Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Air conditioner, Small to medium size inverters, CVCF
QM20TD-H
•ICCollector current .......................... 20A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain...............................75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
P
EuP
BuP
BuN
EuN
BvP
EvP
BvN
EvN
BwP
EwP
BwN
EwN
N
uvw
(30.5) 715 715 7 (23.5)
11 25.5 25.5
2
76
93
106
18
28
45
φ5.5
Tab#110, t=0.5(Fig. 1) Tab#250, t=0.8(Fig. 2)
(22.45)
7
13
48.0
6.35 φ1.65
2.8
φ1.2
8.6
5.5
1.5
1.5
9.5
3.4
LABEL
Fig. 1 Fig. 2
Note: All Transistor Units are Darlingtons.
Feb.1999
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
600
600
600
7
20
20
100
1
200
–40~+150
–40~+125
2000
1.47~1.96
15~20
90
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=20A, IB=0.28A
–IC=20A (diode forward voltage)
IC=20A, VCE=2V/5V
VCC=300V, IC=20A, IB1=–IB2=0.4A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
150
2.0
2.5
1.5
—
1.5
12
2.0
1.2
2.2
0.35
Feb.1999
–1
10
0
10
7
5
4
3
2
–2
10
7
5
4
3
2
1.0 1.4 1.8 2.2 2.6 3.0
V
CE
=2.0V
T
j
=25°C
50
40
30
20
10
001 23 45
45
35
25
15
5
T
j
=25°C
I
B
=0.4A
I
B
=0.2A
I
B
=0.1A
I
B
=0.04A
I
B
=1A
1
10
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0
10
23457
1
10
23457
2
10
V
CE
=2.0V
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
23457
1
10
23457
2
10
T
j
=25°C
T
j
=125°C
V
BE(sat)
V
CE(sat)
I
B
=0.28A
–1
10 32
–2
10 75432
0
1
2
3
4
5
75 54
T
j
=25°C
T
j
=125°C
I
C
=20A
I
C
=7A
I
C
=15A
1
10
7
5
4
3
2
0
10
7
5
4
3
0
10
23457
1
10
23457
2
10
2
3
T
j
=25°C
T
j
=125°C
I
B1
=–I
B2
=0.4A
V
CC
=300V
t
s
t
f
t
on
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
–3
10
–2
10
–1
10
0
10
1
10
0
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3
3457
0
10
23
2
–1
10
2
3
3457
t
s
T
j
=25°C
T
j
=125°C
t
f
I
C
=20A
V
CC
=300V
I
B1
=0.4A
50
00 800
600200
30
40
20
10
400
35
45
25
15
5
700500100 300
T
j
=125°C
I
B2
=–0.5A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
200µs
5ms
DC
100µs
50µs
10ms
1ms
T
C
=25°C
753275327532
1.0
0
7532
0.2
0.4
0.6
1.2
1.4
1.6 4
0.8
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0 2.4
T
j
=25°C
T
j
=125°C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
1
10
–3
10
–2
10
–1
10
0
10
–1
10
0
10
1
10
2
10
–1
10
–1
10
2
10
1
10
0
10
2
10
1
10
0
10
2
10
1
10 75432
0
10 75432
0
40
80
120
160
200
20
60
100
140
180
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=0.4A
I
rr
Q
rr
t
rr
753275327532
2.0
0
327532445
7
3.2
0.8
0.4
1.2
1.6
2.4
2.8
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
