01 pdeQ@ 3a75081 0017248 7 I 3875081 G E SOLID STATE O16 17248 0 T73B3-24 Darlington Power Transistors - 2N6386, 2N6387, 2N6388 File Number 610 10-Ampere N-P-N Darlington pe Power Transistors : t *40-60-80 Volts, 65 Watts . Gain of 1000 at 5 A (2N6387, 2N6388) o peace . Gain of 1000 at 3 A (2N6386) (FLANGE O pnb Features: = - YOP iw Operates from IC without predriver TERMINAL DESIGNATIONS szca-sosen . Applications: JEDEC TO-220A8 Power switching # Audio amplifiers , = Hammer drivers Series and shunt regulators The 2N6386, 2N6387, and 2N6388 are monolithic silicon n-p-n Darlington transistors designed for low- and medium- frequency power applications. The high gain of these devices make it possible for them to be driven directly from integrated circuits. The 2N6386 is complementary to the 2N6666, the 2N6387 is complementary to the 2N6667, and the 2N6388 is complementary to the 2N6668. These devices are supplied in the JEDEC TO-220AB (VERSA- WATT) plastic package. 2205-206 g1M2 Fig.t Schematic diagram for all pes, MAXIMUM RATINGS, Absolute-Maximum Values: 2N6386 2N6387 2N6388 *VCBO 0 6 ee ee ee 40 60 80 v Vcer(sus) Rpe=1002 . . 1. ww eee 40 60 80 V Vceolsus). 6 6 ee ee 40 60 80 Vv * Voev(sus) VeE=-15V. 2 1 ee 40 60 80 v *VEBO . 6-1 ee ee es 5 5 5 Vv Pio, ee ee te 8 10 10 A ICM ce 15 18 16 . A "igo 0.25 0.25 0.25 A * Pr . To S25 2. 65 65 65 w To> 259 2 ee ee em See Fig.2 *Tstg Tye ee ee _ -65 to +150 %% * Te At distances > 1/8 in. (3.17 mm) from case for 10smax,. . . . 235 oC * In accordance with JEDEC registration data format JS-6 ROF-2. - 250 0790 A-O1 . \ Ww, aa a - - ye erent Ol Dew 3875081 0017249 4 . 3875081 GE SOLID STATE O1E 17249 Di 3329 Darlington Power Transistors 2N6386, 2N6387, 2N6388 ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS ! CHARACTERISTIC vorase CURRENT | 2nesae 2ne387 | 2Ne388 | UNITS YMB SYMBOL Vcel Vee! Ic | ig | MIN. | MAX. |MIN, | MAX, [MIN | MAX, 80 0 - _ - - - 1 . *1ICEO 60 0 ~ ~ - 1 - - 40 0 - 1 ~ - - - 80 | 1.5 - - - - - | 03 ICEV 60 | -1.5 - -~ }-~ | os] - _ mA 40 | -1.5 = 03 | - = - 80 | 1,5 - - ~ - - 3 Te = 125C 60 | -1.5 - - - 3 _ - 40 | -1.5 - 3 - - - = *'EBo 5 | 0 - 5 - 5 - mA 1 Vceolsus} 0.23] O 40 - 60 - 80 - VcER(sus) 3 - = _ RRE = 1009 0.2 40 60 80 Vv Vcev(sus) 1,5} 0,22 40 ~ 60 _ 80 > 3 3a 1000 | 20,000] - - - lh 3 5a - {1000 |20,000]1000 | 20,000 FE 3 ga woo} - | - - |- - 3 108 - - 100 - 100 - 3 3a - 28 | - - - - 3 6a - - - 28 | - 2.8 *|VBe 3 ga -l|[as/-][- |]-] - Vv 3 10a - - - 45 | - | 45 32 [0.0062] 2 - = ~ = + 64 10,018 | ~ _ - 2 _ 2 Vce(sat) ge | 0.088 _ 3 _ _ Vv 104] 0,14 | = = 3 = 3 8a _ 4 _ _ a VF 108 = - | - a | /l 4 V * hte f=1kHz 5 1 1000| - |1000} - {1000} * |h | fe f= 1MHz 5 1 20 - | 20 - | 20 - Cob Vee =10V, - { 200 | | 200 | - | 200 pF f=1 MHz 'S/b t= 1s, nonrep, 25 2.6 - 2.6 ~ 2.6 ~ A RIC - | 192 [\- | 192 | [1.92 | oc 4 Pulsed: Pulse duration = 300 us, duty factor = 1.8%. * In accordance with JEDEC registration data format JS-6 ROF-2, NOTE CURRENT CERATING AT CONSTANT rrtttdy VOLTAGE ONLY TO THE O1SSIPATION- Zo UMITED PORTION ANG THE Is7y LIMITED PORTION OF MAXIMUM OPERATING AREA eed | SSRs Tove Sua . i e = : <4 88 z . Os q y g 50 a gas gi ge 24 5 2 so E- wo 125 10 ms 0 CASE TEMPERATURE Wel te 920%-204008) Fig.2 Derating curve for aff types. Fig. 3 Typical de-beta characteristics for all types. 251 0791 A-O02 o1 de WM 3a75081 OO17eso S T 3875081 G E SOLID STATE Darlington Power Transistors oT 3a29 Ofte 17250 2N6386, 2N6387, 2N6388 CASE TEMPERATURE . t 10 100 Roo COLLECTOR- TO-EMITTER VOLTAGE (Voe)V f $2s~26901 Fig. 4 Maximum operating areas for all CURRENT (Te) 1A COLLECTOR-TO-EMITTER VOLTAGE [Vcel=3 VOLTAGE {og}#5. 3 TEMPERATURE {125C z & - = & z Z | 3 \ 3 3 3 ao al 1 0 FREQUENCY (1) Mat snce-t9019 BASE-TO-EMITTER VOLTAGE (Vge) azes-207c0n Fig. 5 Typical smail-signal gain for all types. Fig. 6 Typical input characteristics for all types. COLLECTOR-TO-EMITTER VOLTAGE (Vce)s3 i I 3 ole 5 s 2 5 = s 3 E 5 4 5 8 S 3 8 COLLECTOR-TO-EMITTER VOLTAGE [VogI- BASE -TO-EMITTER VOLTAGE {Vge}V etts-19925 $20$-20701RE Fig. 7 Typical output characteristics for all types. Fig. 8 Typical transfer characteristics for ail types, 252 0792 A-03 Ol pe ff sa7soa1 o017251 7 i nw 3875081 G E SOLID STATE oe O1E 17251 D0 T-BBZI Darlington Power Transistors a 2N6386, 2N6387, 2N6388 COLLECTOR CURRENT (I)A i 100 COLLECTOR- TO~EMITTER VOLTAGE (Vcp)V 9208-28900 Fig. 9 Maximum operating areas for all types at Tg = 100C. Ros No, S434 Input 2-200 OR EQUIVALENT) CHRONETICS PULSE T8;* GENEAATOA MODEL -~_ a i 2 No. PG=31, OR 2 lo. mote rt g EQUIVALENT 52 oevice 3 UNDER TEST g 4 = > & PULSE CURATION Ry 200 Re 20 pt POSITIVE VOLTAGE 20 ws NEGATIVE VOLTAGE REP, RATE #200 Hr h * 1g, AND Igy ARE MEASURED WITH TEKTRONIX CURRENT COLLECTOR-TO-EWITTER SATURATION voLTAGE [g Ise! }] PROBE P6019 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 9203-20484A1 925~-20699R1 Fig. 10 Typical saturation characteristics Fig. 11 Circuit used to measure saturated = for all types. switching-times. - 253 0793 A-04 | o1 DE fj aa7soa1 0047252 4 T 3875081 GE SOLID STATE nnn 796. py 173327 Darlington Power Transistors 2N6386, 2N6387, 2N6388 a | w 3 = COLLECTOR CURRENT [IelA qees-19420R QUIPUT WAVE FORM ace inaent Fig. 12 Typical saturated switching-time charac- teristics for all . . . ; : sristics for all types Fig. 13 Phase relationship between input current and output current showing reference points for specification of switching-times. 254 0794 A-05 eee