A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 70 V
ICES VCE = 60 V TC = 55 OC30
mA
BVEBO IE = 20 mA 3.5 V
hFE VCE = 6.0 V IC = 5.0 A 20 ---
VFIF = 10 mA 0.8 V
hfe VCE = 28 V IC = 1.0 A f = 50 MHz 2.0 ---
COB VCB = 30 V f = 1.0 MHz 250 pF
PIE VCC = 28 V IC = 20 mA POE = 37.5 W
f = 30 MHz POE = 75.0 W 1.88
3.75 W
GPE
η
ηη
ηC
IMD VCC = 28 V IC = 20 mA POE = 75.0 W
f = 30 MHz
13
40 -30
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
2N6093
DESCRIPTION:
The 2N6093 is a Hig h G a in Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temper at ur e Sensing Diode.
MAXI MUM RATINGS
IC10 A
VCE 35 V
PDISS 83.3 W @ T C = 75 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 1.50 OC/W
PACKAGE STYLE TO-217
¼-28 UNF Thread
1 = Emi tter & Diode Cathode
2 = Collector
3 = Base
4 = Diode Anode
