NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain-Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter-Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5C/W Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE(sus) IC = 10mA, IB = 0, Note 2 150 - - V OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 150V, IB = 0 - - 0.1 mA ICBO VCE = 150V, IE = 0 - - 10 A IEBO VCE = 150V, IC = 0 - - 10 A hFE VCE = 2V, IC = 0.1A 40 - - VCE = 2V, IC = 2A 40 - - VCE = 2V, IC = 0.1A 40 - - VCE = 2V, IC = 0.1A 20 - - VCE from 2V to 20V, IC from 0.1A to 3A - 2 - NPN to PNP - 3 - ON Characteristics (Note 2) DC Current Gain DC Current Gain Linearity hFE Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - - 0.5 V Base-Emitter ON Voltage VBE(on) VCE = 2V, IC = 1A - - 1 V VCE = 10V, IC = 500mA, ftest = 10MHz, Note 3 30 - - MHz Dynamic Characteristics Current Gain-Bandwidth Product ft Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. fT = |hfe| ftest .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab