CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT(RMS) = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies International standard package JEDEC TO-208AA Planar glassivated chip Long-term stability of blocking currents and voltages ITSM I2t (di/dt)cr TVJ = TVJM Tcase = 85C; 180 sine Tcase = 69C; 180 sine 50 25 32 A A A TVJ = 45C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 480 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 430 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1010 970 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 770 A2s A2s TVJ = TVJM repetitive, IT = 75 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = IT(AV)M diG/dt = 0.3 A/ms 150 A/ms 500 A/ms 1000 V/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms PG(AV) 10 5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 C C C Md Mounting torque 2.7-3.3 24-29 Weight 12 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions Applications Motor control Power converter AC power controller Advantages Space and weight savings Simple mounting Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Nm lb.in. g 740 IT(RMS) IT(AV)M 1-3 (c) 2000 IXYS All rights reserved http://store.iiic.cc/ CS 23 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM 3 VT IT 1.8 V VT0 rT For power-loss calculations only (TVJ = 125C) 1.0 10 V mW VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 80 A; TVJ = 25C mA TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2.5 3.5 50 80 V V mA mA VD = 2/3 VDRM 0.2 1 V mA TVJ = 25C; tP = 10 ms IG = 0.15 A; diG/dt = 0.15 A/ms 200 mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.15 A; diG/dt = 0.15 A/ms 2 ms tq TVJ = TVJM; IT = 25 A, tP = 300 ms; di/dt = -20 A/ms VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM typ. 60 ms RthJC RthJH DC current DC current 1.0 K/W 1.61 K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.5 1.5 50 mm mm m/s2 Accessories: Nut M6 DIN 439/SW14 Lock washer A6 DIN 128 102 4 V ms C tgd IT 101 IGT: TVJ= -40C IGT: TVJ= 0C B lim. 100 B 2 typ. A TVJ= 125C TVJ= 25C B 3 IGT: TVJ= 25C VG 120 80 60 lim. 100 40 1 typ. 20 A IGD: TVJ= 25C IGD: TVJ=125C 0 0 25 50 75 mA 100 10-1 10-2 10-1 t IG Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe A 101 100 Fig. 2 Gate controlled delay time tgd 0 0.0 0.5 1.0 1.5 2.0 V 2.5 VT Fig. 3 On-state characteristics 2-3 (c) 2000 IXYS All rights reserved http://store.iiic.cc/ CS 23 1000 500 40 VR = 0 V 2 800 A s A 50Hz, 80%VRRM 400 ITSM A TVJ = 45C 600 TVJ = 45C TVJ = 125C 30 IT(AV)M I2t TVJ = 125C 400 300 20 200 200 10 100 0 10-3 0 100 10-2 10-1 100 s 101 1 2 3 5 6 7 ms 8 910 t 4 t Fig. 5 I2t versus time (1-10 ms) Fig. 4 Surge overload current ITSM: crest value, t: duration 0 50 100 C 150 Tcase Fig. 6 Maximum forward current at case temperature 180 sine 80 W RthJA : 1.9 K/W 60 PT 2.3 K/W 2.7 K/W 40 2.7 K/W DC 180 sin 120 60 30 20 4.3 K/W 6.1 K/W 0 0 10 20 30 40 50 A IT(AV)M 0 60 50 100 C 150 Tamb Fig. 7 Power dissipation versus on-state current and ambient temperature RthJH for various conduction angles d: K/W d RthJH (K/W) DC 180 120 60 30 1.61 1.85 2.03 2.35 2.60 d = 30 d = 60 d = 120 2 ZthJH d = 180 d = DC Constants for ZthJH calculation: i 1 0 10-3 1 2 3 4 5 6 10-2 10-1 100 101 102 103 s t Rthi (K/W) 0.224 0.132 0.321 0.522 0.249 0.162 ti (s) 0.003 0.028 0.216 1.1 4.2 43.2 104 Fig. 8 Transient thermal impedance junction to heatsink 3-3 (c) 2000 IXYS All rights reserved http://store.iiic.cc/