ILD32/ ILQ32 VISHAY Vishay Semiconductors Dual/Quad Channel Photodarlington Optocoupler Features * * * * Isolation Test Voltage, 5300 VRMS High Isolation Resistance, 1011 Typical Low Coupling Capacitance Standard Plastic DIP Package A 1 8 E C 2 7 C C 3 6 C A 4 5 E Agency Approvals * UL - File No. E52744 * DIN EN 60747-5-5 (VDE 0884):2003-01 Available with Option 1 Description The ILD32/ ILQ32 are optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. A 1 16 E C 2 15 C C 3 14 C A 4 13 E A 12 E 5 C 6 11 C 7 10 C C 9 A 8 E i179017 Order Information Part Remarks ILD32 CTR > 500 %, DIP-8 ILQ32 CTR > 500 %, DIP-16 ILD32-Xxx6 CTR > 500 %, DIP-8 400 mil (option 6) ILD32-Xxx7 CTR > 500 %, SMD-8 (option 7) ILD32-Xxx9 CTR > 500 %, SMD-8 (option 9) ILQ32-Xxx6 CTR > 500 %, DIP-16 400 mil (option 6) ILQ32-Xxx7 CTR > 500 %, SMD-8 (option 7) ILQ32-Xxx9 CTR > 500 %, SMD-8 (option 9) For additional option information and package dimensions see Option Section. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Peak reverse voltage Parameter VR 3.0 V Continuous forward current IF 60 mA Power dissipation Derate linearly from 25C Document Number 83650 Rev. 1.2, 04-Nov-03 Test condition Pdiss Unit 100 mW 1.33 mW/C www.vishay.com 1 ILD32/ ILQ32 VISHAY Vishay Semiconductors Output Parameter Test condition Symbol Value Unit BVCEO 30 V IC 125 mA Pdiss 150 mA 2.0 mW/C Collector-emitter breakdown voltage Collector (Load) Current Power dissipation Derate linearly from 25C Coupler Parameter Symbol Value Unit VISO 5300 VRMS Creepage 7 mm Clearance 7 mm Isolation test voltage 1) Test condition Part t = 1.0 sec. 175 Comparative tracking index per DIN IEC 112/VDE303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011 ILD32 Ptot 400 mW ILQ32 Ptot 500 mW ILD32 5.33 mW/C ILQ32 6.67 mW/C C Total dissipation Derate linearly from 25 C Storage temperature Tstg - 55 to + 150 Operating temperature Top - 55 to + 100 C 10 sec. Lead soldering time at 260 C 1) between emitter and detector refer to standard climate 23 C/50 %RH; DIN 50014 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 10 mA Test condition Symbol VF Min 1.25 1.5 Unit V Reverse current VR = 3.0 V IR 0.1 100 pF Capacitance VR = 0 V CO 25 pF Output Symbol Min Breakdown voltage collectoremitter Parameter IC = 100 A, IF = 0 BVCEO 30 Breakdown voltage emittercollector IE = 100 A BCECO 5.0 Collector-emitter leakage current VCE = 10 V, IF = 0 www.vishay.com 2 Test condition ICEO Typ. Max Unit V 10 1.0 nA 100 nA Document Number 83650 Rev. 1.2, 04-Nov-03 ILD32/ ILQ32 VISHAY Vishay Semiconductors Coupler Parameter Test condition Collector emitter IC = 2.0 mA, IF = 8.0 mA Isolation capacitance Symbol Min Typ. Max VCEsat Unit 1.0 CISOL V 0.5 pF Current Transfer Ratio Parameter Test condition Current Transfer Ratio IF = 10 mA, VCE = 10 V Symbol Min CTR 500 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Test condition Typ. Max Unit Turn-on time VCC = 10 V, IF = 5.0 mA, RL = 100 ton 15 s Turn-off time VCC = 10 V, IF = 5.0 mA, RL = 100 toff 30 s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.2 1. 3 NCTRce - Normalized CTR VF - Forward Voltage - V 1.4 Ta = -55C 1.2 Ta = 25C 1.1 1.0 0.9 Ta = 85C 0.8 1.0 0.8 .1 1 10 IF - Forward Current - mA 0.4 0.2 Vce =1V 1 10 100 1000 IF - LED Current - mA 100 iild32_01 Vce = 10 V 0.6 0.0 .1 0.7 Normalized to: Vce = 10 V IF = 10 mA Ta = 25C iild32_02 Figure 1. Forward Voltage vs. Forward Current Document Number 83650 Rev. 1.2, 04-Nov-03 Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current www.vishay.com 3 ILD32/ ILQ32 VISHAY Vishay Semiconductors 10 Normalized to: Ta = 25C IF = 10 mA Vce = 10 V NIce - Normalized Ice 1 Vce = 10 V IF Vce = 1V .1 VO tD tR tPLH .01 VTH=1.5 V .001 .1 tPHL 100 10 1 IF - LED Current - mA tS tF iild32_06 iild32_03 Figure 3. Normalized Non-saturated and Saturated Collectoremitter Current vs. LED Current Figure 6. Switching Timing tpLH -Low/High Propagation Delay - s 80 TA = 25C, VCC = 10 V Vth = 1.5 V 1 k VCC=10 V 60 F=10 KHz, DF=50% 220 i 40 RL VO 470 20 I F =5 mA 100 0 0 5 10 15 20 iild32_07 IF - LED Current - mA iild32_04 Figure 4. Low to High Propagation Delay vs. Collector Load Resistance and LED Current Figure 7. Switching Schematic tpHL -High/Low Propagation Delay - s 20 1k TA = 25C VCC = 10 V Vth = 1.5 V 15 10 100 5 0 0 5 10 15 20 IF - LED Current - mA iild32_05 Figure 5. High to low Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 4 Document Number 83650 Rev. 1.2, 04-Nov-03 ILD32/ ILQ32 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) i178006 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10 3-9 .008 (.20) .012 (.30) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) i178007 Document Number 83650 Rev. 1.2, 04-Nov-03 www.vishay.com 5 ILD32/ ILQ32 VISHAY Vishay Semiconductors Option 6 Option 7 Option 9 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 6 .331 (8.4) MIN. .406 (10.3) MAX. 0040 (.102) 0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) 15 max. 18450 Document Number 83650 Rev. 1.2, 04-Nov-03 ILD32/ ILQ32 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83650 Rev. 1.2, 04-Nov-03 www.vishay.com 7