Semiconductor Group 1 Jul-31-1996
BUP 604
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
CPackage Ordering Code
BUP 604 600V 80A TO-218 AB Q67040-A4231-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 600 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 600
Gate-emitter voltage
V
GE ± 20
DC collector current
T
C = 25 °C
T
C = 90 °C
I
C
50
80 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 90 °C
I
Cpuls
100
160
Avalanche energy, single pulse
I
C = 50 A,
V
CC = 50 V,
R
GE = 25 Ω
L
= 60 µH,
T
j = 25 °C
E
AS
75
mJ
Power dissipation
T
C = 25 °C
P
tot 300 W
Chip or operating temperature
T
j- 55 ... + 150 °C
Storage temperature
T
stg - 55 ... + 150
Semiconductor Group 2 Jul-31-1996
BUP 604
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC ≤ 0.4 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 0.7 mA
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 50 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 50 A,
T
j = 125 °C
V
GE = 15 V,
I
C = 100 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 100 A,
T
j = 125 °C
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
3.8
2.8
2.7
Zero gate voltage collector current
V
CE = 600 V,
V
GE = 0 V,
T
j = 25 °C
I
CES - - 300 µA
Gate-emitter leakage current
V
GE = 25 V,
V
CE = 0 V
I
GES - - 100 nA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 50 A
g
fs 6 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 2600 3600 pF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 280 420
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 165 250
Semiconductor Group 3 Jul-31-1996
BUP 604
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
T
j = 125 °C
Turn-on delay time
V
CC = 300 V,
V
GE = 15 V,
I
C = 50 A
R
Gon = 22 Ω
t
d(on)
- 60 90
ns
Rise time
V
CC = 300 V,
V
GE = 15 V,
I
C = 50 A
R
Gon = 22 Ω
t
r
- 80 120
Turn-off delay time
V
CC = 300 V,
V
GE = -15 V,
I
C = 50 A
R
Goff = 22 Ω
t
d(off)
- 320 480
Fall time
V
CC = 300 V,
V
GE = -15 V,
I
C = 50 A
R
Goff = 22 Ω
t
f
- 550 780
Semiconductor Group 4 Jul-31-1996
BUP 604
Power dissipation
P
tot = ƒ(
T
C)
parameter:
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
40
80
120
160
200
240
W
320
P
tot
Collector current
I
C = ƒ(
T
C)
parameter:
V
GE ≥ 15 V ,
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
10
20
30
40
50
60
A
80
I
C
Safe operating area
I
C = ƒ(
V
CE)
parameter:
D
= 0
, T
C = 25°C ,
T
j ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10 0 10 1 10 2 10 3
V
V
CE
DC
10 ms
1 ms
100 µs
10 µs
t
p = 2.9µs
Transient thermal impedance IGBT
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 5 Jul-31-1996
BUP 604
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 25 °C
0 1 2 3 V 5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 125 °C
0 1 2 3 V 5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f
(
V
GE)
parameter:
t
p = 80 µs,
V
CE = 20 V
0246810 V 14
V
GE
0
10
20
30
40
50
60
70
80
A
100
I
C
Semiconductor Group 6 Jul-31-1996
BUP 604
Typ. switching time
t
=
f
(
R
G)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
I
C = 50 A
020 40 60 80 Ω120
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
I
=
f
(
I
C)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 22 Ω
020 40 60 80 100 A 140
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f
(
I
C)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 22 Ω
020 40 60 80 100 A 140
I
C
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
Typ. switching losses
E = f
(
R
G)
,
inductive load
, T
j = 125°C
par.:
V
CE = 300V,
V
GE = ± 15 V,
I
C = 50 A
020 40 60 80 Ω120
R
G
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
Semiconductor Group 7 Jul-31-1996
BUP 604
Typ. gate charge
V
GE = ƒ(
Q
Gate)
parameter:
I
C puls = 50 A
020 40 60 80 100 120 nC 160
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
300 V100 V
Typ. capacitances
C
=
f
(
V
CE)
parameter:
V
GE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-2
10
-1
10
0
10
1
10
nF
C Ciss
Coss
Crss
Short circuit safe operating area
I
Csc =
f
(
V
CE) ,
T
j = 150°C
parameter:
V
GE = ± 15 V,
t
sc
≤ 10 µs, L < 50 nH
0100 200 300 400 500 600 V 800
V
CE
0
2
4
6
10
I
Csc/
I
C(90°C)
Reverse biased safe operating area
I
Cpuls =
f
(VCE) ,
T
j = 150°C
parameter:
V
GE = 15 V
0100 200 300 400 500 600 V 800
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls/
I
C
Semiconductor Group 8 Jul-31-1996
BUP 604
Package Outlines
Dimensions in mm
Weight: 8g
