8
512K
X8
512K
X8
512K
X8
512K
X8
512K
X8
512K
X8
512K
X8
512K
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
X8
512K
X8
512K
X8
512K
X8
512K
E3\
E2\
E1\
E0\
W0\