IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
©1996 IXYS Corporation. All rights reserved.
Features
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Typical Applications
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Phase Control ThyristorPhase Control Thyristor
Phase Control ThyristorPhase Control Thyristor
Phase Control Thyristor
CSCSCSCSCS 1011 1011 1011 1011 1011 IIIIITRMS = 2300 A
ITAVM = 1000 A
VRRM = 1800 - 2500
V
Symbol Test Conditions Maximum Ratings
ITRMS 2300 A
ITAVM TC = 82°C; 180° sine 1000 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 19800 A
VR = 0 t = 8.3 ms(60 Hz), sine 21000 A
TVJ = TVJM t = 10 ms (50 Hz), sine 18000 A
VR = 0 t = 8.3 ms(60 Hz), sine 20000 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 1960000 A2s
VR = 0 t = 8.3 ms(60 Hz), sine 1830000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1620000 A2s
VR = 0 t = 8.3 ms(60 Hz), sine 1660000 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 2500 A 320 A/µs
f = 5 Hz, tP =200 ms
VD = 1/2 VDRM
IG = 2 A
diG/dt = 2 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 120 W
IT = ITAVM tP = 500 µs60W
t
P
= 10 ms 16 W
VRGM 5V
T
VJ -40...+125 °C
TVJM 125 °C
Tstg -40...+ 50 °C
MdMounting force 24 ... 28 kN
Weight 600 g
12
4
VRSM VRRM Type
VDSM VDRM
VV
1800 1800 CS 1011 - 18io1
2200 2200 CS 1011 - 22io1
2500 2500 CS 1011 - 25io1
3
3
4
1
2
Data according to DIN/IEC 747-6
IXYS reserves the right to change limits, test conditions and dimensions
IXYS reserves the right to change limits, test conditions, and dimensions.
CS 1011
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM ≤60 mA
VTIT= 3.14 ITAVM ;TVJ = 25°C≤2.1 V
VT0 For power-loss calculations only (TVJ = 125 °C) 1.2 V
rT0.32 mΩ
VGT VD = 12 V; TVJ = 25°C≤3.0 V
IGT VD = 12 V; TVJ = 25°C≤300 mA
VGD TVJ = T VJM;V
D
= 2/3 VDRM ≤0.25 V
ILTVJ = 25°C; tP = 10 µs≤1.0 A
IG = 2 A; diG/dt = 2 A/µs
IHTVJ = 25°C; VD = 12 V; RGK = ∞≤0.3 A
tgd TVJ = 25°C; VD = 500 V ≤2.5 µs
IG = 2 A; diG/dt = 2 A/µs
tqTVJ = TVJM; IT = 1000 A, tP = 200 µs; di/dt = -10 A/µs typ. 150 µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
RthJC 0.02 K/W
