MOTOROLA SC {XSTRS/R FI 4h DE csu7254 ooaeoor 2 [ 7 2 oe CT ee a BT Ta 6367254 MOTOROLA SC (XSTRS/R F) 96D 82007 #423DB ~ - t - 297-25 MAXIMUM RATINGS T 7 Rating Symbol Value Unit Drain-Source Voltage Vps 25 Vde MMBF5457 Drain-Gate Voltage VoG 25 Vde Reverse Gate-Source Voltage Vasir) 25 Vde Gate Currant Ig 10 mAde CASE 318-02/03, STYLE 10 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 2 Source Ta = 25C 3 Derate above 25C 18 mwrc 3 Thermal Resistance Junction to Ambiant Raja 556 C/mW i ge Gate Total Device Dissipation Pp 300 mw 2 1 Drain Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient RaJA 417 CimW Junction and Storage Temperature Ty. Tstg 150 C JFET *FRE = 1.0 x 0.75 x 0.62 in. GENERAL PURPOSE TRANSISTOR +e = i oy j Alumina = 0.4 x 0.3 x 0,024 in. 99.5% alumina. N-CHANNEL DEVICE MARKING | MMBF5457 = 6D | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) I Characteristic | Symbo! | Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BRIGSS 25 - - Vde {ig = 10 wAdc, Vps = 0} Gate Reverse Current less nAdc {Veg = 15 Vde, Vps = 0) _ _ 1,0 (Vgs = 15 Vdc, Vps = 0, Ta = 100C) _ - 200 Gate Source Cutoff Voltage VGSloff) 0.5 _ 6.0 Vde (Vos = 15 Vde, Ip = 10 nAde) Gate Source Voitage Ves _ 2.5 Vde Vpg = 15 Vde, Ip = 100 wAde) ON CHARACTERISTICS Zero-Gate-Voltage Drain(1) IDss 1.0 - 5.0 mAdc (Vpg = 15 Vdc, Vag = 0) SMALL-SIGNAL CHARACTERISTICS * | Forward Transfer Admittanca(1) Yisl 1000 _ 5000 | pumhos (Vpg = 15 Vde, Vgg = 0, f = 1.0 kHz} Reverse Transfer Admittance lyrsl - 10 50 pumhos (Vps = 16 Vdc, Vgg = 0, f = 1.0 kHz) Input Capacitance Ciss _ 4.5 7.0 pF (Vpg = 15 Vdc, Veg = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss _ 1.5 3.0 pF (Vpg = 15 Vdc, Vag = 0, f = 1.0 MHz) (1) Pulse test: Pulse Width < 630 ms; Duty Cycle = 10%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-72MOTOROLA SC {fXSTRS/R FT Tb pe uauz25y HoOeoos 4 i a mae 2 j 6367254 MOTOROLA SC CXSTRS/R F) 86D 8200 D : ; ' MAXIMUM RATINGS - 7 2 G - ZS Rating Symbol Value Unit Drain-Gate Voltage VpG 25 Vde . Reverse Gate-Source Voltage Vest -25 Vde M MBF5459 , Gate Current Ig 10 mAdc CASE 318-02/03, STYLE 10 i THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) ! t Characteristic Symbo! Max Unit : Total Device Dissipation FR-5 Board,* Pp 225 mw } Ta = 25C. 2 Source Derate above 26C 1.8 mwrc 3 Thermal Resistance Junction to Ambient Raja 556 CimWw 3 Total Device Dissipation Pp 300 mw 4 eo Gate Atumina Substrate,** Ta = 25C 2 1 Drain Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient Rasa 417 CimW Junction and Storage Temperature Ty. Tstg 150 C JFET *FR-5 = 1.0 x 0.75 x 0.82 in. TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING N-CHANNEL | MMBFE459 = GL | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BRIGSS 25 _ Vde (Ig = 10 vA, Vpg = 9) Gate 1 Leakage Current Ig1ss _ 1.0 nA (Vgg = -15V. Vps = 0} Gate 2 Leakage Current Ig2ss _ 200 nA (Ves = 15V, Vos = 0, Ta = 100C} Gate Source Cutoff Voltage VGsioft) 2.0 8.0 Vde (Vps = 15 V, Ip = 10 nA) ON CHARACTERISTICS Zero-Gate-Voltage Drain : Ipss 4.0 16 mA (Vps = 16 V. Veg = 0) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance lsl 2000 6000 zpmhos (Vps = 15 V, Vag = 0,f = 1.0 kHz} Output Admittance lvosl - 50 umhos (Vps = 15 V. VGs = 0, f = 1.0 kHz) Input Capacitance Ciss _ 7.0 pF (Vps = 15 V, Veg = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crgs - 3.0 pF (Vps = 15 V. Veg = 0, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-73MOTOROLA SC {XSTRS/R FI qb DE fb au7254 0082009 & [ ae et so eo eR ae 6367254 MOTOROLA SC CXSTRS/R F? 86D 862009 - #B _F-a7-2as MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VpG 40 Vde MMBF5460 Reverse Gate-Source Voltage VesR 40 Vde Forward Gate Current IGF 10 mAdc CASE 318-02/03, STYLE 10 THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol - Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW 2 Source Ta = 25C Derate above 25C 1.8 mwrc Thermal Resistance Junction to Ambient Raa 556 Cimw Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 26C Derate above 25C 2.4 mWwre i Thermal Resistance Junction to Ambient ReJA 417 CimW Junction and Storage Temperature Tar Tstg 150 C JFET *FR-5 = 1.0 x 0.75 x 0.62 in. GENERAL PURPOSE **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. TRANSISTOR DEVICE MARKING | MMBF5460 = 6E : | 1 Drain P-CHANNEL ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbot | Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage VIBRIGSS 40 _ _ Vde (Ig = 10 pAde, Vpg = 0} Gate Reverse Current less (Vgs = 20 Vide, Vps = 0) _- _ 5.0 nAde (VGs = 20 Vde, Vos = 0, Ta = 100C) _- _ 1.0 pAdc Gate Source Cutoff Voltage VGS\(off) 0.75 _ 6.0 Vdc (Vpg = 15 Vde, Ip = 1.0 pAdc} Gate Source Voltage Ves 0.5 _ 40 Vde (Vps = 15 Vde, Ip = 0.1 mAdc) ON CHARACTERISTICS Zero-Gate-Voltaga Drain (Vps = 15 Vdc, Veg = 0) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance \tst 71000 _ 4000 pmhos (Vpsg = 15 Vde, Vgg = 0, f = 1.0 kHz) Output Admittance lYos! - - 75 pmhos {Vps = 15 Vde, Vag = 0, f = 1.0 kHz) Input Capacitance Cigs _- 5.0 7.0 pF (Vps = 15 Vde, Veg = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss _ 1.0 2.0 pF {Vps = 15 Vde, Vgg = 0, f = 1.0 MHz} Equivalent Short-Circuit Input Noise Voltage eq _ 20 _ nV/VHz (Vps = 15 Vdc, Vas = 0, Rg = 1.0 MO, f = 100 Hz, BW = 1.0 Hz) loss | 1.0 | | 5.0 | me | MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-74MOTOROLA SC {IXSTRS/R FT Ib pe an7asy 0062010 2 [ 6367254 MOTOROLA SC (XSTRS/R F) 86D 82010. BD | : a MAXIMUM RATINGS ______ J - 77 - 2 Ss Rating Symbol Value Unit I Drain-Gate Valtage Vpe 25 Vde ! Reverse Gate-Source Voltage VGsir} 25 Vde MMBF5484 | Forward Gate Current IGit) 10 mAdc i Continous Device Dissipation at or Below: Pp 700 Ww CASE 318-02/03, STYLE 10 ! c = 25" m . . Linear Derating Factor 2.8 mWFC SOT-23 (TO 236AA/AB) Storage Channel Temperature Range Tstg 65 to +150 *c \ 2 Source THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit 3 a oi nati, eo Gate Total Device Dissipation FR-5 Board, Pp 225 mw 1 a Ta, = 25C 2 Derate above 25C 18 mWPrc 1 Drain , Thermal Resistance Junction to Ambient Raa 556 sCimW Total Device Dissipation Pp 300 mW JFET Alumina Substrate,** Ta = 25C Derate above 26C 24 mWwrc TRANSISTOR Thermal Resistance. Junction to Ambient Raa 417 CrmW N-CHANNEL Junction and Storage Temperature Ty. Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING [ MMBF5484 = 6B | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBRIGSS -25 _ Vde {ig = 1.0 pA, Vps = 0) Gate Reverse Current less : (Ves = 20V. Vos = 0) - -1,0 nA i (Veg = 20V. Vpg = 0, Ta = 100C) - -0,2 pA Gate Source Cutoff Voltage VGS\(off) -0.3 -3.0 Vde (Vos = 15 V, Ip = 10 nA) ON CHARACTERISTICS Zero-Gate-Voltage Drain ipss 1.0 5.0 mAdc (Vps = 15 Vv, Vas = 9) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance IYfsl 3000 6000 zumhos (Vpg = 15 V, Vas = 0, f = 1.0 kHz) Output Admittance iYos| _ 50 pmhos (Vos = 15 V, Ves = 0, f = 1.0 kHz} input Capacitance Ciss - 5.0 pF (Vps = 15 V, Veg = 0. f = 1.0 MHz} Reverse Transfer Capacitance Crss _ 1.0 pF . (Vps = 15 V, Vag = 0, f = 1.0 MH2) \ Output Capacitance Coss _ 2.0 pF (Vps = 15 V. V@g = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure NF dB (Vps = 15 V, Ip = 1.0 mA, YG = 1.0 mmhos) (Rg = 1.0 k, f = 100 MHz) ~~ 3.0 (Vps = 15 V, Vag = 0, YG = 1.0 zmho} (Rg = 1.0 MO, f = 1.0 kHz) - 2.5 Common Source Power Gain Gps 16 25 dB (Vpg = 15 Vde, Ip = 1.0 mAde, f = 100 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-75 *MOTOROLA SC f{XSTRS/R Ft bra 6367254 MOTOROLA SC (XSTRS/R F) MAXIMUM RATINGS Sb DEpese7es4 ooaeoza 4 ~ 96D 82011 OD 7-26-25 Rating Symbol Value Unit Orain-Gate Voltage VbG 25 Vde Reverse Gate-Source Voltage Vesir} 25 MMBF5486 Vde Forward Gate Current lott 10 mAdc THERMAL CHARACTERISTICS CASE 318-02/03, STYLE 10 SOT-23 (TO-236AA/AB) Characteristic Symbol Unit Total Device Dissipation FR-5 Board,* Pp 225 Ta = 25C Derate above 25C 1.8 mWPC mw 2 Source Therma! Resistance Junction to Ambient Rega 556 CimW Total Device Dissipation Pp 300 Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwrc mW 1 Drain Thermal Resistance Junction to Ambient Raja 417 CimWw Junction and Storage Temperature Ty. Tstg 150 *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING JFET TRANSISTOR N-CHANNEL | MMBF5486 = 6H ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic |__Symbot Min Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ps = 0, Ig = 1.0 nA) ViBR)GSS Vde Gate 1 Leakage Current (Veg = 20 V, Vps = 0) Iqiss _ Gate 2 Leakage Current (Vas = 20V,Vps = 0, Ta = 100C} Ig2ss - ~0.2 BA Gate Source Cutoff Voltage (Vps = 15 V, Ip = 10 nA} VGSloft) -2.0 6.0 Vde ON CHARACTERISTICS Zero-Gate-Voltage Drain (Vag = 0, Vps = 15 V) | ms | 8 fe fom | SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (Vg6s = 0, Vps = 15 V,f = 1.0 kHz} Ws! 4000 8000 zuMhos Input Admittance (Vag = 0. Vpsg = 15 V, f = 400 MHz} Relyjs} _ 1000 pemhos Output Admittance (Ves = 0, Vps = 15 V, f = 1.0 kHz} los! - 75 pmhos Output Conductance {Veg = 0. Vpg = 15 V, f = 400 MHz) Re(yos) - 100 pmhos Forward Transcanductance (Vgs = 0, Vps = 15 V, f = 400 MHz} Relys) pmhos Input Capacitance (Vgs = 0, Vpg = 15 V, f = 1.0 MHz) Ciss _ 5.0 pF Reverse Transfer Capacitance (Ves = 0, Vps = 15 V, f = 1.0 MHz) Crss - 1.0 pF Output Capacitance (Veg = 0, Vpg = 15 V, f = 1.0 MHz) Coss _ 2,0 pF FUNCTIONAL CHARACTERISTICS Noise Figure (Vps = 15 V, Ip = 4.0 mA, f = 100 MHz, Yg = 1.0 mhos) (Vps = 15 V, ID = 4.0 mA, Rg = 1.0 kf, f = 400 MHz, Yg = 1.0 umhos) (Ves = 0. Vps = 15 V, Rg = 1.0 mO,f = 1.0 kHz, Yg = 1.0 zmhos} NF dB Common Source Power Gain (Vpg = 16 V, Ip = 4.0 mA, f = 100 MHz) (Vps = 15 V, Ip = 4.0 mA, f = 400 MHz) Gps dB 18 30 10 20 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-76