© Semiconductor Components Industries, LLC, 2012
June, 2017 − Rev. 1
1Publication Order Number:
DTC144WD/D
MUN5237DW1,
NSBC144WDXV6,
NSBC144WDP6
Dual NPN Bias Resistor
Transistors
R1 = 47 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating Symbol Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping†
MUN5237DW1T1G,
SMUN5237DW1T1G
SOT−363 3,000/Tape & Reel
NSBC144WDXV6T1G SOT−563 4,000/Tape & Reel
NSBC144WDP6T5G SOT−963 8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
MARKING DIAGRAMS
PIN CONNECTIONS
7P/V = Specific Device Code
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SOT−363
CASE 419B−02
SOT−563
CASE 463A
Q1
Q2
(1)(2)(3)
(6)(5)(4)
R1
R2
R2
R1
SOT−963
CASE 527AD
V M
1
7P MG
G
1
6
7P MG
1
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5237DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 670
490
°C/W
MUN5237DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
RqJA 493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL 188
208
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NSBC144WDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA 350
°C/W
NSBC144WDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA 250
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NSBC144WDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 540
464
°C/W
NSBC144WDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD339
408
2.7
3.3
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 369
306
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 ×1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
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3
ELECTRICAL CHARACTERISTICS (TA=25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB =50V, I
E=0)
ICBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(VCE =50V, I
B=0)
ICEO
− − 500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC=0)
IEBO
− − 0.13
mAdc
Collector-Base Breakdown Voltage
(IC=10mA, IE=0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 6)
(IC= 2.0 mA, IB=0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC= 5.0 mA, VCE =10V)
hFE 80 140 −
Collector-Emitter Saturation Voltage (Note 6)
(IC= 10 mA, IB= 5.0 mA)
VCE(sat)
− − 0.25
V
Input Voltage (Off)
(VCE = 5.0 V, IC= 100 mA)
Vi(off)
−1.7 −
Vdc
Input Voltage (On)
(VCE = 0.2 V, IC= 3.0 mA)
Vi(on)
−2.6 −
Vdc
Output Voltage (On)
(VCC = 5.0 V, VB= 4.0 V, RL= 1.0 kW)
VOL
− − 0.2
Vdc
Output Voltage (Off)
(VCC = 5.0 V, VB= 0.25 V, RL= 1.0 kW)
VOH 4.9 − −
Vdc
Input Resistor R1 32.9 47 61.1 kW
Resistor Ratio R1/R21.7 2.1 2.6
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 ×1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
350
400
(3)
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
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4
TYPICAL CHARACTERISTICS
MUN5237DW1, NSBC144WDXV6
1000
100
10
1
Figure 2. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
Vin, INPUT VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
IC/IB = 10
−55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
−55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
−55°C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
010 20304050
100
10
1
0.1
150°C
−55°C
04 81216202428
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
www.onsemi.com
5
TYPICAL CHARACTERISTICS
NSBC144WDP6
1000
100
10
1
Figure 7. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.01
Vin, INPUT VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
IC/IB = 10
−55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
−55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
−55°C
2.4
010 20304050
100
10
1
0.1
150°C
−55°C
04 81216202428
2
1.6
1.2
0.8
0.4
0
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
www.onsemi.com
6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
www.onsemi.com
7
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A
ISSUE G
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
MUN5237DW1, NSBC144WDXV6, NSBC144WDP6
www.onsemi.com
8
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.10 0.15 0.20
C0.07 0.12 0.17
D0.95 1.00 1.05
E0.75 0.80 0.85
e0.35 BSC
0.95 1.00 1.05
HE
E
D
C
A
HE
123
456
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
X
Y
TOP VIEW
SIDE VIEW
e
b
X0.08
6X
Y
BOTTOM VIEW
6X
0.35
PITCH
1.20
0.20
DIMENSIONS: MILLIMETERS
RECOMMENDED
PACKAGE
OUTLINE
MOUNTING FOOTPRINT*
L0.19 REF
L2 0.05 0.10 0.15
L
6X
L2
6X
6X
0.35
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC144WD/D
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