ISP814X,ISP824X,ISP844X3,2,1 ISP814,ISP824,ISP844-3,-2,-1 LOW INPUT CURRENT A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 ISP814X3,2,1 ISP814-3,2,1 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Low input current 0.25mA IF l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Industrial systems controllers l Signal transmission between systems of different potentials and impedances 5.08 4.08 4 2 3 7.62 4.0 3.0 13 Max 0.5 3.0 0.26 3.35 ISP824-3,2,1 2.54 7.0 6.0 1.2 10.16 9.16 10.46 9.86 1.25 0.75 2 7 3 4 6 5 7.62 13 Max 0.5 0.5 0.26 3.35 1 ISP844X3,2,1 ISP844-3,2,1 3 14 4 13 5 7.0 6.0 6 7 8 12 2.54 1.2 16 15 2 11 10 9 7.62 4.0 3.0 13 Max 0.5 0.26 10.16 8 4.0 3.0 20.32 19.32 0.6 0.1 1 3.0 OPTION G 7.62 OPTION SM SURFACE MOUNT 1 1.2 ISP824X3,2,1 0.5 DESCRIPTION The ISP814-3,-2,-1, ISP824-3,-2,-1, ISP844-3,-2,-1 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. Dimensions in mm 2.54 3.0 0.5 3.35 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92449m-AAS/A4 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Power Dissipation 50mA 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 70V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) 1.2 Output Collector-emitter Breakdown (BVCEO) 1.4 TEST CONDITION V IF = 20mA V IC = 1mA V nA IE = 100A VCE = 20V 20 40 80 % % % 0.25mAIF ,0.4V VCE 0.5mA IF , 0.4V VCE 1.0mA IF , 0.4V VCE. 40 80 % % 0.5mA IF , 0.4V VCE 1.0mA IF , 0.4V VCE % V V V VRMS VPK s s 1.0mA IF , 0.4V VCE 0.25mAIF,0.05mAIC 0.5mA IF , 0.2mA IC 1.0mA IF , 0.8mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC=0.05mA,RL=100 70 ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) (Note 2) ISP814-3, ISP824-3, ISP844-3 ISP814-2, ISP824-2, ISP844-2 6 100 ISP814-1, ISP824-1, ISP844-1 80 Collector-Emitter Saturation Voltage-3 -2 -1 Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Note 2 7/12/00 0.4 0.4 0.4 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92449m-AAS/A4 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low Collector-emitter Voltage Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 0 1.0 TA = 25C 0.8 IF = 1.0mA 0.6 IF = 0.5mA 0.4 0.2 IF = 0.25mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature Forward Current vs. Ambient Temperature 1.5 50 Relative current transfer ratio Forward current I F (mA) 60 40 30 20 10 0 IF = 1mA VCE = 0.4V 1.0 0.5 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( C ) (V) 0.42 120 0.36 IF = 1mA IC = 0.8mA 0.30 Current transfer ratio CTR (%) CE(SAT) Collector-emitter saturation voltage V 100 Current Transfer Ratio vs. Forward Current Collector-emitter Saturation Voltage vs. Ambient Temperature 0.24 0.18 0.12 0.06 0 100 80 60 40 VCE = 0.4V TA = 25 C 20 0 -30 0 25 50 75 Ambient temperature TA ( C ) 7/12/00 0 25 50 75 Ambient temperature TA ( C ) 100 0.1 0.2 0.5 1 2 Forward current IF (mA) 5 DB92449m-AAS/A4