POWER MANAGEMENT
1www.semtech.com
SC1116
Linear FET Controller
For DDR Supplies
Features
Revision: March 28, 2007
Description
The SC1116 is a low cost controller for low power
linear DDR power supplies.
The SC1116 comes in a space saving SOT-23 6 pin
package.
The SC1116 provides a dual gate drive for the top serial
and bottom parallel MOSFETs with internal shoot through
protection.
The wide range of input voltages (3V to 15V) allows the
chip to work in many various applications.
The variable output voltage is programmable from the
outside with an input divider or an external reference.
Wide range of VDDQ, down to 0.5V
DDR supplies
SCSI
Line termination
Source / Sink LDOs
User can select FETs to optimize system current
rating/dropout/cost
Low VDDQ, 0.5V to 2.5V
-40°C to +85°C operating temperature
External compensation capable for low ESR loads
Minimum external components
0.6 mA Quiescent current
Guaranteed no shoot through
SOT-23 6L small package. Fully WEEE and RoHS
compliant
Typical Application Circuit
Applications
Notes:
(1) Values used for optional compensation are 1K and 4.7nF typical.
(2) When using 3V as Vcc, use of low threshold FETs is a must.
REF
3DRVL 4
VCC
1
FB 5
GND
2
DRVH 6
U1
SC 1 1 16
0.1uF
0.1uF
typ
4.7nF
typ
4.7nF
typ
47uF
R1
1k 0.5%
R2
1k 0.5% typ
1k
typ
1k
Q1
MOSFET N
Q2
MOSFET N
VDDQ=2.5Vtyp
Vcc=3 to 15V
VTT=1.25Vtyp
GND
2 2007 Semtech Corp. www.semtech.com
POWER MANAGEMENT
SC1116
Electricial Characteristics
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Absolute Maximum Rating
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Unless otherwise specified, VCC = 5V, 0.5V ≤ VDDQ ≤ 2.5V, R1 = R2 = 1kΩ +/- 0.1%.
Specifications with standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range
(TA = -40°C to +85°C).
Note:
(1) For Load Regulation testing use a low duty cycle current pulse, when measuring VTT.
3
2007 Semtech Corp. www.semtech.com
POWER MANAGEMENT
SC1116
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Pin Descriptions
Notes:
(1) Only available in tape and reel packaging. A reel
contains 3000 devices.
(2) Lead free option. Fully WEEE and RoHS compliant.
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Ordering InformationPin Configuration
3
1VCC
TOP VIEW
(SOT-23 6L)
5 FB
REF
6DRVH
4DRVL
2GND
Block Diagram
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SC1116
Application Information
Overview
The SC1116 linear controller is designed to meet the
JEDEC specifications for termination of DDR-SDRAM.
Double Data Rate (DDR) memory is clocked at the same
speed as older SDRAM (synchronous dynamic random
access memory), yet handles twice the amount of data
by using the rising and falling edge of the clock signal for
data transfers. Another difference is that DDR memory
requires 2.5V instead of 3.3V used by standard SDRAM.
The other feature that separates DDR memory from a
conventional type is employment of the VTT – termination
voltage. Main requirements for the VTT are that it must
track variations of VDDQ and be able to supply (source)
current, and absorb (sink) current.
The SC1116 controller offers a low cost solution for DDR
termination voltage regulation by using external pass el-
ements (MOSFETs). Having the flexibility of choosing the
MOSFETs allows for optimization on the basis of cost/
size/performance of the specific application.
Test Circuit & Waveforms
The test circuit is shown below in Figure 1.
Note that VREF voltage is supplied externally to eliminate
inaccuracy caused by resistor divider.
Figure 1.
REF
3DRVL 4
VCC
1
FB 5
GND
2
DRVH 6
U1
SC1116
C3
0.1uF
C2
1uF
C4
4.7nF
C5
4.7nF
C6
270uF
R3
1k
R4
1k
Q1
IR3714
Q2
IR3714
VTT=1.25Vtyp
C1
100uF
22m
32m
2xIsink
Isink
Po wer
Electronic
Current
Supp ly
Load
Pulse loa d, dc=50%
Iso u rc e/ Isink
Pro be
VDDQ=2.5V
Vcc=5V
Vref=1.25V
+/-3A
0A to 6A Step
3A Isource
5
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SC1116
Typical Characteristics
Regulation Vtt vs. Vref @ Is/s=1A; Vcc=5V
-5.0%
-4.0%
-3.0%
-2.0%
-1.0%
0.0%
1.0%
2.0%
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Vref (Vddq/2), V
dVtt / Vtt
Regulation Vtt vs. Vref @ Is/s=5A; Vcc=5V
-5.0%
-4.0%
-3.0%
-2.0%
-1.0%
0.0%
1.0%
2.0%
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Vref (Vddq/2), V
dVtt / Vtt
Regulation Vtt vs. Vref @ Is/s=1A; Vcc=12V
-5.0%
-4.0%
-3.0%
-2.0%
-1.0%
0.0%
1.0%
2.0%
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Vref (Vddq/2), V
dVtt / Vtt
Regulation Vtt vs. Vref @ Is/s=5A; Vcc=12V
-5.0%
-4.0%
-3.0%
-2.0%
-1.0%
0.0%
1.0%
2.0%
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Vref (Vddq/2), V
dVtt / Vtt
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SC1116
Typical Characteristics (Cont.)
Max. Sinking Current
vs. VCC
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
33.544.555.566.5
SUPPLY VOLTAGE, VCC (V)
OUTPUT CURRENT ( A )
VDDQ = 2.5V
VREF = 1.25V
VTT = 1.263V
Max. Sourcing Current
vs. VCC
0
1
2
3
4
5
6
3 3.5 4 4.5 5 5.5 6 6.5
SUPPLY VOLTAGE, VCC (V)
OUTPUT CURRENT ( A )
VDDQ = 2.5V
VREF = 1.25V
VTT = 1.237V
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SC1116
Typical Characteristics (Cont.)
Quiescent Current
vs. VCC
0
100
200
300
400
500
600
700
800
3 3.5 4 4.5 5 5.5 6 6.5
SUPPLY VOLTAGE, VCC(V)
QUIESCENT CURRENT (uA )
VDDQ = 2.5V
VREF = 1.25V
VTT = 1.25V
ILOAD = 0A
25 oC
0 oC
125 oC
Quiescent Current
vs. Temperature
450
460
470
480
490
500
510
520
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERA TURE °C
QUIESCENT CURRENT (uA
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
VTT = 1.25V
ILOAD = 0A
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SC1116
VTT
100mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (50us/div)
I STEP :
+1.25A
to –1.25A
Slew Rate:
2.5 A/uS
VTT
100mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (50us/div)
I STEP :
- 0.75A
to + 0.75A
Slew Rate:
2.5 A/uS
Test Waveforms
VTT
100mV/div
Time (50us/div)
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
I STEP :
+2.3A
to - 2.2A
Slew Rate:
2.5 A/uS
VTT
100mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (50us/div)
I STEP :
+1.75A
to –1.75A
Slew Rate:
2.5 A/uS
VTT Transient Response
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POWER MANAGEMENT
SC1116
Test Waveforms (Cont.)
VTT
100mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (50us/div)
I STEP :
- 0.53A
to + 0.53A
Slew Rate:
2.5 A/uS
VTT
100mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
COUT = 47uF
ceramic
Time (50us/div)
I STEP :
- 0.5A
to + 0.53A
Slew Rate:
2.5 A/uS
VTT Transient Response
VTT
20mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (20us/div)
I STEP :
+ 0.03A
to + 2.25A
Slew Rate:
2.5 A/uS
VTT
50mV/div
ISOURCE / ISINK
VCC = 5V
VDDQ = 2.5V
VREF = 1.25V
Time (20us/div)
I STEP :
+ 0.03A
to - 2.25A
Slew Rate:
2.5 A/uS
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SC1116
Evaluation Board
Top View Top Layer
Evaluation Board Schematic
Notes:
(1) Values used for optional compensation are 1K and 4.7nF typical.
(2) When using 3V as Vcc, use of low threshold FETs is a must.
REF
3DRVL 4
VCC
1
FB 5
GND
2
DRVH 6
U1
SC1116
C3
0.1
C2
0.1
C4
4.7nF C5
4.7nF
C6
47uF
R1
1k 0.5%
R2
1k 0.5% R3
1k R4
1k
Q1
IR3714
Q2
IR3714
C1
22uF
VTT=1.25Vtyp
Vcc=3 to 15V
VDDQ=2.5Vtyp
GND
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SC1116
Semtech Corporation
Power Management Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
Outline Drawing - SOT-23-6
Contact Information
Minimum Land Pattern - SOT-23-6
.110 BSC
.037 BSC
DETAIL
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SEATING
ccc C
2X N/2 TIPS
2X E/2
6
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A1
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A2
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6
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0.20
1.60
3.10
2.80 BSC
0.95 BSC
.069 1.50
2.90
.020 0.25
1.75
0.50
-
EI
L
(L1)
c
01
0.25
PLANE
GAGE
H
2.80.110
bbb C A-B D
0°
.008
-
.004
.012
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(.024)
.018
-
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0.20
10° 0° -10°
1.15
(0.60)
0.45.024
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0.30
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.90
0.90
0.22
0.60
-
0.15
1.45
1.30
-
-
1.90 BSC.075 BSC
A
e1 D
e
B
C
PLANE
D
DATUMS AND TO BE DETERMINED AT DATUM PLANE
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
3.
OR GATE BURRS.
NOTES:
1.
2. -A- -B- -H-
SIDE VIEW
NOM
INCHES
DIMENSIONS
L1
aaa
bbb
ccc
01
N
DIM
c
e
e1
L
E1
E
D
A1
A2
b
A
MIN
MILLIMETERS
MAX MIN NOM MAX
DIMENSIONS
INCHES
Y
Z
DIM
G
P
X
C
MILLIMETERS
P
(C) Z
Y
G
.043
.141
.055
(.098)
.037
.024
1.40
(2.50)
0.95
0.60
1.10
3.60
XDIMENSIONS
INCHES
Y
Z
DIM
G
P
X
C
MILLIMETERS
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
NOTES:
1.
