SiA468DJ www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a 0.0084 at VGS = 10 V 37.8 0.0114 at VGS = 4.5 V 32.5 Qg (TYP.) 8.2 nC S 4 * 100 % Rg tested * The highest continuous drain current capability in its class * Very low RDS-Qg FOM and Qgd elevate efficiency PowerPAK(R) SC-70-6L Single D 5 * TrenchFET(R) Gen IV power MOSFET D 6 * Increase power density of your design * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 05 2. S 7 m m 1 m 5m 2.0 Top View 3 G Bottom View 2 D 1 D Marking Code: AX D * DC/DC converters and synchronous buck converters - Lower ringing voltage from soft turn-on - High efficiency from fast turn-off G - Lower shoot-through possibility * Battery charging and protection Ordering Information: SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free) * Load switch S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS +20 / -16 TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C Continuous Source-Drain Diode Current 36.3 ID 16.1 a, b 12.9 a, b Maximum Power Dissipation IDM TC = 25 C TA = 25 C 15.8 IS 2.9 a, b 19 TC = 70 C 12 PD W 3.5 a, b 2.2 a, b TA = 70 C Operating Junction and Storage Temperature Range A 70 TC = 25 C TA = 25 C V 37.8 TA = 70 C Pulsed Drain Current (t = 100 s) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak temperature) c, d C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient a, e t5s RthJA 28 36 Maximum Junction-to-Case (Drain) Steady state RthJC 5.3 6.5 UNIT C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 80 C/W. S16-1266-Rev. A, 27-Jun-16 Document Number: 67408 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA468DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 30 - - - V 12.8 - - -4.8 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 A mV/C VGS(th) VDS = VGS, ID = 250 A 1 - 2.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = +20 V / -16 V - - 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 C - - 10 VDS 5 V, VGS = 10 V 10 - - A VGS = 10 V, ID = 11 A - 0.0070 0.0084 VGS = 4.5 V, ID = 7 A - 0.0091 0.0114 VDS = 10 V, ID = 11 A - 35 - - 1290 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 435 - - 30 - VDS = 15 V, VGS = 10 V, ID = 12 A - 17.6 22 - 8.2 16 VDS = 15 V, VGS = 4.5 V, ID = 12 A - 3.1 - - 1.3 - f = 1 MHz 0.28 1.4 2.8 - 8 16 - 22 40 - 18 36 tf - 8 16 td(on) - 12 25 - 30 45 - 15 30 - 13 26 RDS(on) gfs A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD TC = 25 C IS = 10 A - - 12 - - 40 - 0.85 1.2 A V Body Diode Reverse Recovery Time trr - 30 45 ns Body Diode Reverse Recovery Charge Qrr - 20 35 nC Reverse Recovery Fall Time ta - 17 - Reverse Recovery Rise Time tb - 13 - IF = 10 A, dI/dt = 100 A/s, TJ = 25 C ns Notes a. Pulse test; pulse width 100 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1266-Rev. A, 27-Jun-16 Document Number: 67408 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA468DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 10000 10000 80 VGS = 10 V thru4V VGS = 3 V 28 100 2nd line ID - Drain Current (A) 1000 42 1st line 2nd line 2nd line ID - Drain Current (A) 56 TC = 125 C 60 1000 1st line 2nd line 70 40 TC = 25 C TC = -55 C 100 20 14 0 0 10 0 0.5 1 1.5 10 0 2 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 0.02 1500 10000 10000 VGS = 4.5 V 0.01 100 VGS = 10 V 0.005 1000 900 1st line 2nd line 1000 2nd line C - Capacitance (pF) 1200 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance () Ciss Coss 600 100 300 Crss 0 10 0 14 28 42 56 0 10 0 70 6 12 24 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1.6 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 24 V 4 100 2 0 10 0 5 10 15 20 VGS = 10 V, ID= 11 A 1.4 1000 1.2 1.0 100 0.8 VGS = 4.5 V, 7 A 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-1266-Rev. A, 27-Jun-16 10000 1st line 2nd line VDS = 8 V 2nd line RDS(on) - On-Resistance (Normalized) 10000 ID = 12 A 30 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 18 Document Number: 67408 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA468DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 2nd line RDS(on) - On-Resistance () TJ = 150 C 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 1 TJ = 25 C 0.1 100 0.01 0.001 0.025 0.2 0.4 0.6 0.8 1.0 1000 0.02 0.015 TJ = 150 C 0.01 100 TJ = 25 C 0.005 0 10 0 10000 0.03 10000 1st line 2nd line 100 10 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1.7 ID = 250 A 1.5 25 1000 20 Power (W) 1.3 1st line 2nd line 2nd line VGS(th) (V) 30 10000 1.1 100 15 10 0.9 5 0.7 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (C) 2nd line Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title IDM limited 100 10000 10 100 s ID limited 1000 1st line 2nd line 2nd line ID - Drain Current (A) Limited by RDS(on)(1) 1 ms 1 10 ms 100 ms 0.1 100 DC, 10 s, 1 s BVDSS limited TA = 25 C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-1266-Rev. A, 27-Jun-16 Document Number: 67408 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA468DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 10000 42 Package limited 1000 28 1st line 2nd line 2nd line ID - Drain Current (A) 35 21 14 100 7 0 10 0 25 50 75 100 125 150 TC - Case Temperature (C) 2nd line Current Derating a Axis Title 24 2.20 10000 1.76 18 12 Power (W) 1st line 2nd line 2nd line Power (W) 1000 1.32 0.88 100 6 0.44 0 10 0 25 50 75 100 125 TC - Case Temperature (C) 2nd line Power, Junction-to-Case 150 0.00 0 25 50 75 100 125 150 TA - AmbientTemperature(C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ (max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S16-1266-Rev. A, 27-Jun-16 Document Number: 67408 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA468DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67408. S16-1266-Rev. A, 27-Jun-16 Document Number: 67408 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK(R) SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 - Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK(R) SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000