APT10045JFLL 1000V 21A 0.46 POWER MOS 7 R FREDFET S S 27 (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SO "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 2 T- D G D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT10045JFLL UNIT 1000 Volts Drain-Source Voltage 21 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 460 Watts Linear Derating Factor 3.68 W/C VGSM PD TJ,TSTG 84 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 21 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1000 Volts 21 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX (VGS = 10V, 11.5A) 0.46 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 2-2009 BVDSS Characteristic / Test Conditions 050-7038 Rev C Symbol APT10045JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions C iss Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V C rss Total Gate Charge Qgs 3 Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 500V Turn-off Delay Time tf ID = 23A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 639 VDD = 670V, VGS = 15V Eon nC 8 RG = 0.6 Eon UNIT pF 120 154 26 97 10 5 30 VGS = 10V Qgd MAX 4350 715 VDD = 500V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN ID = 23A, RG = 5 380 INDUCTIVE SWITCHING @ 125C 1046 VDD = 670V VGS = 15V ID = 23A, RG = 5 J 451 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM VSD dv/ MIN TYP MAX 23 Continuous Source Current (Body Diode) (Body Diode) 92 Diode Forward Voltage 2 (VGS = 0V, IS = -21A) 1.3 Volts 18 V/ns dv/ dt 5 Reverse Recovery Time (IS = -21A, di/dt = 100A/s) Tj = 25C 340 Tj = 125C 640 Q rr Reverse Recovery Charge (IS = -21A, di/dt = 100A/s) Tj = 25C 1.78 Tj = 125C 4.47 IRRM Peak Recovery Current (IS = -21A, di/dt = 100A/s) Tj = 25C 11.4 Tj = 125C 16.4 t rr Amps Pulsed Source Current 1 Peak Diode Recovery dt UNIT ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 t1 t2 Duty Factor D = t1/t2 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7038 Rev C 2-2009 0.30 0.9 0.1 Peak TJ = PDM x ZJC + TC 0.05 10-5 SINGLE PULSE 10-4 C/W 4 Starting Tj = +25C, L = 11.34mH, RG = 25, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID21A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT10045JFLL 60 0.0409 Power (Watts) 0.225 0.00361 0.0246F 0.406F 148F Case temperature ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( "C) 50 7V VGS =15 & 8V 40 6.5V 30 6V 20 5.5V 10 5V 0 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 50 40 30 20 TJ = +125C 10 0 TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 25 20 15 10 5 0 25 I D V 1.30 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 1.2 = 11.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 NORMALIZED TO = 10V @ 11.5A GS -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 V 1.1 1.0 0.9 0.8 2-2009 70 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7038 Rev C ID, DRAIN CURRENT (AMPERES) 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 APT10045JFLL Typical Performance Curves 20,000 10,000 OPERATION HERE LIMITED BY RDS (ON) Ciss 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) = 23A 12 VDS=200V VDS=500V 8 Coss Crss 100 10 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 D 1,000 10mS 1 I C, CAPACITANCE (pF) 50 VDS=800V 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 90 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 60 V 140 G 50 = 670V = 5 T = 125C tf J 120 L = 100H V 100 G 40 = 670V DD R tr and tf (ns) td(on) and td(off) (ns) DD R td(off) = 5 T = 125C J 80 L = 100H 60 30 20 tr 40 10 td(on) 20 0 0 0 10 20 30 40 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 0 20 30 40 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2000 4000 DD R G = 670V = 5 SWITCHING ENERGY (J) 2-2009 J 1500 3500 Eon T = 125C L = 100H EON includes diode reverse recovery. 1000 500 Eoff 0 SWITCHING ENERGY (J) V 050-7038 Rev C 10 Eoff 3000 2500 Eon 2000 1500 V DD I D 1000 = 670V = 23A T = 125C J L = 100H EON includes 500 diode reverse recovery. 0 0 5 10 15 20 25 30 35 40 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT10045JFLL Gate Voltage 10 % 90% Gate Voltage T = 125 C J td(on) T = 125 C J td(off) tr Drain Voltage Drain Current 5% 90% 90% 5% 10% Drain Voltage 10 % tf Switching Energy Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT15DF120B V DD Drain Current 0 IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.