MOTOROLA SC {XSTRS/R FY Sb DEP esb7es4 g082498 3D 6367254 MOTOROLA SC CXSTRS/R F) 96D 82498 B 1 | MPQ2906, 2907 For Specifications, See MHQ2906 Data. ] ~ 43 -a S MAXIMUM RATINGS MPQ3303 i Rating Symbol Value - Unit : Collector-Emitter Voltage VCEO 12 Vdc . : Collector-Base Voltage Ves 25 Vde CASE 646-06, STYLE 1 CBO - . Emitter-Base Voltage : VeBo 4.0 Vdo TO-116 : Collector Current Continuous Ic 1.0 Ade F - : Four . Each Transistors | - : Transistor |Equal Power - Total Device Dissipation Pp 4 @ Ta = 25C 650 1250 mW Derate above 25C 6.2 10 mWwrc t : Total Device Dissipation Pp QUAD j @ Tc = 25C 4.0 3.0 Watts a SWITCHING TRA Derate above 25C 8.0 24 mWPC NSISTOR \ Operating and Storage Junction Ty. Tstg -55 to +150 c NPN SILICON Temperature Range THERMAL CHARACTERISTICS Junction to | Junction to : Characteristic Case *Ambi Unit Thermal Resistance Each Die 125 193* C Effective, 4 Die 41.6 100* CW Coupling Factors 1-04 or 02-03 30 60 % 01-Q2 or Q3-04 2.0 26 % (1) Resa is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | - Characteristic Symbol Min Typ Max | Unit OFF CHARACTERISTICS - Collector-Emitter Breakdown Voltage ViBRICEO 12 _ _ Vde {lg = 10 mAde, Ig = 0} Collector-Base Breakdown Voltage . VIBRICBO 25 - _ Vde (I = 100 pAdc, Ip = 0) Emitter-Base Breakdown Voltage V(BRIEBO 4.0 - Vde {lg = 100 pAde, Ic = 0) ; Collector Cutoff Current Ices _ _ 100 pAdc (Vcg = 15 Vde, Vag = 0) ON CHARACTERISTICS DC Current Gain hre _ (ig = 100 mAdo, Vcg = 0.5 Vdc} 30 45 - (I = 300 mAde, VcE = 0.5 Vdc} ; 40 55 200 Collector-Emitter Saturation Voltage VcEisat) Vde (I = 300 mAde, Ig = 30 mAdc} _ 0.22 0.33 (ig = 1.0 Ade, Ig = 0.1 Ade} ; 0.52 07 Base-Emitter Saturation Voltage VBElsat) Vde (i = 300 mAde, Ig = 30 mAdc) _ 0.87 1 {le = 1.0 Ade, Ig = 0.1 Adc} = 1.04 1 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product ff 400 500 - MHz (tg = 100 mAdc, Veg = 5.0 Vde, f = 100 MHz} Output Capacitance Cobo _ 5.0 10 pF (Vcp = 5.0 Vde, ig = 0, f = 1 MHz) (nput Capacitance Cibo _ 22 30 oF (Vge = 0.5 Vdc, Ic = 0, f = 1 MHz} SWITCHING CHARACTERISTICS Turn-On Time ton _ 12 15 ns (Vcc = 12 Vde, I = 1,0 Ade, VBE(off) = 4.0 Vde, Igy = 100 mAdc) Turn-Off Time toff _ 18 26 ns (Vee = 12 Vde, Ic = 1.0 Ade, Ip1 = 1p2 = 100 mAdc) f i - MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-124MOTOROLA SC {XSTRS/R FF 4b pe Buau7esy OOdesha y i 6367254 MOTOROLA SC CXSTRS/R F) 96D 82543 D : | | | T-35-a5s ! 2N3993,A 2N3994 CASE 20-03, STYLE 5 TO-72 (TO-206AF) 3 Drain 2 4 Case MAXIMUM RATINGS 2) Rating Symbol Value Unit 3 aly Drain-Source Voltage Vos 25 Vde 1 Source Drain-Gate Voltage VpG 25 Vde Reverse Gate-Source Voltage VGSR 25 Vde JFET Forward Gate Current IGF 10 mAdc SWITCHING Total Device Dissipation @ Ta = 25C Pp 300 mw Derate above 25C 2.0 mWwPrC P-CHANNEL DEPLETION Storage Temperature Range Tstg 65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) i Characteristic Symbol | Min Max | OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBRIGss 25 - Vde (Ig = 1.0 pAde, Vpg = 0) Drain Reverse Currant 'ipbco pg = ~15 Vde, Ig = 0) - 1.2 nAdc VWpa = 15 Vde, Ig = 0, TA = 150C) = 1.2 Ade Drain Cutoff Current 'Dtoff) (Vps = 10 Vde, Vag = 10 Vde) 2N3993, 2N3993A _ 1.2 nAde {Vpsg = 10 Vde, Vag = 6.0 Vdc) 2N3994 1.2 (Vpsg = 10 Vde, Vag = 10 Vdc, Ta = 150) 2N3993, 2N3993A 1.0 pAdc (Vpg = 10 Vde, Veg = 6.0 Vde, Ta = 180) 2N3994 = 1.0 Gate Source Voltage Ves Vde (Vpg = 10 Vde, Ip = 1.0 pAde) 2N3993, 2N3993A 4.0 9.5 2N3994 1.0 5.5 . ON CHARACTERISTICS } Zero-Gate-Voltage Drain Current(1) Ipss mAdc i (Vps = 10 Vde, Veg = 0) 2N3993, 2N3993A 10 _ 2N3994 2.0 _ SMALL-SIGNAL CHARACTERISTICS Drain-Source ON Resistance 'ds(on} Ohms Was = 0. Ip = 0, f = 1.0 kHz) 2N3993, 2N3993A _- 150 2N3994 _- 300 Forward Transfer Admittance(1)} \vst mmhos {Vps = 10 Vdc, Vas = , f = 1.0 kHz) 2N3993 6.0 12 2N3993A 7.0 12 2N3994 40 10 input Capacitance Ciss pF (Vpg = 10 Vdc, Veg = 0, f = 1.0 MHz} 2N3993, 2N3994 _ 16 2N3993A4 _ 12 Reverse Transfer Capacitance Crss pF (Vos = 0, Vag = 10 Vdc, f = 1.0 MHz) 2N3993 45 2N3993A - - 3.0 {Vps = 0, Vag = 6.0 Vde, f = 1.0 MHz) 2na994 _ 5.0 {1) Pulse Test: Pulse Width = 100 ms, Duty Cycle = 10%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-15 be teeMOTOROLA SC fXSTRS/R FF 4G pe usu7254 o04eb03 7g 6367254 MOTOROLA SC (XSTRS/R F) 96D 82603 D T-SBT7- as 3N157 3N158 CASE 20-03, STYLE 2 TO-72 (TO-206AF) j 1, Drain i MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage* Vps +35 Vde Drain-Gate Voltage* VpG +50 Vde Gate-Source Voltage* V6s +50 Vde 3 a 1 . Drain Current* Ip 30 mAdc Total Device Dissipation @ Ta = 25C Pp 300 mw Derate above 25C* 1.7 mWwrc MOSFET Junction Temperature Range* Ty -65 to +175 C AMPLIFIER AND SWITCHING Storage Channel Temperature Range* Tstg ~65to +175 C P-CHANNEL ENHANCEMENT *JEDEC Ragistered Limits ELECTRICAL CHARACTERISTICS (Ta = 26C unless otherwise noted.) [ Characteristic | Symbol Min Typ Max | unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Ip = 10 wAdc, VG = Vg = 01 ViBR)DSX -35 _ Vde Zero-Gate-Valtage Drain Current (Vpg = 15 Vde, Ves = 0) Ipss _ _- ~1.0 nAdc (Vpg = 35 Vde, Vag = 0) _ -10 pAdc Gate Reverse Current* (Vgg = +25 Vde, Vpg = 0) loss _ - +10 pAdc (Vgs = +50 Vdc, Vps = 0} _- _ +10 nAde Input Resistance (VGg = ~25 Vdc) Res 1x 10+12 - Ohms Gate Source Voltage* Ves Vde (Vps = 15 Vde, Ip = 0.5 mAdc) 3N157 ~15 - -5.5 3N158 -3.0 _ -7.0 Gate Forward Current (Vgg = 25 Vde, Vps = 0) let) - _ -10 pAdec (Vgs = 50 Vde, Vpg = 0) - _ -1.0 nAdc (Vag = 25 Vdc, Vps = 0, Ta = +55C} _ _ 10 nAde (Veg = 50 Vdc, Vps = 0. Ta = +55C) = _ -1.0 pAdc ON CHARACTERISTICS { Gate Threshold Voltage* Va@sith) Vde (Vpg = 15 Vde, Ip = 10 #Ade) 4N157 -15 - 3.2 3N168 -3.0 _ 5.0 On-State Orain Current* ID(on) -5.0 _ - mAdc (ps = 15 Vde, Vag = 10 Vdc} SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance* lvtsl 1000 - 4000 pmhos (Vpg = ~15 Vde, Ip = 2.0 mAdc, f = 1.0 kHz) Output Admittance* lYos! _ - 60 pmhos (Vps = 15 Vde, Ip = 2.0 mAdc, f= 1.0 kHz) * Input Capacitance* Ciss _ 6.0 pF (Vpg = 15 Vde, Veg = 0, f = 140 kHz) Reverse Transfer Capacitance* Cres - _ 1.3 pF (Vps = ~-15 Vdc, Veg = 0, f = 140 kHz) Drain-Substrate Capacitance Ca(sub) - - 4.0 pF (VpisuB) = 10 Vde, f = 140 kHz) Noise Voltage en NV/VHz (Rg = 0, BW = 1.0 Hz, - Vps = 15 Vde, Ip = 2.0 mAdce, f = 100 Hz) - 300 _- (Rg = 0, BW = 1.0 Hz, Vps = 15 Vde, Ip = 2.0 mAde, f = 1.0 kHz) _ 120 500 *JEDEC Registered Limits MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-75MOTOROLA SC IXSTRS/R FF Ib DE aae7254 OO06eboO4 4 7 6367254 MOTOROLA SC CXSTRS/R F) 96D 82604 OD 3N157, 3N158 T-37-as FIGURE 1 FORWARD TRANSCONDUCTANCE FIGURE 2 OUTPUT TRANSCONDUCTANCE Vos= Ta*259G 1 LO kHz ,000 Vps=-18 Ta= f= 1.0 kHz {og| - SUTPUT CONDUCTANCE {umhos) lvfs|- FORWARD TRANSFER ADMITTANCE (umhcs) On 0.5 10 6.0 10 of 05 10 5.0 10 Ip, DRAIN CURRENT {mA} Ip, DRAIN CURRENT (mA) i { FIGURE 3 FORWARD TRANSCONDUCTANCE FIGURE 4 BIAS CURVE versus TEMPERATURE Gi Designers Tas - Typical Tas 50 = E af e 22 5 Ta= 125C #5 zg 2 5 3 65 -15 8 65 105 (125148 0 40-60 -80 -10 2~~44 Ta, AMBIENT TEMPERATURE (C) Vos, GATE-SOURCE VOLTAGE {VOLTS} ! FIGURE 5 "ON" DRAIN-SOURCE VOLTAGE FIGURE 6 EQUIVALENT INPUT NOISE VOLTAGE mA Vos, DRAIN-SGURCE VOLTAGE (VOLTS) mA mA ay. EQUIVALENT INPUT NOISE VOLTAGE (uV/ /Fiz) Vas, GATE-SOURCE VOLTAGE (VOLTS) f, FREQUENCY (Hz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-76MOTOROLA SC {IXSTRS/R FF wt Od Sagas taeane er 6367254 MOTOROLA SC (XSTRS/R F) 3N157, 3N158 Tb DE Buauzes4 o042b05 OG i 86D 82605 D T-37-as SWITCHING CHARACTERISTICS (Ta = 25C) FIGURE 7 TURN-ON DELAY TIME hg= = Vag =-15V = -10 V and -15 V@ Vos =V6s=-10V td], TURN-ON DELAY TIME (ns} 05 -1.0 -20 5.0 -10 Ip, RAIN CURRENT (mA) FIGURE 9 TURN-OFF DELAY TIME he=0 Vos= =-15V d2, TURN-OFF DELAY TIME (ns) Vos=Vo=-10 0.5 1.0 -2.0 50 10 Ip, ORAIN CURRENT (mA) FIGURE 11 SWITCHING CIRCUIT and WAVEFORMS Von 8.2k SET Vpg=10V 10k IN ow | 45k 50 Vv OUTPUT TO SAMPLING OSCILLOSCOPE Vin tea fs 2.0 ns 0% PAV = 10 ps DUTY CYCLE = 2.0% -10V 0 tq2 be 10% tat Vos WY sek aE FIGURE 12 SWITCHING CIRCUIT with MOSFET EQUIVALENT MODEL Vob FIGURE 8 RISE TIME fig=0 Re = Rb Vos=Ves=-15V vps = Vas=-10 ty, RISE TIME (ns) tp, ORAIN CURRENT (mA) FIGURE 10 FALL TIME fg= fg = Ro #Vgg 2-15 tt, FALL TIME (ns} =VGg=-10 0.5 1.0 2.0 -6.0 10 tp. ORAIN CURRENT (mAJ The switching characteristics shown above were measured in a test circuit similar to Figure 11. At the beginning of the switching interval, the gate voltage is at ground and the gate source capacitance (Cgs * Crgg * Crss) has no charge. The drain voltage is at Vpp and thus the feedback capacitance (Crs) is charged to Vpp. Similarly, the drain substrate capacitance (Ca{sub)) is charged to Vpp since the substrate and source are connected to ground. During the turn-on interval Cgg is charged to Vgs (the input voltage) through Rg (generator impedance} (Figure 12]. Crss must be discharged to Vgg * Vp(on) through Re and the par- allel combination of the load resistor (RED) and the channel resistance (rgg). In addition, Cgigub) is discharged to a low value (Vp(on}) through Rp in parallel with rqs. During turn-off this charge flow is reversed. Predicting turn-on time proves to be somewhat difficult since the channel resistance (rgs) is a function of the gate source voltage (Vgg). As Cgg becomes charged Vgs is approaching Vin and rgg decreases (see Figure 5) and since Crsg and Cg(sub} are charged through rg, turn-on time is quite non-linear. If the charging time of Cgg is short compared to that of Crss and Ca(gub). then rag (which is in parallel with Rp) will be low compared to Rp during the switching interval and will largely determine the turn-on time. On the other hand, during turn- off rgg will be almost an open circuit requiring Cpgg and Ca(sub} to be charged through Rp and resulting in a turn-off time that is long compared to the turn-on time. This is especially no- ticeable for the curves where Rg +0 and Cgs is charged through the pulse generator impedance only. The switching curves shown with Rg Rp simulate the switching behavior of cascaded stages where the driving source impedance is normally the same as the load impedance. The set of curves with Rg +0 simulates a low source impedance drive such as might occur in complementary logic circuits. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-77