For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Functional Diagram
Features
P1dB Output Power: +24.5 dBm
Psat Output Power: +27.5 dBm
High Gain: 21 dB
Output IP3: +35 dBm
Supply Voltage: Vdd = +6V @ 500 mA
50 Ohm Matched Input/Output
Die Size: 2.76 x 1.6 x 0.1 mm
Typical Applications
The HMC1014 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
General Description
The HMC1014 is a four stage GaAs pHEMT MMIC
Medium Power Amplier die which operates between
33.5 and 46.5 GHz. The amplier provides 21 dB of
gain, +27.5 dBm of saturated output power, and 27%
PAE from a +6V supply. With up to +35 dBm OIP3
the HMC1014 is ideal for high linearity applications in
miltary and space as well as point-to-point and point-
to-multi-point radios. The HMC1014 amplier I/Os are
internally matched facilitating integration into mutli-
chip-modules (MCMs). All data shown herein was
measured with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specications, TA = +25° C, Vdd1 - Vdd8 = +6V, Idd = 500 mA [1]
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 33.5 - 43 43 - 46.5 GHz
Gain 18 21 18 21 dB
Gain Variation Over Temperature 0.029 0.035 dB/ °C
Input Return Loss 25 32 dB
Output Return Loss 18 17 dB
Output Power for 1 dB Compression (P1dB) 22 24.5 21 23.5 dBm
Saturated Output Power (Psat) 27.5 26.5 dBm
Output Third Order Intercept (IP3) [2] 35 34 dBm
Total Supply Current 500 500 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.
[2] Measurement taken at Pout / tone = +15 dBm.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature
Input Return Loss vs. Temperature
P1dB vs Supply Voltage
-50
-40
-30
-20
-10
0
10
20
30
31 33 35 37 39 41 43 45 47 49
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
16
18
20
22
24
26
28
33 35 37 39 41 43 45 47
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
33 35 37 39 41 43 45 47
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
33 35 37 39 41 43 45 47
+25 C
+85 C
-55 C
RESPONSE (dB)
FREQUENCY (GHz)
19
21
23
25
27
29
33 35 37 39 41 43 45 47
+25C
+85C
-55C
FREQUENCY (GHz)
P1dB (dBm)
19
21
23
25
27
29
33 35 37 39 41 43 45 47
5V
5.5V
6V
FREQUENCY (GHz)
P1dB (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Psat vs. Supply Current
Psat vs. Temperature Psat vs. Supply Voltage
Output IP3 vs. Temperature,
Pout/tone = +15 dBm
P1dB vs. Supply Current
Output IP3 vs. Supply Current,
Pout/tone = +15 dBm
19
21
23
25
27
29
33 35 37 39 41 43 45 47
+25 C
+85 C
-55 C
FREQUENCY (GHz)
Psat (dBm)
19
21
23
25
27
29
33 35 37 39 41 43 45 47
5V
5.5V
6V
FREQUENCY (GHz)
Psat (dBm)
19
21
23
25
27
29
33 35 37 39 41 43 45 47
400 mA
450 mA
500 mA
FREQUENCY (GHz)
P1dB (dBm)
19
21
23
25
27
29
33 35 37 39 41 43 45 47
400 mA
450 mA
500 mA
FREQUENCY (GHz)
Psat (dBm)
23
27
31
35
39
43
33 35 37 39 41 43 45 47
+25 C
+85 C
-55 C
FREQUENCY (GHz)
IP3 (dBm)
23
27
31
35
39
43
33 35 37 39 41 43 45 47
400 mA
450 mA
500 mA
FREQUENCY (GHz)
IP3 (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Output IM3 @ Vdd = +6V
Power Compression @ 34 GHz
Output IM3 @ Vdd = +5V
Output IM3 @ Vdd =+5.5V
Output IP3 vs. Supply Voltage,
Pout/tone = +15 dBm
23
27
31
35
39
43
33 35 37 39 41 43 45 47
5V
5.5V
6V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
10 12 14 16 18 20 22 24
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
10 12 14 16 18 20 22 24
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
10 12 14 16 18 20 22 24
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
Pout/TONE (dBm)
IM3 (dBc)
Power Compression @ 40 GHz
0
5
10
15
20
25
30
-9 -6 -3 0 3 6 9 12
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
0
5
10
15
20
25
30
-9 -6 -3 0 3 6 9
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
5
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Gain & Power vs.
Supply Current @ 40 GHz
Power Dissipation
Gain & Power vs.
Supply Voltage @ 40 GHz Reverse Isolation vs. Temperature
Power Compression @ 46 GHz
0
5
10
15
20
25
30
-9 -6 -3 0 3 6 9
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
10
15
20
25
30
35
400 420 440 460 480 500
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
5 5.2 5.5 5.7 6
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
-60
-50
-40
-30
-20
-10
0
33 35 37 39 41 43 45 47
+25C
+85C
-55C
FREQUENCY (GHz)
ISOLATION (dB)
0
1
2
3
4
5
6
-10 -6 -2 2 6 10
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +7 Vdc
RF Input Power (RFIN) +18 dB m
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 48.3 mW/°C above
85 °C)
3.14 W
Thermal Resistance
(channel to die bottom) 20.7 °C/W
Storage Temperature -65 to 150°C
Operating Temperature -55 to 85 °C
Vdd (V) Idd (mA)
+5 500
+5.5 500
+6 500
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
7
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Pin Number Function Description Interface Schematic
1RFIN RF signal input. This pin is AC coupled and matched to 50
Ohms over the operating frequency range.
2, 12 Vgg1, Vgg2
Gate control for amplier. Amplier can be biased by either
Vgg1 or Vgg2. External bypass capacitors of 100 pF,
0.01uF, and 4.7 uF capacitors are required.
3, 4, 5, 6 Vdd1-4
Drain bias voltage for the top half of the amplier. External
bypass capacitors of 100 pF required for each pin, followed
by common 0.01uF and 4.7 uF Capacitors
7RFOUT RF signal output. This pad is AC coupled and matched to
50 Ohms over the operating frequency range.
8, 9, 10, 11 Vdd5-8
Drain bias voltage for the bottom half of the amplier.
External bypass capacitors of 100 pF required for each pin
followed by common 0.01 uF and 4.7 uF capacitors.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pin Descriptions
Application Circuit
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
8
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Assembly Diagram
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Notes:
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D