SILICON PLASTIC POWER TRANSISTOR PNP BD242A/B/C 3A 40W Technical Data ...designed for use in general-purpose switching and amplifier applications. F Collector-Emitter Saturation VoltageVCE=1.2Vdc(Max)@IC=3Adc F Collector-Emitter Sustaining VoltageVCEO(sus)=100Vdc(Min) F TO-220 Package MAXIMUM RATINGS Rating Symbol BD242A BD242B BD242C Unit Collector- Emitter Voltage V CEO 60 80 100 Vdc Collector - Emitter Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CES V EB IC 70 90 5 3 5 1 115 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case IB PD Adc 40 0.32 -65 to +150 Tj,Tstg Watts W/C C Symbol Max. Unit R thjc 3.125 C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage(1) VCEO(sus) [ Ic =30 mAdc, IB = 0 ] BD242A BD242B BD242C Collector Cutoff Current ICE0 [ VCE = 30 Vdc, IB = 0 ] BD242A [VCE=60Vdc,IB=0] BD242B,BD242C Collector Cutoff Current ICES [VCE=60Vdc, VBE =0] BD242A [VCE=80Vdc, VBE =0] BD242B [VCE=100Vdc,VBE =0] BD242C Emitter Cutoff Current IEBO [ VEB =5.0 Vdc , Ic = 0 ] Vdc 60 80 100 mAdc 0.3 0.3 Adc 200 200 200 1 mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 1.0Adc , VCE = 4.0 Vdc ] [ Ic = 3Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB =600mAdc ] Base-Emitter on Voltage [ Ic =3 Adc , VCE= 4V hFE 25 10 VCE(sat) VBE(on) 1.2 Vdc 1.8 Vdc DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ] Small-Signal Current Gain [ IC=0.5 Adc, VCE=10 Vdc, f=1kHz] * fT 3 hfe 20 (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% MHz