1165917 High-current complementary silicon transistors. For use output devices in complementary general purpose amplifier applications. Features: * * * (TO-3) High DC current gain - hFE = 1000 (minimum) at IC - 20A dc. Monolithic construction with built-in base emitter shunt resistor. Junction temperature to +200C. Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.480 (12.19) 0.665 (16.89) BSC N - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) U V 30 Ampere Darlington Power Transistors Complementary Silicon 60 - 120 Volts, 200 Watts (TO-3) Case 1-07 Style 1 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165917 Maximum Ratings Rating Symbol Collector-Emitter Voltage MJ11015 VCEO Collector-Base Voltage MJ11015 VCB Value Unit 120 V dc VEB 5 Collector Current IC 30 Base Current IB 1 Total Device Dissipation at TC = 25C Derate above 25C at TC = 100C PD 200 1.15 W W/C TJ, Tstg -55 to +200 C Symbol Maximum Unit RJC 1.17 C/W TL 275 C Emitter-Base Voltage A dc Operating and Storage Junction Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes for 10 Seconds Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Darlington Circuit Schematic PNP MJ11015 http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165917 Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit 120 - V dc ICER - 1 5 Emitter Cut off Current (VBE = 5.0V dc, IC = 0) IEBO - 5 Collector-Emitter Leakage Current (VCE = 5.0V dc, IB = 0) ICEO - 1 hFE 1000 200 - VCE (sat) - 3 4 Off Characteristics Collector-Emitter Brakdown Voltage (1) (lC = 100mA dc, lB = 0) MJ11015 Collector-Emitter Leakage Current (VCE = 120V dc, RBE = 1k) (VCE = 120V dc, RBE = 1k, TC = 150C) MJ11015 MJ11015 V (BR) CEO mA dc On Characteristics (1) DC Current Gain (lC = 20A dc, VCE = 5V dc (lC = 30A dc, VCE = 5V dc) Collector-Emitter Saturation Voltage (lC = 20A dc, IB = 200mA dc) (lC = 30A dc, IB = 300mA dc) Base-Emitter Saturation Voltage (lC = 20A dc, IB = 200mA dc) (lC = 30A dc, IB = 300mA dc) VBE (sat) - 3.5 5 hfe 4 - - V dc Dynamic Characteristics Current-Gain Bandwidth Product (IC = 10A, VCE = 3V dc, f = 1MHz) MHz (1) Pulse Test: Pulse Width = 300S, Duty Cycle 2.0%. hFE, DC Current Gain DC Current Gain (1) IC, Collector Current (Amperes) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165917 "On" Voltage (1) V, Voltage (Volts) hfe, Small-Signal Current Gain (Normalized) Small-Signal Current Gain f, Frequency (kHz) IC, Collector Current (Amperes) Active Region DC Safe Operating Area IC, Collector Current (Amperes) There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. VCE, Collector-Emitter Voltage (Volts) Part Number Table Description Part Number Darlington Transistor, TO-3 MJ11015 Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2008. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 22/10/08 V1.1