2N/PN2905 are PNP silicon planar epitaxial transistors. It is intended for stage of power amplifiers and applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ Ta=25C driver switching VCBO VCEO VEBO Ic Ptot 2N/PN2905 Operating Junction & Storage Temperature Tj,Tstg ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) PNP SILICON TRANSISTORS PN2905 TO-92A EBC 2N2905 PN2905 60V 60V 40V 40V 5V 5V 600mA 600mA 600mW 500mW -65 to +200C +55 to +150C oeebee BE PARAME TER SYMBOL MIN '". MAX UNIT | TEST CONDITIONS Collector~Base Breakdown Voltage BVcRO -60 - Vv Ig=-10uA 1,70 Collector-Emitter Breakdown Voltage LVcro -40 V | I,=710mA = Ip=0 +t Emitter-Base Breakdown Voltage BVEBO -5 Vv I,=710uA Tq=0 I Collector Cutoff Current Topo ~20 nA Vap=750V 1,,=0 Collector Cutoff Current Topo -20 uA - Voge 50V 1,70 T,=150 Cc Collector Cutdff Current Iopy -50 nA Vop="30V Vpp= 0.5V Base Current Ip 50 nA VoE=730V Var'= 0-5V D.C, Current Gain hye 35 Vop=710V Ip=-100uA D.C. Current Gain hyp 50 Vop= lov I,=-1mA D.C, Current Gain hre 75 Vop=7l0v Ig=-10mA A D.C, Current Gain hyp 100 300 Vog=7l0v Ip=-150mA D.C. Current Gain hep "30 Vopz=7 lov In=-500mA Collector-~Emitter Saturation Voltage Vck (sat) ~0.4 Vv Iq=-150mA Ip=-15mA Collector-Emitter Saturation Voltage VcE (sat) -1.6 Vv Ig=-500mA Tp=-SOmA Base~Emitter Saturation Voltage VBE (sat) 1.3 Vv Ig=-150mA Tp=-15mA Base-Emitter Saturation Voltage Ver (sat) ~2.6 Vv Ig=-500mA Tp=-50mA Output Capacitance Cob 8 pF Vop=7l0V Ip=0 Input Capacitance Cib 30 pF Vep=72V I,=0 : High Frequency Current Gain hte 2 VcR="20V Iq=-50mA =100MHz MICRO ELECTRONICS LID. 32#tA BRA 5) 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro Hx. P.O. Box9477, Kwun Tong. Tel: 3-43018146, 3-893363--3-892423--3-89622+ FAX: 3410321 wee ene ht tne etme si ranean at a. Ee 4 4 & wo mo oS ot oa 0 to in Irn lt 9 eit a Olea ar eS Bl F Ble ~ F algo Es Oo =e OF ao 0 Aad [Te ;t ww tot Ce: ~~ SAIS HH a ney o - + n Hilo ovo UU YiR|oeoe ve on a ann wn alslaageagean = ba v G I PTT 1IO On OOO 1 sit wees [ ot I n 1 un v 4 ci rf z 3 = vw Fe ol {5 = 3 = oO fe) nN l ll a ||: x = s SH mn THO NnHO Oli A|P wr PP PH ei & mn = mm fa < 5 ve EE Sa om} 7) Ac & <//mige vooeHe wv Olin & Ex Bile Je Ae od + Hl|B).& BES QiNs|svekag : ae lc 2 883 < . Pps a BHAA mM Aw & & ~