SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 1Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
Marking Code: AX
Ordering Information:
SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• 100 % Rg tested
• The highest continuous drain current capability
in its class
• Very low RDS-Qg FOM and Qgd elevate efficiency
• Increase power density of your design
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters and synchronous
buck converters
- Lower ringing voltage from soft turn-on
- High efficiency from fast turn-off
- Lower shoot-through possibility
• Battery charging and protection
•Load switch
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) () (MAX.) ID (A) aQg (TYP.)
30 0.0084 at VGS = 10 V 37.8 8.2 nC
0.0114 at VGS = 4.5 V 32.5
PowerPAK
®
SC-70-6L Single
3
G
2
D
1
D
S
4
D
5
D
6
Bottom View
2.05 mm
2.05 mm
1
Top View
S
7
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS +20 / -16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
37.8
A
TC = 70 °C 36.3
TA = 25 °C 16.1 a, b
TA = 70 °C 12.9 a, b
Pulsed Drain Current (t = 100 μs) IDM 70
Continuous Source-Drain Diode Current TC = 25 °C IS
15.8
TA = 25 °C 2.9 a, b
Maximum Power Dissipation
TC = 25 °C
PD
19
W
TC = 70 °C 12
TA = 25 °C 3.5 a, b
TA = 70 °C 2.2 a, b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Soldering Recommendations (Peak temperature) c, d 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient a, e t 5 s RthJA 28 36 °C/W
Maximum Junction-to-Case (Drain) Steady state RthJC 5.3 6.5
SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 2Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 100 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V
VDS Temperature Coefficient VDS/TJ ID = 250 μA -12.8-
mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ --4.8-
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 2.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = +20 V / -16 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V - - 1 μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10
On-State Drain Current a ID(on) V
DS 5 V, VGS = 10 V 10 - - A
Drain-Source On-State Resistance a RDS(on)
VGS = 10 V, ID = 11 A - 0.0070 0.0084
VGS = 4.5 V, ID = 7 A - 0.0091 0.0114
Forward Transconductance agfs VDS = 10 V, ID = 11 A - 35 - S
Dynamic b
Input Capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 1290 -
pFOutput Capacitance Coss - 435 -
Reverse Transfer Capacitance Crss -30-
Total Gate Charge Qg
VDS = 15 V, VGS = 10 V, ID = 12 A - 17.6 22
nC
VDS = 15 V, VGS = 4.5 V, ID = 12 A
-8.216
Gate-Source Charge Qgs -3.1-
Gate-Drain Charge Qgd -1.3-
Gate Resistance Rgf = 1 MHz 0.28 1.4 2.8
Turn-On Delay Time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
-816
ns
Rise Time tr-2240
Turn-Off Delay Time td(off) -1836
Fall Time tf-816
Turn-On Delay Time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
-1225
Rise Time tr-3045
Turn-Off Delay Time td(off) -1530
Fall Time tf-1326
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - - 12 A
Pulse Diode Forward Current aISM --40
Body Diode Voltage VSD IS = 10 A - 0.85 1.2 V
Body Diode Reverse Recovery Time trr
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
-3045ns
Body Diode Reverse Recovery Charge Qrr -2035nC
Reverse Recovery Fall Time ta-17-ns
Reverse Recovery Rise Time tb-13-
SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 3Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
14
28
42
56
70
00.511.52
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru4V
VGS = 3 V
10
100
1000
10000
0
0.005
0.01
0.015
0.02
0 1428425670
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 5 10 15 20
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
V
DS
= 15 V
V
DS
= 8 V
V
DS
= 24 V
I
D
= 12 A
10
100
1000
10000
0
20
40
60
80
01234
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
300
600
900
1200
1500
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
VGS = 10 V, ID= 11 A
VGS = 4.5 V, 7 A
SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 4Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
VGS(th) (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
10
100
1000
10000
0
0.005
0.01
0.015
0.02
0.025
0.03
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
Power (W)
Time (s)
0.10.010.001 100 1000101
0
5
10
15
20
25
30
10
100
1000
10000
0.01
0.1
1
10
100
0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on)(1)
TA= 25 °C
Single pulse
BVDSS limited
100 ms
10 ms
1 ms
100 µs
DC, 10 s, 1 s
IDlimited
SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 5Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
7
14
21
28
35
42
0255075100125150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
Package limited
10
100
1000
10000
0
6
12
18
24
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
TC- Case Temperature (°C)
2nd line
0.00
0.44
0.88
1.32
1.76
2.20
TA - AmbientTemperature(°C)
Power (W)
0 25 50 75 100 125 150
SiA468DJ
www.vishay.com Vishay Siliconix
S16-1266-Rev. A, 27-Jun-16 6Document Number: 67408
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67408.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
10-3 10-2
10-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10-1
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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