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High-current complementary silicon transistors.
For use output devices in complementary general purpose amplifier applications.
Features:
•High DC current gain - hFE = 1000 (minimum) at IC- 20A dc.
•Monolithic construction with built-in base emitter shunt resistor.
•Junction temperature to +200°C.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
30 Ampere Darlington
Power Transistors
Complementary Silicon
60 - 120 Volts, 200 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage MJ11015 VCEO
120
V dcCollector-Base Voltage MJ11015 VCB
Emitter-Base Voltage VEB 5
Collector Current IC30
Adc
Base Current IB1
Total Device Dissipation at TC= 25°C
Derate above 25°C at TC = 100°C PD200
1.15
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +200 °C
Maximum Ratings
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 1.17 °C/W
Maximum Lead Temperature for Soldering Purposes for ≤10 Seconds TL275 °C
Thermal Characteristics
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above
the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
Darlington Circuit Schematic
PNP
MJ11015
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Electrical Characteristics (TC= 25°C unless otherwise noted)
On Characteristics (1)
DC Current Gain
(lC= 20A dc, VCE = 5V dc
(lC= 30A dc, VCE = 5V dc)
hFE 1000
200
-
-
-
Collector-Emitter Saturation Voltage
(lC= 20A dc, IB= 200mA dc)
(lC= 30A dc, IB= 300mA dc)
VCE (sat) - 3
4V dc
Base-Emitter Saturation Voltage
(lC= 20A dc, IB= 200mA dc)
(lC= 30A dc, IB= 300mA dc)
VBE (sat) - 3.5
5
Dynamic Characteristics
Current-Gain Bandwidth Product
(IC= 10A, VCE = 3V dc, f = 1MHz) hfe 4 - MHz
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Brakdown Voltage (1)
(lC = 100mA dc, lB= 0) MJ11015 V (BR) CEO 120 - V dc
Collector-Emitter Leakage Current
(VCE = 120V dc, RBE = 1kΩ) MJ11015
(VCE = 120V dc, RBE = 1kΩ, TC= 150°C) MJ11015
ICER -1
5
mA dc
Emitter Cut off Current
(VBE = 5.0V dc, IC= 0) IEBO - 5
Collector-Emitter Leakage Current
(VCE = 5.0V dc, IB= 0) ICEO - 1
(1) Pulse Test: Pulse Width = 300µS, Duty Cycle ≤2.0%.
IC, Collector Current (Amperes)
DC Current Gain (1)
hFE, DC Current Gain
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hfe, Small-Signal Current Gain
(Normalized)
Small-Signal Current Gain
f, Frequency (kHz)
V, Voltage (Volts)
“On” Voltage (1)
IC, Collector Current (Amperes)
IC, Collector Current (Amperes)
Active Region DC Safe Operating Area
VCE, Collector-Emitter Voltage (Volts)
Part Number Table
Description Part Number
Darlington Transistor, TO-3 MJ11015
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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