IPD70N12S3L-12
OptiMOS®-T Power-Transistor
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25°C, VGS=10V 70 A
TC=100°C, VGS=10V1) 48
Pulsed drain current1) ID,pulse TC=25°C 280
Avalanche energy, single pulse1) EAS ID=35A 410 mJ
Avalanche current, single pulse
IAS -70 A
Gate source voltage
VGS - ±20 V
Power dissipation
Ptot TC=25 °C 125 W
Operating and storage temperature
Tj, Tstg - -55 ... +175 °C
Value
VDS
120
V
RDS(on),max
11.5
mW
70
A
Product Summary
Type
Package
Marking
IPD70N12S3L-12
PG-TO252-3-11
QN12L12
PG-TO252-3-11
Rev. 1.0 page 1 2016-06-20
IPD70N12S3L-12
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics1)
Thermal resistance, junction - case
RthJC - - - 1.2 K/W
SMD version, device on PCB
RthJA minimal footprint - - 62
6 cm2 cooling area2) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0V, ID= 1mA 120 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=83µA 1.2 1.7 2.4
Zero gate voltage drain current
IDSS
VDS=120V, VGS=0V,
Tj=25°C
-0.01 0.1 µA
VDS=120V, VGS=0V,
Tj=125°C1)
- 1 10
Gate-source leakage current
IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=4.5V, ID=70A -11.7 15.2 mW
VGS=10 V, ID=70 A -9.6 11.5
Values
Rev. 1.0 page 2 2016-06-20
IPD70N12S3L-12
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics1)
Input capacitance
Ciss -4270 5550 pF
Output capacitance
Coss -950 1235
Reverse transfer capacitance
Crss -90 135
Turn-on delay time
td(on) -12 -ns
Rise time
tr- 6 -
Turn-off delay time
td(off) -35 -
Fall time
tf- 7 -
Gate Charge Characteristics1)
Gate to source charge
Qgs -15 21 nC
Gate to drain charge
Qgd -11 17
Gate charge total
Qg-59 77
Gate plateau voltage
Vplateau -3.5 - V
Reverse Diode
Diode continous forward current1) IS- - 70 A
Diode pulse current1) IS,pulse - - 280
Diode forward voltage
VSD
VGS=0V, IF=70A,
Tj=25°C
0.6 11.2 V
Reverse recovery time1) trr
VR=60V, IF=50A,
diF/dt=100A/µs
-80 -ns
Reverse recovery charge1) Qrr -185 -nC
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25°C
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=70A, RG=3.5W
VDD=96V, ID=70A,
VGS=0 to 10V
1) Defined by design. Not subject to production test.
Rev. 1.0 page 3 2016-06-20
IPD70N12S3L-12
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS = 10 V ID = f(TC); VGS = 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100 1000
ID [A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
20
40
60
80
100
120
140
050 100 150 200
Ptot [W]
TC [°C]
0
10
20
30
40
50
60
70
80
050 100 150 200
ID [A]
TC [°C]
Rev. 1.0 page 4 2016-06-20
IPD70N12S3L-12
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = f(ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 70 A; VGS = 10 V
parameter: Tj
5
10
15
20
25
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
40
80
120
0 1 2 3 4 5
ID [A]
VDS [V]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
5
15
25
35
020 40 60 80 100 120 140
RDS(on) [mΩ]
ID [A]
-55 °C
25 °C
175 °C
0
50
100
150
200
250
1 2 3 4 5
ID [A]
VGS [V]
Rev. 1.0 page 5 2016-06-20
IPD70N12S3L-12
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristics 12 Typ. avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF [A]
VSD [V]
85 µA
420 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
C [pF]
VDS [V]
101
25 °C
100 °C
150 °C
1
10
100
0.1 1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF [A]
VSD [V]
Rev. 1.0 page 6 2016-06-20
IPD70N12S3L-12
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 70 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
110
115
120
125
130
135
-55 -15 25 65 105 145
VBR(DSS) [V]
Tj [°C]
24 V 96 V
0
1
2
3
4
5
6
7
8
9
10
010 20 30 40 50 60
VGS [V]
Qgate [nC]
70 A
35 A
17.5 A
0
100
200
300
400
500
600
700
800
900
25 75 125 175
EAS [mJ]
Tj [°C]
Rev. 1.0 page 7 2016-06-20
IPD70N12S3L-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0 page 8 2016-06-20
IPD70N12S3L-12
Revision History
Version
Revision 1.0
Changes
Final Data Sheet
Date
20.06.2016
Rev. 1.0 page 9 2016-06-20