NTE54 (NPN) & NTE55 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
DDC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A
= 20 MIn @ IC = 4A
DCollector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min
DHigh Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB) 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.04W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PD2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC +2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA +62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCE(sus) IC = 10mA, IB = 0, Note 2 150 – – V
Collector Cutoff Current ICEO VCE = 150V, IB = 0 – – 0.1 mA
ICBO VCE = 150V, IE = 0 – – 10 µA
Emitter Cutoff Current IEBO VCE = 150V, IC = 0 – – 10 µA
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 2V, IC = 0.1A 40 – –
VCE = 2V, IC = 2A 40 – –
VCE = 2V, IC = 0.1A 40 – –
VCE = 2V, IC = 0.1A 20 – –
DC Current Gain Linearity hFE VCE from 2V to 20V,
IC from 0.1A to 3A –2–
NPN to PNP –3–
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A – – 0.5 V
Base–Emitter ON Voltage VBE(on) VCE = 2V, IC = 1A – – 1 V
Dynamic Characteristics
Current Gain–Bandwidth Product ftVCE = 10V, IC = 500mA,
ftest = 10MHz, Note 3 30 – – MHz
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
