MICROSEMI CORP/ MICRO MICR UALITY SEMICONDUCTOR, iNC 723-07 SBE D MM 6115907 0001319 107 MM@L IBR 25 Amp Fast Recovery Time Integrated Rectifiers VY Series 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, Varm Ratings 150 Amps One Half Cycle Surge Current 2000V Minimum Circuit-To-Case Insulation fed DetPocstive _ Bad bet-Pactire +, f = jee TT F '/ jt e toe he fom ol Atel preset tay Hoe SURUERICATED Stud <r -38 inet Pound. TO-3 OUTLINE THREE PHASE, PRESS MOUNTING SINGLE STUD MOUNTING FLANGE FULL WAVE BRIDGE LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS A 032 Typ. 81 G 830 Max. 21,08 M -120 3,05 T 2.250 57,15 B 1.0 Max. 25,4 H 930 Max. 23,62 N .34-.40 8,64-10,16 U 4.125 28,58 Cc 187 Typ. 4,75 l -7505-.7545 19.06-19,16 P -135 Max. 3,43 v -156 Dia. 3,96 D .25 Min. 6,35 J B75 22,23 Q 1.177-1.197 29,90-30,40 | W 164 4,17 E .125 Typ. 3,18 K 1.10 Max. 27,94 A 525A Max. 13,34 x 375 9,35 F -110 Dia. 2,79 L 1.20 Max. 30,48 S$ -151-.161 Dia. 3,84-4,09 Y 50 12,70 Dimensional tolerance inches .xxt Xxxx+ % MAXIMUM RATINGS AT T, = 25C (unless otherwise specified) RATINGS SYMBOL VY 100X VY200X VY400X UNITS DC Blocking Voltage Vim Working Peak Reverse Voltage Vawm 100 200 400 Volts Peak Repetitive Reverse Voltage Vann Peak Reverse Voltage, Ye Cycle at 60Hz (non-rep) Vau (non-rep) 120 240 480 Volts RMS Reverse Voltage Vewams) 70 140 280 Volts Peak Surge Current, V2 Cycle at 60Hz (non-rep) per diode (Fig. 2) lesa 150 Amps Avg. Forward Current T. = 100C (Fig. 1) lo 25 Amps Junction Operating and Storage Temperature Range Ta, Teste 65 to + 150 G NOTE: Case temperature (T,} is measured on bottom of case within .125 inches of center. ELECTRICAL CHARACTERISTICS AT T, = 25C (unless otherwise specified) CHARACTERISTICS SYMBOL UNITS Maximum Instantaneous Forward Voltage Drop at 25 Amps per diode (Fig. 3) Vem 18 Volts Maximum Reverse Recovery Time, I = 1 Amp, = 2 Amp len = 0.5 Amp , ty 200 nsec Maximum Reverse Current at Rated Vay and \ 5 mA Tc = 150C, per diode AM Thermal Resistance, Junction to Case Rais 1 C/W Insulation Strength, Circuit to Case, Min. 2000 Volts DC 35 MICROSEMI CORP/ MICRO SLE ) @ 6115907? 0001320 929 BBMAL DC FORWARD CURRENT PEAK SURGE CURRENT (Per Diode) VS NUMBER 30 VS CASE TEMPERATURE 3 OF CYCLES AT 60 Hz (SINE WAVE INPUT) & 1000 = < a = a 25 = = VY]VYA = vv, VYC = = 20 VYD, VYH & RK 2 2 150 fr 6 vd x 16 < , 100 o 2 4 @ 106 z 3 w o 5 9 5 2 0 a 0 wo 10 = 0 20 40 60 80 100 120 140 160 o 1 10 60 100 CASE TEMPERATURE, Te, (C) NUMBER OF CYCLES AT 60 Hz FIGURE 1 FIGURE 2 T-23-07 TYPICAL INSTANTANEOUS FORWARD VOLTAGE OROP (Per Ciode) VS OC FORWARD CURRENT 1 a a z ~ RECOVERY WAVE FORM e 2 ww c > 5 a < = 51 wy 0.3 9 02 #04 O6 O8 10 12 14 16 1.8 TYPICAL INSTANTANEOUS FORWARD VOLTAGE OROP, Vem. (VOLTS) FIGURE 3 FIGURE 4 CIRCUIT 100V 200V 400V ANY OF THE CIRCUITS SHOWN BELOW ARE AVAILABLE IN THE FULL WAVE BRIDGE VY100X VY200X VY400X APTER THE "VV" IN THE PART NUMBER. SEE PART NUMBER CENTER TAP VYA100X VYA200X VYA400X SELECTION CHART. , COMMON CATHODE CENTER TAP VYB100X VYB200X VYB400X wos xl voI COMMON ANODE THREE PHASE 0s R&D aS ED COMMON CATHODE VYC100X VYC200X vYC400X } } THREE PHASE Py r+ COMMON ANODE VYD100X VYD200xX VYD400X *THREE PHASE VYH100X VYH200X VYH400X new WEG BUCK NEG BLACK FULL WAVE BRIDGE . , . dawg. of VYC and VYD (100V, 200V, 400V) in single mounting flange. See NOTE: Devices have standard flag terminals as shown (.187"-4.75mm). To order TO-3 Mount add suffix T to part no. a a t To order Single Stud Mount add suffix S to part no. A N a * } NEG GLACK FIGURE 5 36