BUP 604 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code BUP 604 600V 80A TO-218 AB Q67040-A4231-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values Unit 600 V 600 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 80 TC = 90 C 50 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 160 TC = 90 C 100 EAS Avalanche energy, single pulse mJ IC = 50 A, VCC = 50 V, RGE = 25 L = 60 H, Tj = 25 C 75 Ptot Power dissipation TC = 25 C W 300 Chip or operating temperature Tj - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 C Jul-31-1996 BUP 604 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance 0.4 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.7 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 50 A, Tj = 25 C - 2.1 2.7 VGE = 15 V, IC = 50 A, Tj = 125 C - 2.2 2.8 VGE = 15 V, IC = 100 A, Tj = 25 C - 3 3.8 VGE = 15 V, IC = 100 A, Tj = 125 C - 3.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current A - - 300 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 50 A Input capacitance 6 pF - 2600 3600 - 280 420 - 165 250 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-31-1996 BUP 604 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Rise time - 60 90 - 80 120 - 320 480 - 550 780 tr VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Fall time tf VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Semiconductor Group 3 Jul-31-1996 BUP 604 Power dissipation Ptot = (TC) parameter: Tj 150 C Ptot Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 320 80 W A IC 240 60 200 50 160 40 120 30 80 20 40 10 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C TC 160 TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 3 IGBT 10 0 A K/W t = 2.9s p IC ZthJC 10 2 10 s 10 -1 100 s 10 1 1 ms D = 0.50 0.20 10 ms 10 -2 0.10 0.05 10 0 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -5 10 3 VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-31-1996 BUP 604 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 100 100 A IC 80 70 A 17V 15V 13V 11V 9V 7V IC 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-31-1996 BUP 604 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 par.: VCE = 300 V, VGE = 15 V, IC = 50 A 10 3 10 3 tdoff tf t tf t ns ns tdoff tr tdon tr 10 2 10 2 tdon 10 1 0 20 40 60 80 100 A IC 10 1 0 140 20 40 60 80 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 10 par.: VCE = 300V, VGE = 15 V, IC = 50 A 10 Eoff mWs E 120 RG mWs 8 E 8 7 7 6 6 Eoff Eon 5 5 Eon 4 4 3 3 2 2 1 1 0 0 20 40 Semiconductor Group 60 80 100 A IC 0 0 140 6 20 40 60 80 120 RG Jul-31-1996 BUP 604 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 50 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 Ciss C 100 V 14 300 V 10 0 12 10 Coss Crss 8 10 -1 6 4 2 0 0 20 40 60 80 100 120 nC 160 10 -2 0 5 10 15 20 25 30 V 40 VCE Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 10 2.5 I Csc/I C(90C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0.0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 7 0 100 200 300 400 500 600 V 800 VCE Jul-31-1996 BUP 604 Package Outlines Dimensions in mm Weight: 8g Semiconductor Group 8 Jul-31-1996