Sep. 2000
APPLICATIONS
MOSFET and IGBT inverter module driver for refriger ator,
air-conditioner, washing machine, AC-servomotor and gen-
eral purpose.
FEATURES
¡FLOATING SUPPLY VOLTAGE .................................600V
¡OUTPUT CURRENT .............................................±300mA
¡3PHASE BRIDGE DRIVER
¡SSOP-36
DESCRIPTION
M63993FP is high voltage Power MOSFET and IGBT mod-
ule driver for 3Phase bridge applications.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
PACKAGE TYPE 36P2R
NC:NO CONNECTION
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
M63993FP
UFS 1
8
2
7
3
6
4
5
36
29
928
10 27
11 26
12 25
13 24
14 23
15 22
16 21
17 20
18 19
35
30
34
31
33
32
NC
NC
NC
NC
WFS
WPO
WFB
GND
UPO COUT
UFB CIN2
NC CIN1
WNIN
GND
PGND
WNO
VNO
UNO
VCC
NC
NC
NC
NC
VFS
VPO
VFB
NC
VDD
UPIN
UNIN
VPIN
VNIN
WPIN
GND
VCC
PGND
CIN2
UFB
UPO
UFS
UPIN
VPIN
UNO
UNIN
S
RQS
RQ
10µs
+
–
+
–
ONE
SHOT
PULSE
INTER
LOCK
+
–
VDD
7.5µs
1.5µs
VDD/VCC
LEVEL SHIFT
VFB
VPO
VFS
VNO
WFB
WPO
WFS
WNO
same as U Phase
same as U Phase
VNIN
WNIN
WPIN
COUT
CIN1
INPUT RESISTOR is 50kΩ
THRESHOLD:0.1 ✽VDD (V)
THRESHOLD:0.5 ✽VDD (V)
Sep. 2000
V
V
V
V
V
V
—
—
—
—
—
—
VS+10
–5
10
4.5
0
–5
U, V, WPI N, U , V, WNI N
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
Low Side Fixed Supply Voltage
Logic Supply Voltage
Logic Input Voltage
Output GND Voltage
U, V, WFB
U, V, WFS
VCC
VDD
VIN
VPGND
VS+20
500
20
5.5
VDD
5
ABSOLUTE MAXIMUM RATINGS
Symbol UnitParameter Test Conditions Limits
Min. Typ. Max.
–0.5~624
VB–24 ~ VB+0.5
VS–0.5 ~ VB+0.5
–0.5 ~ 24
–0.5 ~ VCC+0.5
–0.5 ~ 7
–0.5 ~ VDD+0.5
±50
1.2
12.0
30
–30 ~ 125
–30 ~ 100
–40 ~ 125
U, V, WPI N, U , V, WNI N
Ta = 25°C, On Board
Ta > 25°C, On Board
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Input Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
U, V, WFB
U, V, WFS
VU, V, WPO
VCC
VU, V, WNO
VDD
VIN
dVS/dt
Pt
K q
Rth(j-c)
Tj
Topr
Tstg
Symbol Parameter Conditions Ratings Unit
RECOMMENDED OPERATING CONDITIONS
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
COUT
H
L
L
CIN2
FUNCTION TABLE 2 (COMPARATOR)
COUT is normal HIGHL
H
X
CIN1 Behavioral state
H
X
L
L
L
H
L
L
L
UV
H
H
H
X
L
L
U , V, WNIN U , V, WNO
FUNCTION TABLE 1 (INPUT, OUTPUT and UV)
Normal OFF
✽NO ON
✽PO ON
✽PO = OFF, ✽NO = OFF, ✽PIN = ✽NIN = L simultaneously
✽PO OFF, ✽VB UV tripped
✽NO ON, ✽VB UV tripped
H
H
L
L
X
H
U, V, WPIN Behavioral state
U, V, WPO
H
L
H
L
H
L
L
H
L
L
L
H
Note : “L” state of ✽VB UV mean that UV trip voltage.
Sep. 2000
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
VDD standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Trip Voltage
VBS Supply UV Reset Voltage
VBS Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Tur n-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Comparator 1 Threshold Voltage
Comparator 1 Filter Time
Comparator 2 Threshold Voltage
Comparator 2 Filter Time
Comparator H Level Output Voltage
Comparator L Level Output Voltage
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
µA
mA
mA
mA
V
V
V
V
µA
µA
V
V
µs
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
V
µs
V
µs
V
V
—
—
—
—
14.9
—
2.1
0.6
—
—
7.0
7.5
—
—
—
250
230
—
—
250
230
—
—
0.47
—
2.4
—
4.5
—
—
0.48
—
0.5
—
—
3.0
1.5
—
100
8.0
8.5
7.5
–300
300
300
280
130
100
300
280
130
100
0.5
1.5
2.5
7.5
—
—
1
—
0.1
—
—
0.1
4.0
1.9
1.0
300
9.0
9.5
—
—
—
350
330
—
—
350
330
—
—
0.53
—
2.6
—
—
0.5
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
VB=VS=600V per 1 phase
IO=0A, ✽NO, ✽PO
IO=0A, ✽NO, ✽PO
✽PIN, ✽NIN
✽PIN, ✽NIN
✽PIN, ✽NIN=5V
✽PIN, ✽NIN=0V
✽PO✽NO=0V, ✽PIN, ✽NIN=5V,PW<10µs
✽PO✽NO=15V, ✽PIN, ✽NIN=0V,PW<10µs
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
VDD=5V
VDD=5V
ICO=500µA
ICO=–500µA
IFS
IBS
ICC
IDD
VOH
VOL
VIH
VIL
IIH
IIL
VUVT
VUVR
tUV
IOH
IOL
tdLH(HO)
tdHL(HO)
tr(HO)
tf(HO)
tdLH(LO)
tdHL(LO)
tr(LO)
tf(LO)
VCIN1th
tVCIN1
VCIN2th
tVCIN2
VCOH
VCOL
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS=15V, VDD=5V unless otherwise specified)
Sep. 2000
UFS, VFS, WFS
UPO, VPO, WPO
UFB, VFB, WFB
VCC
UNO, VNO, WNO
PGND
UNIN, VNIN, WNIN
UPIN, VPIN, WPIN
VDD
CIN1
CIN2
COUT
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
High Side floating supply (minus side)
Lead symbol Description
LEAD DEFINITIONS
TIMING DIAGRAM
High side gate drive output
High Side floating supply (plus side)
Low side supply
Low side gate drive output
Low side power ground
Logic input for low side gate driver output (LO)
Logic input for high side gate driver output (HO)
Logic supply
Input for comparator 1
Input for comparator 2
Comparator output
1. Input/Output Timing Diagram
✽PIN
✽PO
✽NO
✽NIN
2. VBS Supply Undervoltage Lockout Timing Diagram
VBS
✽PO
✽1
✽PIN
✽1: VBS=✽FB-✽FS
tVBSUV
VBSUVT VBSUVR
Sep. 2000
PERFORMANCE CURVES
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
IFS vs. Temperature IBS vs. Temperature
10
7
8
9
6
5
3
2
1
0
–20 2507550 125100 –20 2507550 125100
4
–1
Temperature (°C)
IFS (µA)
IIL (µA)
Temperature (°C)
–20 2507550 125100 –20 2507550 125100
VIL, VIH vs. Temperature IDD vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
IBS (mA)
–20 2507550 125100 –20 2507550 125100
VBSUVT, VBSUVR vs. Temperature IIL vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIL, VIH (V)
Temperature (°C)
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
IDD (mA)
Temperature (°C)
300
250
200
150
100
50
0
Temperature (°C)
9.5
9.0
8.5
8.0
7.5
7.0
VBSUVT, VBSUVR (V)
Temperature (°C)
VIH
VIL
VBSUVT
VBSUVR
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
IOH, IOL vs. Temperature IOH, IOL vs. Voltage
450
400
350
250
200
150
100
50
0
–20 2507550 125100 1413 1615 20191817
300
40
35
25
20
15
10
5
0
30
450
400
350
250
200
150
100
50
0
300
Temperature (°C)
–20 2507550 125100
Temperature (°C)
IOH, IOL (mA)
✽FB, VCC (V)
ROL vs. Temperature ROL vs. Voltage
IOH, IOL (mA)
–20 2507550 125100
ROL (Ω)
ROL (Ω)
✽FB, VCC (V)
13 14 1615 18 1917 20
40
35
25
20
30
15
10
5
0
60
50
40
30
20
10
0
ROH (Ω)
Temperature (°C)
ROH vs. Temperature 60
50
40
30
10
20
02018 1916 17151413
ROH (Ω)
✽FB, VCC (V)
ROH vs. Voltage
IOL
IOH
IOL
IOH
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
tdLH, tdHL vs. Temperature tdLH vs. Voltage
450
400
350
250
200
–20 2507550 125100 1413 1615 20191817
300
450
400
350
250
200
300
Temperature (°C)
tdLH, tdHL (ns)
10 100 1000
tdLH (ns)
10000
1000
100
10
1
Power Loss (mW)
Frequency (kHz)
10 100 1000
10000
1000
100
10
1
Power Loss (mW)
Frequency (kHz)
✽FB, VCC (V)
tdLH (LO)
tdLH (HO)
tdHL (LO)
tdHL (HO)
✽FB=VCC=15V, VDD=5V, CL=1000pF ✽FB=VCC=15V
VDD=5V
VS=400V
VS=300V
CL=10000pF
CL=1000pF
CL=0pF
VS=200V
VS=100V
Power Loss (3Phase operation mode)
vs. Frequency Power Loss (3Phase operation mode)
vs. Frequency (HV=0V)
tdLH (HO)
tdLH (LO)
tdHL (LO)
tdHL (HO)
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
VCIN1th vs. Temperature VCIN1th vs. Voltage
0.60
0.55
0.45
0.50
0.40
–20 2507550 125100 4.5 5.55
Temperature (°C)
VCIN1th (V)
tVCIN1 (µS)
VDD (V)
–20 2507550 125100
VCIN2th vs. Temperature
VCIN1th (V)
–20 2507550 125100
tVCIN1 vs. Temperature tVCIN1 vs. Voltage
3.0
2.8
2.6
2.4
2.2
2.0
VCIN2th (V)
Temperature (°C)
3.0
2.0
1.0
0.0
VDD (V)
3.0
2.0
1.0
0.0
tVCIN1 (µS)
Temperature (°C)
4.5 5 5.5
0.60
0.55
0.45
0.50
0.40
VCIN1th (V)
VCIN1th vs. Voltage
3.0
2.6
2.8
2.2
2.4
2.0
VDD (V)
4.5 5 5.5
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
tVCIN2 vs. Temperature tVCIN2 vs. Voltage
15.0
10.0
5.0
0.0
–20 2507550 125100 4.5 5.55
Temperature (°C)
tVCIN2 (µS)
VCOL (V)
VDD (V)
–20 2507550 125100
VCOH vs. Temperature
tVCIN2 (µS)
–20 2507550 125100
VCOL vs. Temperature VCOL vs. Voltage
6.0
5.5
5.0
4.5
4.0
VCOH (V)
Temperature (°C)
VDD (V)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VCOL (V)
Temperature (°C)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
4.5 5 5.5
15.0
10.0
0.0
5.0
VCOH (V)
VCOH vs. Voltage
6.0
5.0
5.5
4.0
4.5
VDD (V)
4.5 5 5.5
Sep. 2000
SSOP36-P-450-0.80 Weight(g)
–
JEDEC Code 0.53
EIAJ Package Code Lead Material
Cu Alloy
36P2R-D
Plastic 36pin 450mil SSOP
Symbol Min Nom Max
A
A
2
b
c
D
E
L
L
1
y
Dimension in Millimeters
H
E
A
1
I
2
–
–
.30
0
.180.814.28–
.6311.30–
–
–
.271
.10–
.052.350.20.015.48.80.9311.50.7651–
.4311–
.20.352
–
.450.250.215.68–
.2312.70–
.10
–
b
2
–.50–
–
0°–8°
e
e
1
36 19
18
1
H
E
E
D
b
ey
F
A
A
2
A
1
L
1
L
c
eb
2
e
1
I
2
Recommended Mount Pad
Detail F
PACKAGE OUTLINE
MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
2.0
1.5
1.0
1.2
0.5
01251007550250
Power Dissipation Pt (W)
Ambient Temperature Ta (°C)
Thermal Derating Factor Characteristics
