FDMS8020 N-Channel PowerTrench(R) MOSFET 30 V, 131 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 A Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design VRM Vcore Switching For Desktop And Server 100% UIL tested OringFET / Load Switching RoHS Compliant DC-DC Conversion Motor Bridge Switch Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 C -Continuous TC = 100 C -Continuous TA = 25 C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG TC = 25 C Power Dissipation TA = 25 C Units V V (Note 4) 20 (Note 6) 131 (Note 6) 83 (Note 1a) 26 (Note 5) 507 (Note 3) Power Dissipation Ratings 30 93 65 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient 1.9 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS8020 Device FDMS8020 (c)2011 Fairchild Semiconductor Corporation FDMS8020 Rev. 1.3 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8020 N-Channel PowerTrench(R) MOSFET May 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 14 mV/C 1 A 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C -6 VGS = 10 V, ID = 26 A 2.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 21.5 A 2.6 3.6 VGS = 10 V, ID = 26 A, TJ = 125 C 2.9 3.7 VDS = 5 V, ID = 26 A 154 gFS Forward Transconductance 1.0 1.5 mV/C 2.5 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2855 3800 pF 1050 1400 pF 115 175 pF 0.9 Switching Characteristics 12 22 VDD = 15 V, ID = 26 A, VGS = 10 V, RGEN = 6 5.7 12 ns 32 52 ns 4 10 ns Total Gate Charge VGS = 0 V to 10 V 43 61 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 26 A 21 29 7.3 nC 6.0 nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge ns nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.68 1.1 VGS = 0 V, IS = 26 A (Note 2) 0.78 1.2 IF = 26 A, di/dt = 100 A/s IF = 26 A, di/dt = 300 A/s V 37 58 ns 18 33 nC 30 48 ns 36 57 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C; N-ch: L = 0.3 mH, IAS = 25 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 5. Pulsed Id please refer to SOA curve for more details. 6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. (c)2011 Fairchild Semiconductor Corporation FDMS8020 Rev. 1.3 2 www.fairchildsemi.com FDMS8020 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted. 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 150 VGS = 4.5 V 120 VGS = 4 V VGS = 3.5 V 90 VGS = 3 V 60 30 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 1 2 3 4 VGS = 3 V 4 VGS = 3.5 V 3 2 VGS = 4 V 1 0 5 0 30 Figure 1. On-Region Characteristics 90 120 150 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.6 10 ID = 26 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 150 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 90 TJ = 150 oC 60 TJ = 25 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 6 TJ = 125 oC 4 2 TJ = 25 oC 200 100 4 6 8 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2011 Fairchild Semiconductor Corporation FDMS8020 Rev. 1.3 8 Figure 4. On-Resistance vs. Gate to Source Voltage 120 1.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 1.0 ID = 26 A 0 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3 www.fairchildsemi.com FDMS8020 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 10000 ID = 26 A Ciss 8 VDD = 12 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 18 V 6 VDD =15 V 4 Coss 1000 Crss 100 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 25 30 35 40 10 0.1 45 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 150 100 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RJC = 1.9 C/W TJ = 25 oC 10 TJ = 100 oC 120 VGS = 10 V 90 VGS = 4.5 V 60 30 TJ = 125 oC 1 0.01 0.1 1 10 0 25 100 300 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 125 150 10000 10 s 100 100 s THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED RJC = 1.9 oC/W TC = 25 oC 0.1 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 1 75 o Figure 9. Unclamped Inductive Switching Capability 10 50 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 ms CURVE BENT TO MEASURED DATA 1 10 DC 100 VDS, DRAIN to SOURCE VOLTAGE (V) TC = 25 oC 1000 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area (c)2011 Fairchild Semiconductor Corporation FDMS8020 Rev. 1.3 SINGLE PULSE RJC = 1.9 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8020 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZJC(t) = r(t) x RJC RJC = 1.9 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDMS8020 Rev. 1.3 5 www.fairchildsemi.com FDMS8020 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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